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DTA114ES3 [CYSTEKEC]

PNP Digital Transistors (Built-in Resistors); PNP数字晶体管（内置电阻）
DTA114ES3
型号： DTA114ES3
厂家： CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述：

PNP Digital Transistors (Built-in Resistors)
PNP数字晶体管（内置电阻）

晶体 数字晶体管
文件： 总4页 (文件大小：165K)
中文：  中文翻译
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Spec. No. : C252S3  
Issued Date : 2003.06.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/4  
PNP Digital Transistors (Built-in Resistors)  
DTA114ES3  
Features  
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input  
resistors (see equivalent circuit).  
• The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the  
input. They also have the advantage of almost completely eliminating parasitic effects.  
• Only the on/off conditions need to be set for operation, making device design easy.  
• Complements the DTC114ES3  
Equivalent Circuit  
Outline  
SOT-323  
DTA114ES3  
R1=10kΩ , R2=10 kΩ  
IN(B) : Base  
OUT(C) : Collector  
GND(E) : Emitter  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Supply Voltage  
Input Voltage  
VCC  
VIN  
IO  
-50  
-40~+10  
-50  
V
V
mA  
mA  
mW  
°C/W  
°C  
Output Current  
IO(max)  
Pd  
-100  
Power Dissipation  
200  
Thermal Resistance, Junction to Ambient  
Junction Temperature  
RθJA  
Tj  
Tstg  
625  
150  
Storage Temperature  
-55~+150  
°C  
DTA114ES3  
CYStek Product Specification  
Spec. No. : C252S3  
Issued Date : 2003.06.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/4  
Electrical Characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Test Conditions  
VI(off)  
VI(on)  
VO(on)  
II  
-
-3  
-
-
-0.5  
V
V
V
VCC=-5V, IO=-100µA  
VO=-0.3V, IO=-10mA  
IO/II=-10mA/-0.5mA  
Input Voltage  
-
-
Output Voltage  
Input Current  
Output Current  
DC Current Gain  
Input Resistance  
Resistance Ratio  
Transition Frequency  
-
-0.3  
-
-
-0.88 mA VI=-5V  
IO(off)  
GI  
-
-
-0.5  
-
13  
1.2  
-
µA  
-
kΩ  
-
VCC=-50V, VI=0V  
30  
7
-
VO=-5V, IO=-5mA  
R1  
R2/R1  
fT  
10  
1
-
-
0.8  
-
250  
MHz VCE=-10V, IC=-5mA, f=100MHz *  
* Transition frequency of the device  
Characteristic Curves  
Current Gain vs Output Current  
Output Voltage vs Output Current  
Io / Ii = 20  
10  
1
1000  
100  
10  
Vo = 5V  
0.1  
0.01  
1
10  
Output Current---I (mA)  
100  
0.1  
1
10  
100  
Output Current---I (mA)  
O
O
Output Current vs Input Voltage(OFF characteristics)  
Input Voltage vs Output Current(ON characteristics)  
Vo = 0.3V  
10  
100  
10  
1
V
CC  
= 5 V  
1
0.1  
0.01  
0.1  
0
0.5  
1
1.5  
2
2.5  
3
0.1  
1
10  
100  
Output Current---I (mA)  
Input Voltage---VI(OFF)(V)  
O
DTA114ES3  
CYStek Product Specification  
Spec. No. : C252S3  
Issued Date : 2003.06.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/4  
Power Derating Curve  
250  
200  
150  
100  
50  
0
0
50  
100  
150  
200  
Ambient Temperature---T (℃)  
A
DTA114ES3  
CYStek Product Specification  
Spec. No. : C252S3  
Issued Date : 2003.06.12  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/4  
SOT-323 Dimension  
3
Marking:  
A
Q
C
A1  
Lp  
detail Z  
6A  
1
2
bp  
e1  
W
B
e
A
E
Z
D
3-Lead SOT-323 Plastic  
Surface Mounted Package  
CYStek Package Code: S3  
θ
v
A
He  
mm  
2
0
1
Style: Pin 1.Base 2.Emitter 3.Collector  
scale  
*: Typical  
Inches  
Min. Max.  
Millimeters  
Inches  
Millimeters  
DIM  
DIM  
Min.  
0.80  
0.00  
0.30  
0.10  
1.80  
1.15  
1.3  
Max.  
1.10  
0.10  
0.40  
0.25  
2.20  
1.35  
-
Min.  
0.0256  
Max.  
-
Min.  
0.65  
2.00  
0.15  
0.13  
0.2  
Max.  
-
A
A1  
bp  
C
0.0315 0.0433  
0.0000 0.0039  
0.0118 0.0157  
0.0039 0.0098  
0.0709 0.0866  
0.0453 0.0531  
e1  
He  
Lp  
Q
0.0787 0.0886  
0.0059 0.0177  
0.0051 0.0091  
2.25  
0.45  
0.23  
-
D
v
0.0079  
0.0079  
-
-
-
E
w
0.2  
10°  
-
0°  
e
0.0512  
-
-
θ
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
• Lead: 42 Alloy ; solder plating  
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0  
Important Notice:  
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
• CYStek reserves the right to make changes to its products without notice.  
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
DTA114ES3  
CYStek Product Specification  

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