MTC6604N6-0-T1-G [CYSTEKEC]
N- and P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTC6604N6-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N- and P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总12页 (文件大小：551K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 1/12
N- and P-Channel Enhancement Mode Power MOSFET
N-CH
20V
4.3A(VGS=4.5V)
29mΩ(VGS=4.5V)
P-CH
-20V
-3.8A(VGS=-4.5 V)
42mΩ(VGS=-4.5V)
MTC6604N6
BVDSS
ID
36mΩ(VGS=2.5V)
53mΩ(VGS=1.8V)
54mΩ(VGS=-2.5V)
64mΩ(VGS=-1.8V)
RDSON(TYP.)
Features
• Simple drive requirement
• Low gate charge
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTC6604N6
SOT-26
D2
S1
D1
G：Gate
G2
S：Source
D：Drain
S2
G1
Ordering Information
Device
Package
SOT-26
Shipping
MTC6604N6-0-T1-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 2/12
Absolute Maximum Ratings (Ta=25°C)
Limits
N-channel P-channel
Parameter
Symbol
Unit
Drain-Source Breakdown Voltage
Gate-Source Voltage
BVDSS
VGS
20
±8
-20
±8
V
A
4.3
3.4
25
-3.8
-3.0
-22
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2)
ID
IDM
PD
1.14
0.01
-55~+150
W
W / °C
°C
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec
2.Pulse width limited by maximum junction temperature
N-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
20
-
0.02
-
-
-
-
29
36
-
-
V
V/°C
V
VGS=0V, ID=250μA
-
0.5
-
-
-
Reference to 25°C, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0V
VDS=20V, VGS=0V
VDS=16V, VGS=0V, Tj=70°C
ID=3A, VGS=4.5V
1.0
±100
1
10
40
55
IGSS
nA
IDSS
μA
-
-
ID=2A, VGS=2.5V
*RDS(ON)
*GFS
mΩ
-
-
53
75
-
ID=1.5A, VGS=1.8V
VDS=5V, ID=3A
6.2
S
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
327
45
42
5
15
24.6
6.4
5.9
0.6
2.0
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=15V, VGS=0V, f=1MHz
VDS=10V, ID=3A, VGS=4.5V, RG=3.3
VDS=15V, ID=3A, VGS=4.5V
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Ω
nC
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
-
-
0.79
6.7
2.8
1.2
-
-
V
ns
nC
VGS=0V, IS=1A
IF=3A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 3/12
P-Channel Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
-20
-
-0.4
-
-
-
-
-
-
-
-
V
V/°C
V
VGS=0V, ID=-250μA
-0.01
Reference to 25°C, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-20V, VGS=0V
VDS=-16V, VGS=0V, Tj=70°C
ID=-3A, VGS=-4.5V
-
-
-
-
42
54
-1.0
±100
-1
-25
55
IGSS
nA
IDSS
μA
85
ID=-2A, VGS=-2.5V
*RDS(ON)
*GFS
mΩ
-
-
64
9
130
-
ID=-1A, VGS=-1.8V
VDS=-5V, ID=-3A
S
Dynamic
Ciss
-
-
-
-
-
-
-
-
-
-
658
72
61
9.2
18.8
48.4
12
9.9
1.2
2.7
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=-15V, VGS=0V, f=1MHz
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
Ω
VDS=-10V, ID=-3A, VGS=-4.5V, RG=3.3
VDS=-15V, ID=-3A, VGS=-4.5V
nC
*Qgs
*Qgd
Source-Drain Diode
*VSD
*trr
*Qrr
-
-
-
-0.79
7.1
2.7
-1
-
-
V
ns
nC
VGS=0V, IS=-1A
IF=-3A, VGS=0V, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Value
80
110 (Note )
Unit
°C/W
Note :.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 4/12
N-channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
25
7V, 6V, 5V, 4V, 3V
20
VGS=2.5V
15
VGS=2V
10
5
ID=250μA,
VGS=0V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
VDS, Drain-Source Voltage(V)
4
5
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1.0
0.8
0.6
0.4
0.2
VGS=0V
Tj=25°C
VGS=1.8V
VGS=2.5V
Tj=150°C
VGS=4.5V
1
0
1
2
3
4
5
0.01
0.1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=4.5V, ID=3A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
100
80
1.8
ID=3A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
60
40
RDS(ON)@Tj=25°C : 29mΩ typ.
20
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
V
3
4
5
6
GS, Gate-Source Voltage(V)
7
8
Tj, Junction Temperature(°C)
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 5/12
N-channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1000
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
ID=1mA
100
C
oss
ID=250μA
Crss
16
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
4
8
12
20
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
50
10
ID=3A
VDS=15V
TJ(MAX)=150°C
TA=25°C
40
30
20
10
0
8
6
4
2
0
θ
R
JA=110°C/W
0
2
4
6
8
10
12
14
0.001
0.01
0.1 1
Pulse Width(s)
10
100
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
6.0
5.0
4.0
3.0
2.0
1.0
0.0
RDS(ON)
Limited
100μs
10
1
1ms
10ms
100ms
0.1
0.01
TA=25°C, Tj=150°C,
JA
θ
VGS=4.5V, R =110°C/W
DC
JA
θ
TA=25°C, VGS=4.5V, R =110°C/W
Single Pulse
0.01
0.1
1
10
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
VDS, Drain-Source Voltage(V)
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 6/12
N-channel Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
VDS=5V
Typical Transfer Characteristics
10
1
25
VDS=5V
20
15
10
5
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0
0.001
0.01
0.1
ID, Drain Current(A)
1
10
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
0.05
1
2
2.Duty Factor, D=t /t
3.TJM-TA=PDM*ZθJA(t)
=11
0.02
0.01
4.RθJA
0°C/W
0.01
0.001
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 7/12
P-channel Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
7V
, 6V, 5V, 4V, 3V
16
12
8
-VGS=2.5V
-VGS=2V
μ
ID=-250 A,
4
VGS=0V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
1.2
Tj=25°C
VGS=0V
1.0
0.8
0.6
0.4
0.2
VGS=-1.8V
100
Tj=150°C
VGS=-2.5V
VGS=-4.5V
10
0
2
4
6
8
10
0.01
0.1
1
10
-ID, Drain Current(A)
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
300
250
200
150
100
50
1.6
ID=-3A
VGS=-4.5V, ID=-3A
1.4
1.2
1.0
0.8
0.6
0.4
RDS(ON)@Tj=25°C : 42mΩ typ.
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
6
7
8
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 8/12
P-channel Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1000
1.4
1.2
1.0
0.8
0.6
0.4
Ciss
ID=-1mA
C
oss
100
Crss
ID=-250μA
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
4
8
12
16
20
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
Gate Charge Characteristics
50
10
8
ID=-3A
40
30
20
10
0
TJ(MAX)=150°C
TA=25°C
VDS=-15V
θ
R
JA=110°C/W
6
4
2
0
0
4
8
12
16
20
24
0.001
0.01
0.1 1
Pulse Width(s)
10
100
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100μs
10
1
RDS(ON)
Limited
1ms
10ms
100ms
DC
TA=25°C, Tj=150°C,
JA
θ
VGS=-4.5V, R =110°C/W
0.1
0.01
JA
θ
TA=25°C, VGS=-4.5V, R =110°C/W
Single Pulse
0.01
0.1
1
10
100
25
50
75
100
Tj, Junction Temperature(°C)
125
150
175
-VDS, Drain-Source Voltage(V)
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 9/12
P-channel Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
VDS=-5V
Typical Transfer Characteristics
20
10
1
VDS=-5V
16
VDS=-10V
12
8
0.1
Pulsed
Ta=25°C
4
0.01
0
0.001
0.01
0.1
-ID, Drain Current(A)
1
10
0
1
2
3
4
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
0.1
1
2
2.Duty Factor, D=t /t
3.TJM-TA=PDM*ZθJA(t)
=110
0.05
4.RθJA
°C/W
0.02
0.01
0.01
Single Pulse
0.01
0.001
0.0001
0.001
0.1
1
10
100
1000
t1, Square Wave Pulse Duration(s)
Recommended Soldering Footprint
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 10/12
Reel Dimension
Carrier Tape Dimension
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 11/12
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTC6604N6
CYStek Product Specification
Spec. No. : C093N6
Issued Date : 2016.04.12
Revised Date :
CYStech Electronics Corp.
Page No. : 12/12
SOT-26 Dimension
Marking:
Device Name
Date Code
6604
□□□□
●
●
6-Lead SOT-26 Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Gate1 (G1)
Pin 2. Source2 (S2)
Pin 3. Gate2 (G2)
Pin 4. Drain2 (D2)
Pin 5. Source1 (S1)
Pin 6. Drain1 (D1)
Millimeters
DIM
Inches
Min.
Millimeters
Inches
Min.
0.059
0.104
DIM
Min.
Max.
Max.
0.049
0.004
0.045
0.020
0.008
0.119
Min.
1.500
2.650
Max.
1.700
2.950
Max.
0.067
0.116
A
A1
A2
b
1.050
0.000
1.050
0.300
0.100
2.820
1.250
0.100
1.150
0.500
0.200
3.020
0.041
0.000
0.041
0.012
0.004
0.111
E
E1
e
e1
L
0.950 (BSC)
0.037 (BSC)
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
c
D
θ
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTC6604N6
CYStek Product Specification
相关型号：
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