MTB095N10KRM3-0-T2-G [CYSTEKEC]
100V N-Channel Enhancement Mode MOSFET;
| 型号： | MTB095N10KRM3-0-T2-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | 100V N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：665K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
100V N-Channel Enhancement Mode MOSFET
MTB095N10KRM3
BVDSS
100V
ID@VGS=10V, TA=25°C
2.9A
RDSON@VGS=10V, ID=1.5A
RDSON@VGS=4.5V, ID=1A
95.8mΩ(typ)
121.6mΩ(typ)
Features
• Simple drive requirement
• Small package outline
• ESD protected gate
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-89
MTB095N10KRM3
G：Gate
G D S
S：Source
D：Drain
Ordering Information
Device
Package
SOT-89
Shipping
1000 pcs / Tape & Reel
MTB095N10KRM3-0-T2-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
VDS
Limits
100
±20
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
2.9
2.3
16
Continuous Drain Current @ TA=25C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
ID
A
IDM
PD
2
W
Maximum Power Dissipation@ TA=25℃ (Note 3)
Linear Derating Factor
0.016
W/C
C
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Thermal Performance
Parameter
Symbol
Limit
62.5
20
Unit
Thermal Resistance, Junction-to-Ambient, max
(Note 3)
RθJA
RθJC
C/W
Thermal Resistance, Junction-to-Case, max
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
100
1.0
-
-
-
-
-
-
2.5
10
1
25
126
195
-
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
V
±
±
-
-
-
-
-
VGS= 16V, VDS=0V
μA
VDS=80V, VGS=0V
VDS=80V, VGS=0V(Tj=70C)
VGS=10V, ID=1.5A
IDSS
95.8
121.6
*RDS(ON)
*GFS
m
VGS=4.5V, ID=1A
-
2.9
S
VDS=10V, ID=1A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
-
-
-
-
-
-
-
301
29
8
5.2
16.6
17
452
44
12
7.8
24.9
25.5
7.8
pF
ns
VDS=50V, VGS=0V, f=1MHz
Ω
VDS=50V, ID=2A, VGS=10V, RG=1
td(OFF)
tf
5.2
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Qg
Qgs
Qgd
-
-
-
6.7
1.1
1.6
10
1.7
2.4
nC
A
VDS=80V, ID=2A, VGS=10V
Source-Drain Diode
*IS
*ISM
*VSD
Trr
-
-
-
-
-
-
-
2.3
9.2
1.2
-
0.81
18.3
9.8
V
ns
nC
VGS=0V, IS=1A
VGS=0V, IF=2A, dIF/dt=100A/μs
Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended soldering footprint
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
1.4
1.2
1
16
14
12
10
8
10V, 9V,8V,7V,6V,5V,4.5V
4V
3.5V
6
0.8
0.6
0.4
VGS=3V
ID=250μA,
4
VGS=0V
2
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
1000
100
10
Tj=25°C
1
0.8
0.6
0.4
0.2
VGS=4.5V
VGS=10V
Tj=150°C
0
2
4
6
8
0.01
0.1
1
10
IDR, Reverse Drain Current(A)
ID, Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
350
300
250
200
150
100
50
2.4
2
VGS=10V, ID=1.5A
ID=1.5A
1.6
1.2
0.8
0.4
0
RDS(ON)@ Tj=25°C : 95.8 mΩ typ.
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.5
1.3
1.1
0.9
0.7
0.5
1000
Ciss
100
Coss
ID=1mA
10
ID=250μA
Crss
1
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
10
1
10
VDS=50V
VDS=80V
8
6
4
2
0
VDS=15V
0.1
0.01
Pulsed
Ta=25°C
ID=2A
0
1
2
3
4
5
6
7
8
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
3.5
3
100
10
RDS(ON)
100μs
1ms
2.5
2
Limited
1
10ms
1.5
1
0.1
100ms
1s
TA=25°C, Tj(max)=150°C,
VGS=10V, RθJA=62.5°C/W
Single Pulse
DC
0.01
0.001
0.5
0
TA=25°C, VGS=10V, RθJA=62.5°C/W
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
16
500
400
300
200
100
0
VDS=10V
14
TJ(MAX)=150°C
TA=25°C
12
10
8
RθJA=62.5°C/W
6
4
2
0
0.0001 0.001
0.01 0.1
Pulse Width(s)
1
10
100
0
1
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
D=0.5
0.2
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=62.5°C/W
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB095N10KRM3
CYStek Product Specification
Spec. No. : C714M3
Issued Date : 2019.02.19
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOT-89 Dimension
Marking:
A
2
1
3
Device Name
BHNH
Date Code
□□□□
H
C
D
B
Style: Pin 1. Gate 2. Drain 3. Source
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
Date Code : (from left to right)
1. 1st code : year code, the last digit of Christian year
2. 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D, May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M
3. 3nd and 4th codes, serial number of production lot, 01~99
Inches
Min. Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
Millimeters
Inches
Min. Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min. Max.
1.50 TYP
3.00 TYP
DIM
DIM
Min.
4.40
3.94
Max.
4.60
4.25
A
B
C
D
E
F
G
H
I
1.55 REF
1.40
0.35
1.60
0.44
0.0906 0.1024
0.0126 0.0205
2.30
0.32
2.60
0.52
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB095N10KRM3
CYStek Product Specification
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