GURAE83 [CYSTEKEC]
Low Vcesat NPN Epitaxial Planar Transistor; 低VCESAT NPN外延平面晶体管
| 型号： | GURAE83 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Low Vcesat NPN Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C606FP
Issued Date : 2005.03.29
Revised Date :
CYStech Electronics Corp.
Page No. : 1/4
DLow4Vc4esaHt NP1N1EpFitaxPial Planar Transistor
Features
• Low VCE(sat)
• High BVCEO
• Excellent current gain characteristics
• Pb-free package
Symbol
Outline
D44H11FP
TO-220FP
B：Base
C：Collector
E：Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
VCEO
VEBO
IC
80
V
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
80
6
10
Collector Current (DC)
A
Collector Current (Pulse)
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
ICP
20 (Note 1)
PD
2
50
W
PD
RθJA
RθJC
Tj
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
62.5
2.5
150
°C/W
°C/W
°C
Storage Temperature
Tstg
-55~+150
°C
≦
≦
Note : 1. Single Pulse , Pw 380µs,Duty 2%.
D44H11FP
CYStek Product Specification
Spec. No. : C606FP
Issued Date : 2005.03.29
Revised Date :
CYStech Electronics Corp.
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCEO(SUS)
80
-
-
10
50
0.6
1.5
-
V
µA
µA
V
IC=30mA, IB=0
ICES
-
-
VCE=80V, VBE=0
VEB=5V, IC=0
IEBO
-
-
*VCE(sat)
*VBE(sat)
*hFE
-
0.3
1.0
-
IC=8A, IB=0.4A
IC=8A, IB=0.8A
VCE=1V, IC=2A
VCE=1V, IC=4A
VCE=6V, IC=500mA, f=20MHz
VCB=10V, f=1MHz
-
V
60
40
-
-
-
*hFE
-
-
fT
50
130
-
-
MHz
pF
Cob
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
5000
2500
2000
1500
1000
500
25mA
20mA
15mA
4500
4000
3500
3000
2500
2000
1500
1000
500
10mA
8mA
6mA
4mA
10mA
5mA
2mA
IB=0mA
IB=0mA
0
0
0
2
4
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
Grounded Emitter Output Characteristics
Grounded Emitter Output Characteristics
140
700
600
500
400
300
200
100
0
500uA
400uA
2.5mA
2mA
120
100
80
60
40
20
0
300uA
1.5mA
1mA
200uA
100uA
500uA
IB=0uA
IB=0uA
0
1
2
3
4
5
6
0
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Collector To Emitter Voltage---VCE(V)
D44H11FP
CYStek Product Specification
Spec. No. : C606FP
Issued Date : 2005.03.29
Revised Date :
CYStech Electronics Corp.
Page No. : 3/4
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
1000
100
10
V
CE(SAT)
VCE = 5V
VCE = 2V
IC = 20IB
IC = 50IB
VCE = 1V
IC = 10IB
10
1
10
100
1000
10000
1
10
100
1000
10000
Collector Current---IC(mA)
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
10000
1000
100
2.5
2
VCE(SAT) @ IC = 10IB
1.5
1
0.5
0
0
50
100
150
200
1
10
100
1000
10000
Ambient Temperature---TA(℃)
Collector Current---IC(mA)
Power Derating Curve
60
50
40
30
20
10
0
0
50
100
150
200
Case Temperature---TC(℃)
D44H11FP
CYStek Product Specification
Spec. No. : C606FP
Issued Date : 2005.03.29
Revised Date :
CYStech Electronics Corp.
Page No. : 4/4
TO-220FP Dimension
Marking:
D44H11
Style: Pin 1.Base 2.Collector 3.Emitter
4.Collector
3-Lead TO-220FP Plastic Package
CYStek Package Code: FP
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
Min.
0.392
0.583
Max.
Min.
Max.
0.408
0.598
10.360
A
A1
A2
A3
b
0.169
0.185
4.300
4.700
D
E
9.960
0.051 REF
1.300 REF
14.800 15.200
2.540 TYP
0.110
0.098
0.020
0.043
0.059
0.020
0.126
0.114
0.030
0.053
0.069
0.030
2.800
2.500
0.500
1.100
1.500
0.500
3.200
2.900
0.750
1.350
1.750
0.750
e
0.100 TYP
F
0.106 REF
0.138 REF
2.700 REF
Φ
L
3.500 REF
b1
b2
c
1.102
1.118
0.075
0.083
28.000 28.400
L1
L2
0.067
0.075
1.700
1.900
1.900
2.100
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
D44H11FP
CYStek Product Specification
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