MTB1D0N03RH8-0-T6-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB1D0N03RH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总11页 (文件大小：443K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 1/11
N-Channel Enhancement Mode Power MOSFET
MTB1D0N03RH8
BVDSS
30V
ID@VGS=10V, TC=25ꢀC(silicon limit)
ID@VGS=10V, TC=25ꢀC(package limit)
ID@VGS=10V, TA=25ꢀC
200A
60A
34.5A
0.7mΩ
1.1mΩ
Features
VGS=10V, ID=20A
RDSON(TYP)
Single Drive Requirement
Low On-resistance
VGS=4.5V, ID=20A
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
Symbol
Outline
DFN5×6
MTB1D0N03RH8
Pin 1
D
D
D
D
D
D
D
D
S
G
S
S
S
S
S
G
G：Gate D：Drain S：Source
Pin 1
Ordering Information
Device
Package
Shipping
3000 pcs / tape & reel
DFN 5 ×6
MTB1D0N03RH8-0-T6-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 2/11
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
10s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
30
±20
V
Continuous Drain Current @ TC=25C, VGS=10V
200
(silicon limit)
Continuous Drain Current @ TC=100C, VGS=10V
(silicon limit)
Continuous Drain Current @ TC=25C, VGS=10V
(package)
(Note 1)
ID
126.5
(Note 1)
60
(Note 1)
A
52
41.6
37.5
34.5
27.6
24.9
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Continuous Drain Current @ TA=85C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=50A, VDD=15V
Repetitive Avalanche Energy @ L=0.05mH
TC=25℃
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
IDSM
IDM
IAS
EAS
EAR
588 *1
108
1250
8 *2
mJ
83
33
PD
TC=100℃
Total Power Dissipation
W
5.7
4.0
3.6
2.5
1.8
1.6
TA=25C
TA=70C
TA=85C
(Note 2)
(Note 2)
(Note 2)
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
C
Thermal Data
Parameter
Symbol Typical Maximum Unit
t≤10s
Steady State
18
42
1.3
22
50
1.5
Thermal Resistance, Junction-to-ambient
RθJA
(Note 2)
C/W
Thermal Resistance, Junction-to-case
RθJC
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
°
with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150ꢀC. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25ꢀC.
4.100% tested by conditions of L=0.1mH, IAS=30A, VGS=10V, VDD=15V
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 3/11
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
30
1
-
-
-
-
-
-
-
-
-
2.5
-
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
V
42.5
-
-
-
0.7
1.1
S
nA
*1
ꢁ
100
1
ꢁ
IGSS
VGS= 20V, VDS=0V
VDS =24V, VGS =0V
VDS =24V, VGS =0V, Tj=125C
VGS =10V, ID=20A
IDSS
μA
25
1
1.5
Ω
m
RDS(ON) *1
Dynamic
VGS =4.5V, ID=20A
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
6257
4552
214
8134
5918
278
162
82
pF
VGS=0V, VDS=20V, f=1MHz
VDS=20V, VGS=10V, ID=20A
Qg(VGS=10V)
Qg(VGS=4.5V)
108
*1, 2
*1, 2
54.6
19.6
20.9
30.4
20.6
84.8
14.2
0.8
nC
Qgs
-
-
*1, 2
Qgd
*1, 2
td(ON) *1, 2
45.6
42
127
30
VDD=15V, ID=20A, VGS=10V,
tr
*1, 2
ns
td(OFF) *1, 2
RG=1Ω
tf
*1, 2
f=1MHz
Ω
Rg
-
Source-Drain Diode
IS
-
-
-
-
-
-
-
60
588
1.2
91
*1
A
ISM *3
VSD *1
trr
0.77
69.7
82.1
V
ns
nC
IS=20A, VGS=0V
IF=20A, dIF/dt=100A/μs
Qrr
107
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 4/11
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
200
180
160
140
120
100
80
10V, 9V, 8V,7V,6V,5V
4V
3.5V
0.8
0.6
0.4
60
ID=250μA,
40
VGS=2.5V
VGS=3V
4
VGS=0V
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
5
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10
1.2
VGS=0V
VGS=4.5V
6V
7V
1
0.8
0.6
0.4
0.2
ꢂꢃ=ꢐ5ꢀC
10V
1
ꢂꢃ=ꢑ5ꢒꢀC
0.1
0
2
4
6
8
10 12 14 16 18 20
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
5
4
3
2
1
0
2.8
ID=20A
2.4
2
VGS=10V, ID=20A
1.6
1.2
0.8
0.4
0
RDS(ON)@ꢂꢃ=ꢐ5ꢀC : ꢒꢔ7ꢉΩ ꢆꢕꢊꢔ
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB1D0N03RH8
CYStek Product Specificat
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 5/11
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
Coss
0.8
0.6
0.4
0.2
1000
ID=250μA
Crss
100
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
VDS, Drain-Source Voltage(V)
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=15V
8
6
4
2
0
VDS=15V
1
VDS=20V
0.1
0.01
ꢂa=ꢐ5ꢀC
Pulsed
ID=22A
100
0
20
40
60
80
120
0.001
0.01
0.1
1
10
100
Qg, Total Gate Charge(nC)
ID, Drain Current(A)
Maximum Drain Current vs Case Temperature
Silicon Limit
Maximum Safe Operating Area
250
1000
RDSON
Limited
200
150
100
50
100
10
1
100μs
1ms
10ms
100m
DC
Package Limit
TC=ꢐ5ꢀC, ꢂꢃ=ꢑ5ꢒꢀC
VGS=10V, RθJC=ꢑꢔ5ꢀCꢖꢗ
Single Pulse
VGS=ꢑꢒꢘ, ꢂꢃꢌꢉaꢙꢍ=ꢑ5ꢒꢀC,
RθJC=ꢑꢔ5ꢀCꢖꢗ
0
0.1
25
50
75
100
125
150
175
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
TC, Caꢏe ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 6/11
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
200
1000
900
800
700
600
500
400
300
200
100
0
VDS=10V
180
TJ(MAX)=ꢑ5ꢒꢀC
TC=ꢐ5ꢀC
160
140
120
100
80
RθJC=ꢑꢔ5ꢀCꢖꢗ
60
40
20
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Single Pulse Maximum Power Dissipation, Nunction to
Ambient
Maximum Safe Operating Area
300
250
200
150
100
50
1000
100
10
RDSON
Limited
TJ(MAX)=ꢑ5ꢒꢀC
TA=ꢐ5ꢀC
RθJA=5ꢒꢀCꢖꢗ
100μs
1ms
10ms
100ms
1
1s
TA=ꢐ5ꢀC, ꢘGS=ꢑꢒꢘ,ꢂꢃ=ꢑ5ꢒꢀC
RθJA=5ꢒꢀCꢖꢗ, ꢓꢇꢅgꢚe Pꢄꢚꢏe
0.1
0.01
DC
0
0.01
0.1
1
10
100
0.0001 0.001 0.01
0.1 1
Pulse Width(s)
10
100 1000
-VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Junction Temperature
40
35
30
25
20
15
10
5
VGS=ꢑꢒꢘ, ꢂꢃꢌꢉaꢙꢍ=ꢑ5ꢒꢀC,
RθJA=5ꢒꢀCꢖꢗ
0
25
50
75
100
125
150
175
ꢂꢃ, Jꢄꢅcꢆꢇꢈꢅ ꢂeꢉꢊeꢋaꢆꢄꢋeꢌꢀCꢍ
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 7/11
Typical Characteristics(Cont.)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=5ꢒꢀCꢖꢗ
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Transient Thermal Response Curves
1
D=0.5
0.2
1.RθJC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.5°C/W
0.1
0.05
0.02
0.1
0.01
Single Pulse
1.E-03
0.01
1.E-04
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 8/11
Recommended Soldering Footprint & Stencil Design
unit : mm
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 9/11
Reel Dimension
Carrier Tape Dimension
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 10/11
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
Ramp down rate
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB1D0N03RH8
CYStek Product Specification
Spec. No. : C012H8
Issued Date : 2018.07.19
Revised Date :
CYStech Electronics Corp.
Page No. : 11/11
DFN5×6 Dimension
Marking:
B1D0
N03R
Device Name
Date Code
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
Millimeters
Inches
DIM
Min.
0.90
0.00
0.33
0.20
4.80
3.61
5.90
5.70
Max.
Max.
0.043
0.002
0.020
0.012
0.197
0.156
Min.
3.38
Max.
3.78
Min.
0.133
Max.
0.149
A
A1
b
1.10
0.05
0.51
0.30
5.00
3.96
6.10
5.80
0.035
0.000
0.013
0.008
0.189
0.142
E2
e
H
K
L
L1
θ
1.27 BSC
0.050 BSC
0.41
1.10
0.51
0.06
8ꢀ
0.61
-
0.71
0.20
12ꢀ
0.016
0.043
0.020
0.002
8ꢀ
0.024
-
0.028
0.008
12ꢀ
C
D1
D2
E
0.232
0.224
0.240
0.228
E1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB1D0N03RH8
CYStek Product Specification
相关型号：
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