MTB025P03KQ8-0-T3-G [CYSTEKEC]

P-Channel Enhancement Mode Power MOSFET;


型号：	MTB025P03KQ8-0-T3-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	P-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：425K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 1/9

CYStech Electronics Corp.

P-Channel Enhancement Mode Power MOSFET

MTB025P03KQ8

BVDSS

-30V

-7.6A

ID@ TA=25°C, VGS=-10V

-6.1A

ID@ TA=70°C, VGS=-10V

RDSON@VGS=-10V, ID=-6A

RDSON@VGS=-4.5V, ID=-5A

Features

• Simple drive requirement

• Low on-resistance

24.0mΩ(typ.)

44.5mΩ(typ.)

• Fast switching speed

• ESD protected gate

• Pb-free lead plating package

Equivalent Circuit

Outline

MTB025P03KQ8

SOP-8

G：Gate S：Source D：Drain

Pin 1

Ordering Information

Device

Package

SOP-8

Shipping

MTB025P03KQ8-0-T3-G

2500 pcs / Tape & Reel

(Pb-free lead plating & halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T3 : 2500 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 2/9

CYStech Electronics Corp.

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

VDS

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

-30

±20

VGS

-7.6

Continuous Drain Current @ TA=25°C, VGS=-10V

Continuous Drain Current @ TA=70°C, VGS=-10V

Pulsed Drain Current

-6.1

IDM

IAS

-40 *1

-30

Avalanche Current @ L=0.1mH

Avalanche Energy @ L=0.1mH, ID=-30A, VDD=-15V

Repetitive Avalanche Energy @ L=0.05mH

EAS

EAR

45 *2

2.5

TA=25℃

Total Power Dissipation

TA=70℃

3.1 *3

2.0 *3

-55~+150

Operating Junction and Storage Temperature Range

Tj, Tstg

°C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max

Note : 1. Pulse width limited by maximum junction temperature.

Symbol

Rth,j-c

Rth,j-a

Value

40 *3

Unit

°C/W

2. 100% tested by conditions of VDS=-15V, L=0.1mH, IAS=-7A, VGS=-10V.

3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad.

Electrical Characteristics (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

I_GSS

-30

-1

V_GS=0V, I_D=-250μA

-2.5

±25

-1

-10

31.5

62.5

V_DS=V_GS, I_D=-250μA

V_GS=±16V, V_DS=0V

V_DS=-24V, V_GS=0V

V_DS=-24V, V_GS=0V, Tj=125°C

V_GS=-10V, I_D=-6A

μA

I_DSS

44.5

R_{DS(ON) *1}

mΩ

V_GS=-4.5V, I_D=-5A

G_FS

11.2

V_DS=-5V, I_D=-5A

Dynamic

Ciss

Coss

Crss

811

162

146

V_DS=-15V, V_GS=0V, f=1MHz

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 3/9

CYStech Electronics Corp.

Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

t_{d(ON) *1, 2}

V_DD=-15V, I_D=-6A, V_GS=-10V,

17.2

34.2

9.8

16.3

2.5

3.9

*1, 2

R_G=1

t_{d(OFF) *1, 2}

t_f

*1, 2

Qgs

Qgd

*1, 2

V_DS=-15V, I_D=-6A, V_GS=-10V

f=1MHz

Source-Drain Diode

I_S

-2.6

-10

-1.2

I_{SM *3}

V_{SD *1}

trr

-0.87

9.5

3.5

I_S=-6A, V_GS=0V

I_F=-6A, dI_F/dt=100A/μs

Qrr

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

Recommended Soldering Footprint

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 4/9

CYStech Electronics Corp.

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.2

1.1

-10V,-9V,-8V, -7V, -6V

-5V

-4V

3.5V

0.9

0.8

-3V

I_D=-250 A,

V_GS=0V

V_GS=-2.5V

-75 -50 -25

25 50 75 100 125 150 175

-V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Source Drain Current vs Source-Drain Voltage

100

1.2

V_GS=0V

V_GS=-4.5V

Tj=25°C

0.8

0.6

0.4

0.2

Tj=150°C

V_GS=-10V

0.01

0.1

-I_D, Drain Current(A)

-I_S, Source Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

150

V_GS=-10V, I_D=-6A

R_DSON@Tj=25°C : 24mΩ typ.

1.8

1.6

1.4

1.2

120

I_D=-6A

0.8

0.6

0.4

-75 -50 -25

25 50 75 100 125 150 175

-V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 5/9

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

1.4

1.2

10000

1000

100

Ciss

I_D=-1mA

0.8

0.6

0.4

Crss

I_D=-250 A

oss

-75 -50 -25

25 50 75 100 125 150 175

-V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

100

V_DS=-5V

V_DS=-10V

0.1

0.01

V_DS=-15V

Pulsed

T_A=25°C

I_D=-6A

0.001

0.01

0.1

-I_D, Drain Current(A)

Qg, Total Gate Charge(nC)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

100

R_DS(ON)

Limited

100μs

1ms

10ms

100ms

0.1

0.01

T_A=25°C, V_GS=-10V, R _JA=40°C/W

T_A=25°C, Tj=150°C, V_GS=-10V

single pulse

_JA=40°C/W, Single Pulse

100

125

150

175

0.01

0.1

100

-I_D, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 6/9

CYStech Electronics Corp.

Typical Characteristics(Cont.)

Single Pulse Power Rating, Junction to Ambient

(Note on page 2)

Typical Transfer Characteristics

350

300

250

200

150

100

V_DS=-10V

T_J(MAX)=150°C

T_A=25°C

_JA=40°C/W

0.0001 0.001

0.01 0.1

Pulse Width(s)

100

-V_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.R _JA(t)=r(t)*R

0.05

2.Duty Factor, D=t¹/t²

3.T^JM-T^A=P^DM*R_θ^JA(t)

0.02

0.01

_JA=40°C/W

4.R

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

t₁, Square Wave Pulse Duration(s)

1.E+00

1.E+01

1.E+02

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 7/9

CYStech Electronics Corp.

Reel Dimension

Carrier Tape Dimension

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 8/9

CYStech Electronics Corp.

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

Time 25 °C to peak temperature

6°C/second max.

6 minutes max.

6°C/second max.

8 minutes max.

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB025P03KQ8

CYStek Product Specification

Spec. No. : C736Q8

Issued Date : 2017.09.12

Revised Date : 2017.09.29

Page No. : 9/9

CYStech Electronics Corp.

Dimension

Marking:

Device Name

Date Code

B025

P03K

Date Code(counting from left to right) :

1^stcode: year code, the last digit of Christian year

2^ndcode : month code, Jan→A, Feb→B, Mar→C, Apr→D

May→E, Jun→F, Jul→G, Aug→H, Sep→J,

Oct→K, Nov→L, Dec→M

3^rdand 4^thcodes : prodcution serial number, 01~99

8-Lead SOP-8 Plastic Package

CYStek Package Code: Q8

Millimeters

Min. Max.

Inches

Min.

Millimeters

Inches

Min.

0.150

0.228

DIM

Max.

0.069

0.010

0.061

0.020

0.010

0.200

Min.

3.800

5.800

Max.

4.200

6.200

Max.

0.165

0.244

1.350

0.100

1.350

0.330

0.170

4.700

1.750

0.250

1.550

0.510

0.250

5.100

0.053

0.004

0.053

0.013

0.006

0.185

1.270 (BSC)

0.050 (BSC)

0.300

1.270

8°

0.012

0.050

8°

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB025P03KQ8

CYStek Product Specification

MTB025P03KQ8-0-T3-G [CYSTEKEC]

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