MTB050P10H8-0-T6-G [CYSTEKEC]

P-Channel Enhancement Mode Power MOSFET;


型号：	MTB050P10H8-0-T6-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	P-Channel Enhancement Mode Power MOSFET
文件：	总11页 (文件大小：610K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 1/11

P-Channel Enhancement Mode Power MOSFET

BVDSS

-100V

-20A

MTB050P10H8

ID@VGS=-10V, TC=25°C

ID@VGS=-10V, TA=25°C

-4.4A

39.5mΩ

45.3mΩ

VGS=-10V, ID=-15A

Features

RDSON(TYP)

VGS=-4.5V, ID=-12A

• Single Drive Requirement

• Low On-resistance

• Fast Switching Characteristic

• Pb-free lead plating and Halogen-free package

Symbol

Outline

DFN5×6

MTB050P10H8

Pin 1

G：Gate D：Drain S：Source

Pin 1

Ordering Information

Device

Package

Shipping

3000 pcs / Tape & Reel

DFN5×6

MTB050P10H8-0-T6-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 2/11

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

10s

Steady State Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

-100

±20

-20

-12.7

Continuous Drain Current @ TC=25°C, VGS=-10V (Note1)

Continuous Drain Current @ TC=100°C, VGS=-10V (Note1)

Continuous Drain Current @ TA=25°C, VGS=-10V (Note2)

Continuous Drain Current @ TA=70°C, VGS=-10V (Note2)

-7.4

-5.9

-4.4

IDSM

-3.5

Pulsed Drain Current

(Note3)

IDM

IAS

-80

-20

Avalanche Current@L=1mH

(Note4)

Avalanche Energy @ L=2mH, ID=-20A, VDD=-50V (Note4)

EAS

400

16.8

TC=25℃

TC=100℃

TA=25°C

TA=70°C

(Note1)

(Note2)

Total Power Dissipation

5.4

3.4

1.9

1.2

PDSM

Operating Junction and Storage Temperature Range

Tj, Tstg

-55~+150

°C

Thermal Data

Parameter

Symbol Typical Maximum

Unit

Thermal Resistance, Junction-to-case

Thermal Resistance, Junction-to-ambient

Rth,j-c

2.5

t≤10s

Steady State

°C/W

Rth,j-a

(Note2)

Note : 1 The power dissipation P_Dis based on T_J(MAX)=150 C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2 The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air

environment with T_A=25 C. The power dissipation P_DSMis based on R_θJAand the maximum allowed junction

temperature of 150°C. The value in any given application depends on the user’s specific board design.

3 Pulse width limited by junction temperature T_J(MAX)=150 C.

4. Ratings are based on low frequency and low duty cycles to keep initial T_J=25 C. 100% tested by conditions of

L=1mH, IAS=-20A, VGS=-10V, VDD=-50V.

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BV_DSS

V_GS(th)

G_FS

-100

-1

-2.5

V_GS=0V, I_D=-250μA

V_DS= V_GS, I_D=-250μA

V_DS=-15V, I_D=-10A

100

-1

I_GSS

V_GS= 20V

V_DS=-80V, V_GS=0V

V_DS=-80V, V_GS=0, Tj=70°C

V_GS=-10V, I_D=-15A

I_DSS

μA

-10

39.5

45.3

R_{DS(ON) *1}

V_GS=-4.5V, I_D=-12A

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 3/11

Dynamic _*4

Ciss

2191

159

40.7

7.2

V_DS=-50V, V_GS=0V, f=1MHz

Coss

Crss

*1, 2

V_DS=-80V, V_GS=-10V, I_D=-15A

V_DS=-50V, I_D=-15A, V_GS=-10V

Qgs

*1, 2

Qgd

4.0

*1, 2

t_{d(ON) *1, 2}

13.4

23.6

68.6

21.2

*1, 2

R_G=2.7

t_{d(OFF) *1, 2}

t_f

*1, 2

f=1MHz

Source-Drain Diode

I_S

-20

-80

-1

I_{SM *3}

V_{SD *1}

trr

-0.71

28.4

40.9

I_S=-2A, V_GS=0V

I_F=-15A, dI_F/dt=100A/μs

Qrr

Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

*2.Independent of operating temperature

*3.Pulse width limited by maximum junction temperature.

*4.Guaranteed by design, not subject to production testing.

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 4/11

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V

0.8

0.6

0.4

3.5

I_D=-250μA,

V_GS=0V

-V_GS=2.5V

-75 -50 -25

25 50 75 100 125 150 175

-V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

V_GS=0V

V_GS=-4.5V

V_GS=-10V

Tj=25°C

0.8

0.6

0.4

0.2

Tj=150°C

0.1

100

-I_D, Drain Current(A)

-I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

V_GS=-10V, I_D=-15A

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

500

2.4

450

400

350

300

250

200

150

100

I_D=-15A

1.6

1.2

0.8

0.4

R_DS(ON)@ Tj=25°C : 39.5mΩ (typ.)

-75 -50 -25

25 50 75 100 125 150 175

-V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 5/11

Typical Characteristics(Cont.)

Threshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

Ciss

I_D=-1mA

1000

0.8

0.6

0.4

0.2

oss

100

I_D=-250μA

Crss

-75 -50 -25

25 50 75 100 125 150 175

-V_DS, Drain-Source Voltage(V)

Tj, Junction Temperature(°C)

Gate Charge Characteristics

Maximum Safe Operating Area

100

R_DSON

Limited

100μs

10ms

100ms

0.1

0.01

V_DS=-80V

T_A=25°C, V_GS=-10V,Tj=150°C

I_D=-15A

=65°C/W, Single Pulse

10 15 20 25 30 35 40 45

Qg, Total Gate Charge(nC)

0.01

0.1

100

1000

-V_DS, Drain-Source Voltage(V)

Forward Transfer Admittance vs Drain Current

V_DS=-10V

Maximum Drain Current vs Junction Temperature

100

V_DS=-15V

0.1

T_A=25°C, V_GS=-10V,

Pulsed

Ta=25°C

=65°C/W

0.01

100

125

150

175

0.001

0.01

0.1

-I_D, Drain Current(A)

Tj, Junction Temperature(°C)

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 6/11

Typical Characteristics(Cont.)

Single Pulse Maximum Power Dissipation

Typical Transfer Characteristics

300

250

200

150

100

V_DS=-10V

T_J(MAX)=150°C

T_A=25°C

_JA=65°C/W

0.0001 0.001 0.01

0.1

Pulse Width(s)

100 1000

-V_GS, Gate-Source Voltage(V)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

100

R_DSON

Limited

100μs

1ms

10ms

100ms

V_GS=-10V, Rθ =3°C/W

T_C=25°C, V_GS=-10V,Tj=150°C

=3°C/W, Single Pulse

0.1

100

125

150

175

0.1

100

1000

T_C, Case Temperature(°C)

-V_DS, Drain-Source Voltage(V)

Single Pulse Maximum Power Dissipation

Power Derating Curve

600

500

400

300

200

100

T_J(MAX)=150°C

T_C=25°C

_JC=3°C/W

100

125

150

175

0.0001

0.001

0.01 0.1

Pulse Width(s)

T_C, Case Temperature(℃)

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 7/11

Typical Characteristics(Cont.)

Transient Thermal Response Curves

D=0.5

0.2

0.1

1.R (t)=r(t)*R

0.1

2.Duty Factor, D=t1/t2

0.05

3.T_JM-T_A=P_DM*R (t)

4.R =65°C/W

0.02

0.01

0.001

Single Pulse

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t₁, Square Wave Pulse Duration(s)

Transient Thermal Response Curves

D=0.5

1.R_θ_JC(t)=r(t)*R

0.2

0.1

2.Duty Factor, D=t¹/t²

3.T^JM-T^C=P^DM*R_θ^JC(t)

4.R =3 °C/W

0.05

0.02

0.01

0.1

Single Pulse

0.01

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

t₁, Square Wave Pulse Duration(s)

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 8/11

Recommended Soldering Footprint & Stencil Design

unit : mm

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 9/11

Reel Dimension

Carrier Tape Dimension

Pin #1

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 10/11

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(T^Smax)

−Time(ts min to ts max)

100°C

150°C

60-120 seconds

150°C

200°C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183°C

60-150 seconds

240 +0/-5 °C

217°C

60-150 seconds

260 +0/-5 °C

Peak Temperature(TP)

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTB050P10H8

CYStek Product Specification

Spec. No. : C975H8

Issued Date : 2016.08.01

Revised Date :

CYStech Electronics Corp.

Page No. : 11/11

DFN5×6 Dimension

Marking :

Device

Name

B050

P10

Date Code

8-Lead DFN5×6 Plastic Package

CYS Package Code : H8

Millimeters

Inches

Millimeters

Inches

Min.

0.047

0.014

DIM

Min.

Max.

Min.

Max.

Min.

1.190

0.350

Max.

1.390

0.450

Max.

0.055

0.018

DIM

0.900

1.000

0.035

0.039

0.254 REF

0.010 REF

4.944

5.974

3.910

3.375

4.824

5.674

5.096

6.126

4.110

3.575

4.976

5.826

0.195

0.235

0.154

0.133

0.190

0.223

0.201

0.241

0.162

0.141

0.196

0.229

1.270 TYP.

0.050 TYP.

0.559

0.424

0.574

10°

0.711

0.576

0.726

12°

0.022

0.017

0.023

10°

0.028

0.023

0.029

12°

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead: Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB050P10H8

CYStek Product Specification

MTB050P10H8-0-T6-G [CYSTEKEC]

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