MTB4D0A03BDH8-0-T6-G [CYSTEKEC]

Dual N-Channel Enhancement Mode Power MOSFET;


型号：	MTB4D0A03BDH8-0-T6-G
厂家：	CYSTECH ELECTONICS CORP.
描述：	Dual N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：376K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 9

Dual N-Channel Enhancement Mode Power MOSFET

MTB4D0A03BDH8

BVDSS

30V

44.9A

ID@VGS=10V, TC=25ꢀC

Features

 Low On Resistance

 Simple Drive Requirement

 Low Gate Charge

 Fast Switching Characteristic

28.4A

9.7A

7.8A

ID@VGS=10V, TC=100ꢀC

ID@VGS=10V, TA=25ꢀC

ID@VGS=10V, TA=70ꢀC

RDS(ON)@VGS=10V, ID=30A

RDS(ON)@VGS=4.5V, ID=20A

5.3mΩ(typ)

7.1mΩ(typ)

 Pb-free lead plating and Halogen-free package

Equivalent Circuit

Outline

DFN5×6

MTB4D0A03BDH8

Pin 1

G：Gate D：Drain S：Source

Ordering Information

Device

Package

Shipping

DFN 5 ×6

MTB4D0A03BDH8-0-T6-G

3000 pcs / tape & reel

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T6 : 3000 pcs / tape & reel,13” reel

Product rank, zero for no rank products

Product name

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 2/ 9

Absolute Maximum Ratings (TC=25C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

±20

44.9

28.4

9.7

7.8

180

Continuous Drain Current @TC=25C, VGS=10V

Continuous Drain Current @TC=100C, VGS=10V

Continuous Drain Current @TA=25C, VGS=10V

Continuous Drain Current @TA=70C, VGS=10V

Pulsed Drain Current @ VGS=10V

Avalanche Current @L=0.1mH

(Note 1)

(Note 2)

(Note 3)

IDSM

IDM

IAS

Single Pulse Avalanche Energy @ L=0.1mH, ID=40Amps,

VDD=15V

Repetitive Avalanche Energy

EAS

EAR

(Note 5)

(Note 3)

(Note 1)

(Note 2)

3.1

12.4

1.5

1.0

TC=25C

TC=100C

TA=25C

Power Dissipation

PDSM

TA=70C

Operating Junction and Storage Temperature

*Drain current limited by maximum junction temperature

Tj, Tstg -55~+150

C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max (Note 4)

Symbol

RθJC

RθJA

Value

Unit

C/W

Note : 1 The power dissipation P_Dis based on T_J(MAX)=150 C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2 The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air

environment with T_A=25 C. The value in any given application depends on the user’s specific board design. The

power dissipation P_DSMis based on R_θJAand the maximum allowed junction temperature of 150 C.

3 Ratings are based on low frequency and low duty cycles to keep initial T_J=25 C.

4. When mounted on1 in² copper pad of FR-4 board ; 125C/W when mounted on minimum copper pad.

5. 100% tested by conditions of L=0.5mH, IAS=15A, VGS=10V, VDD=15V.

Characteristics (Tj=25C, unless otherwise specified)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

2.5

V/C

V_GS=0V, I_D=250μA

1.0

0.03

15.2

Reference to 25C, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=7A

*G_FS

ꢁ

I_GSS

100

V_GS= 20V, V_DS=0V

V_DS=24V, V_GS=0V

V_DS=24V, V_GS=0V, Tj=85C

I_DSS

μA

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 3/ 9

5.3

7.1

V_GS=10V, I_D=30A

V_GS=4.5V, I_D=20A

*R_DS(ON)

Dynamic

*Qg

33.4

4.8

8.6

*Qgs

*Qgd

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

V_DS=15V, I_D=30A, V_GS=10V

13.8

19.4

47.2

10.6

1538

287

212

1.6

2000

375

300

V_DS=15V, I_D=19A, V_GS=10V, R_G=1

V_GS=0V, V_DS=15V, f=1MHz

f=1MHz

0.5

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

104

1.2

0.82

I_S=20A, V_GS=0V

V_GS=0V, I_F=18A, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width 300μs, Duty Cycle2%

Recommended Soldering Footprint

unit : mm

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 4/ 9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

150

10V

120

VGS=4V

VGS=3.5V

0.8

0.6

0.4

ID=250μA,

V^GS=0V

VGS=3V

VGS=2.5V

-75 -50 -25

0 25 50 75 100 125 150 175

Tj, Junction Temperature(ꢀC)

VDS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

Reverse Drain Current vs Source-Drain Voltage

100

1.2

0.8

0.6

0.4

0.2

Tj=25ꢀC

VGS=4.5V

VGS=10V

Tj=150ꢀC

0.01

0.1

100

IDR, Reverse Drain Current(A)

ID, Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

VGS=10V, ID=30A

2.5

ID=30A

RDS(ON)@ꢋꢌ=ꢍ5ꢀC : 5.3ꢈΩ ꢅyp

1.5

0.5

-75 -50 -25 0 25 50 75 100 125 150 175

Tj, Junction Temperature(ꢀC)

VGS, Gate-Source Voltage(V)

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 5/ 9

Typical Characteristics (Cont.)

NormalizedThreshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

ID=1mA

Ciss

1000

0.8

0.6

0.4

ID=250μA

Coss

Crss

100

-75 -50 -25

25 50 75 100 125 150 175

VDS, Drain-Source Voltage(V)

Tj, Junction Temperature(ꢀC)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

100

VDS=10V

VDS=15V

VDS=10V

Pulsed

ꢋa=ꢍ5ꢀC

0.1

0.01

ID=30A

12 16 20 24 28 32 36

Total Gate Charge---Qg(nC)

0.001

0.01

0.1

ID, Drain Current(A)

Maximum Drain Current vs Junction Temperature

Maximum Safe Operating Area

1000

100

RDS(ON)

Limited

100μs

1ms

10ms

100ms

TC=ꢍ5ꢀC, ꢋꢌ=ꢎ5ꢏꢀ, ꢐGS=10V

RθJC=85ꢀCꢑꢒ, ꢊꢄꢆgꢓe Pꢔꢓꢃe

0.1

0.01

VGS=10V, RθJA=85ꢀCꢑꢒ

100

125

150

175

0.01

0.1

100

VDS, Drain-Source Voltage(V)

Tj, Junction ꢋeꢈpeꢕaꢅꢔꢕeꢇꢀCꢉ

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 6/ 9

Typical Characteristics(Cont.)

Typical Transfer Characteristics

Single Pulse Maximum Power Dissipation

160

140

120

100

150

120

VDS=10V

TJ(MAX)=ꢎ5ꢏꢀC

TA=ꢍ5ꢀC

RθJC=85ꢀCꢑꢒ

0.0001

0.001

0.01 0.1

Pulse Width(s)

VGS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

0.2

1.RθJA(t)=r(t)*RθJA

2.Duty Factor, D=t1/t2

3.TJM-TA=PDM*RθJA(t)

4.RθJA=85ꢀC/W

0.1

0.05

0.02

0.01

Single Pulse

0.001

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t1, Square Wave Pulse Duration(s)

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 7/ 9

Reel Dimension

Carrier Tape Dimension

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 8/ 9

Recommended wave soldering condition

Product

Pb-free devices

Peak Temperature

Soldering Time

5 +1/-1 seconds

260 +0/-5 C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3C/second max.

Preheat

−Temperature Min(TS min)

−Temperature Max(TS max)

−Time(ts min to ts max)

100C

150C

60-120 seconds

150C

200C

60-180 seconds

Time maintained above:

−Temperature (TL)

− Time (tL)

183C

60-150 seconds

217C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 C

260 +0/-5 C

Time within 5C of actual peak

temperature(tp)

Ramp down rate

10-30 seconds

20-40 seconds

6C/second max.

6 minutes max.

6C/second max.

8 minutes max.

Time 25 C to peak temperature

Note :1. All temperatures refer to topside of the package, measured on the package body surface.

2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care

should be taken to match the coefficients of thermal expansion between components and PCB. If they are

not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly

cools.

MTB4D0A03BDH8

CYStek Product Specification

Spec. No. : C092H8

Issued Date : 2018.08.06

Revised Date :

CYStech Electronics Corp.

Page No. : 9/ 9

DFN5×6 Dimension

Marking:

Device

Name

B4D0A

03BD

Date

Code

8-Lead power pak Plastic Package

8-Lead DFN5×6 Plastic Package

CYStek Package Code: H8

CYS Package Code : H8

Millimeters

DIM

Inches

Min.

Millimeters

Inches

Min. Max.

0.050 BSC

DIM

Min.

Max.

0.043

0.020

0.012

0.197

0.156

0.240

0.228

0.149

Min.

Max.

0.900

0.330

0.200

4.800

3.610

5.900

5.700

3.380

1.100

0.510

0.300

5.000

3.960

6.100

5.800

3.780

0.035

0.013

0.008

0.189

0.142

0.232

0.224

0.133

1.270 BSC

0.410

1.100

0.510

0.060

0.500

0ꢀ

0.610

0.710

0.200

0.410

1.100

0.510

0.060

0.500

0ꢀ

12ꢀ

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

 Lead: Pure tin plated.

 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

 CYStek reserves the right to make changes to its products without notice.

 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTB4D0A03BDH8

CYStek Product Specification

MTB4D0A03BDH8-0-T6-G [CYSTEKEC]

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