MTA5D0N04I3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTA5D0N04I3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 1/8
N-Channel Enhancement Mode Power MOSFET
MTA5D0N04I3
BVDSS
40V
51A
5.7mΩ(typ)
6.6mΩ(typ)
ID@ VGS=10V, TC=25°C
RDS(ON)@VGS=4.5V, ID=20A
RDS(ON)@VGS=2.5V, ID=15A
Features
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package & Halogen-free package
Symbol
Outline
TO-251
MTA5D0N04I3
G：Gate
D：Drain
S：Source
G
D S
Ordering Information
Device
Package
TO-251
(RoHS compliant and halogen-free package)
Shipping
80 pcs/tube, 50 tubes/box
MTA5D0N04I3-0-UA-G
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA : 80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTA5D0N04I3
CYStek Product Specification
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 2/8
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
40
±12
51
32
204
46
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Pulsed Drain Current
ID
A
(Note 1)
IDM
IAS
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=20A, VDD=15V (Note 3)
EAS
EAR
200
6
42
mJ
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation @ TC=25℃
(Note 2)
PD
W
Total Power Dissipation @ TC=100℃
17
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle ≤ 1%.
3. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=12A, VDD=15V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
3
110
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
40
0.3
-
-
-
-
-
5.7
6.6
25
-
1.2
100
1
25
8
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
V
nA
μA
±
±
-
-
-
-
-
-
VGS= 12V, VDS=0V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=125°C
VGS =4.5V, ID=20A
VGS =2.5V, ID=15A
VDS =10V, ID=10A
IDSS
Ω
m
*RDS(ON)
*GFS
10
-
S
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
-
-
-
-
-
-
-
80.9
5.3
-
-
-
-
-
-
-
nC
ns
VDS=20V, ID=20A, VGS=10V
VDS=20V, ID=20A, VGS=10V,
11.7
11.8
17.2
87.4
6.2
Ω
RGS=1
*td(OFF)
*tf
MTA5D0N04I3
CYStek Product Specification
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 3/8
Ciss
Coss
Crss
Rg
-
-
-
-
2627
174
127
1.6
-
-
-
-
pF
VDS=20V, VGS=0V, f=1MHz
Ω
f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
51
204
1.2
-
A
0.78
14.5
9.5
V
ns
nC
IS=6A, VGS=0V
IF=6A, VGS=0V, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTA5D0N04I3
CYStek Product Specification
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 4/8
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
200
10V, 9V, 8V,7V,6V,5V,4V,3V
180
160
140
120
100
80
2.5V
0.8
0.6
0.4
2
V
60
40
μ
ID=250 A,
VGS=1.5V
VGS=0V
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
10
1
1.2
1
Tj=25°C
VGS=4.5V
VGS=2.5V
0.8
0.6
0.4
0.2
Tj=150°C
VGS=10V
0.01
0.1
1
10
100
0
4
8
12
16
20
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2.4
2
20
18
16
14
12
10
8
VGS=4.5V, ID=20A
ID=20A
1.6
1.2
0.8
0.4
0
6
4
RDS(ON)@Tj=25°C : 5.7mΩ
2
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
GS, Gate-Source Voltage(V)
8
10
V
Tj, Junction Temperature(°C)
MTA5D0N04I3
CYStek Product Specificatio
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 5/8
Typical Characteristics(Cont.)
NormalizedThreshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
1000
Coss
0.8
0.6
0.4
100
10
Crss
ID=250μA
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
8
6
4
2
0
1
VDS=10V
Pulsed
Ta=25°C
VDS=20V
0.1
0.01
ID=20A
0
10 20 30 40 50 60 70 80 90 100
Total Gate Charge---Qg(nC)
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
60
1000
100
10
RDS(ON)
Limited
50
40
30
20
10
0
10 s
μ
100μs
1ms
10ms
100ms
DC
1
TC=25°C, Tj=150°, VGS=10V
θJC
θJC
VGS=10V, R =3°C/W
R
=3°C/W, Single Pulse
0.1
25
50
75
100
125
150
175
0.1
1
10
DS, Drain-Source Voltage(V)
100
V
TC, Case Temperature(°C)
MTA5D0N04I3
CYStek Product Specification
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 6/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Case
200
180
160
140
120
100
80
1000
900
800
700
600
500
400
300
200
100
0
VDS=10V
TJ(MAX)=150°C
TC=25°C
θ
R
JC=3°C/W
60
40
20
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
1
2
GS, Gate-Source Voltage(V)
3
V
Transient Thermal Response Curves
1
D=0.5
JC
1.Rθ (t)=r(t)*R
θ
JC
0.2
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.1
0.1
θJC
4.R (t)=3 °C/W max.
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
t1, Square Wave Pulse Duration(s)
1.E-01
1.E+00
1.E+01
MTA5D0N04I3
CYStek Product Specification
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 7/8
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTA5D0N04I3
CYStek Product Specification
Spec. No. : C054I3
Issued Date : 2017.03.15
Revised Date :
CYStech Electronics Corp.
Page No. : 8/8
TO-251 Dimension
Marking:
4
Product
Name
A5D0
N04
□□□□
Date
Code
1
2
3
Style: Pin 1.Gate 2.Drain 3.Source
3-Lead TO-251 Plastic Package
CYStek Package Code: I3
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
6.65
5.40
14.90
0.90
0.70
2.35
2.35
0.58
Min.
Max.
Min.
Max.
2.40
5.70
7.80
1.25
0.58
A
B
C
D
E
F
0.2500
0.2047
0.5709
0.0276
0.0199
0.0886
0.0886
0.0169
0.2618
0.2126
0.5866
0.0354
0.0276
0.0925
0.0925
0.0228
6.35
5.20
14.50
0.70
0.50
2.25
2.25
0.43
I
J
0.0866
0.2126
0.2992
0.0453
0.0169
0.0945
0.2244
0.3071
0.0492
0.0228
2.20
5.40
7.60
1.15
0.43
K
L
M
N
S
T
0.1181 REF
0.1969 REF
0.1496 REF
3.00 REF
5.00 REF
3.80 REF
G
H
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTA5D0N04I3
CYStek Product Specification
相关型号：
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