MTDP9933KQ8-0-T3-G [CYSTEKEC]
Dual P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTDP9933KQ8-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | Dual P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：416K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Dual P-Channel Enhancement Mode Power MOSFET
MTDP9933KQ8
Page No. : 1/9
BVDSS
ID@VGS=-4.5V, TA=25°C
-20V
-4.5A
-7.5A
ID@VGS=-4.5V, TC=25°C
Features
RDSON@VGS=-4.5V, ID=-4A
RDSON@VGS=-2.5V, ID=-4A
RDSON@VGS=-1.8V, ID=-2A
28 mΩ(typ)
36 mΩ(typ)
44 mΩ(typ)
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package
• ESD protected device
Equivalent Circuit
Outline
MTDP9933KQ8
SOP-8
G：Gate
S：Source
D：Drain
Ordering Information
Device
Package
SOP-8
Shipping
2500 pcs / tape & reel
MTDP9933KQ8-0-T3-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
10s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-20
±8
V
-7.5
-4.7
Continuous Drain Current @ TC=25°C, VGS=-4.5V (Note1)
Continuous Drain Current @ TC=100°C, VGS=-4.5V (Note1)
Continuous Drain Current @ TA=25°C, VGS=-4.5V (Note2)
Continuous Drain Current @ TA=70°C, VGS=-4.5V (Note2)
ID
A
-6.0
-4.8
-4.5
-3.6
IDSM
IDM
PD
Pulsed Drain Current
(Note3)
(Note1)
(Note1)
(Note2)
(Note2)
-40 *1,2
3.1
1.2
TC=25℃
TC=100℃
TA=25°C
TA=70°C
Total Power Dissipation
W
2.0
1.3
1.1
0.7
PDSM
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+150
°C
Thermal Data
Parameter
Symbol Typical Maximum
Unit
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient
Rth,j-c
34
58
91
40
62.5
110
t≤10s
Steady State
°C/W
Rth,j-a
(Note2)
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=150 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
Electrical Characteristics (Tc=25°C, unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
VGS=0V, ID=-250μA
VDS=VGS, ID=-250μA
VGS=±8V, VDS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0, Tj=55°C
ID=-4A, VGS=-4.5V
ID=-4A, VGS=-2.5V
ID=-2A, VGS=-1.8V
Static
BVDSS
VGS(th)
IGSS
IDSS
IDSS
-20
-0.3
-
-
-
-
-
28
36
44
-
V
-0.9
±10
-1
-
-
-
-
-
-
μA
-5
38
48
62
RDS(ON)
GFS
(Note 1)
(Note 1)
mΩ
-
30
-
S
VDS=-5V, ID=-3A
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
-
-
-
-
-
-
-
-
-
-
-
828
134
127
4.2
23.6
54.6
28.8
10.6
1.2
1242
201
191
6.3
35.4
81.9
43.2
15.9
-
pF
ns
VDS=-10V, VGS=0, f=1MHz
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
(Note 1&2)
VDS=-5V, ID=-0.5A, VGS=-4.5V,
Ω
RG=6
nC
VDS=-10V, ID=-3.8A, VGS=-4.5V
f=1MHz
Qgs
Qgd
Rg
3.9
5.8
-
-
Ω
Source-Drain Diode
IS
-
-
-
-
-
-
-
-1.7
-10
-1
-
A
ISM(Note 3)
VSD(Note 1)
trr
-0.76
22.3
4.4
V
ns
nC
IS=-1A, VGS=0V
IF=-1.3A, dIF/dt=100A/μs
Qrr
-
Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
2.Independent of operating temperature
3.Pulse width limited by maximum junction temperature
Recommended Soldering Footprint
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
40
35
30
-VGS=2.5V
10V,9V,8V,7V,6V,5V,4V,3V
-VGS=2V
25
20
15
10
5
0.8
0.6
0.4
μ
ID=-250 A,
VGS=0V
-VGS=1.5V
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
VGS=-1.8V
VGS=-2.5V
VGS=-3V
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
VGS=-4.5V
Tj=150°C
0
2
4
6
8
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=-4.5V, ID=-4A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
400
360
320
280
240
200
160
120
80
2
1.8
1.6
1.4
1.2
1
ID=-4A
0.8
0.6
0.4
0.2
RDS(ON)@Tj=25°C : 28mΩtyp.
40
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.6
1.4
1.2
1
Ciss
ID=-1mA
1000
0.8
0.6
0.4
0.2
0
C
oss
100
10
Crss
ID=-250uA
-75 -50 -25
0
25 50 75 100 125 150 175
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Gate Charge Characteristics
Maximum Safe Operating Area
5
4
3
2
1
0
100
10
100μs
RDSON
limited
1ms
10ms
100ms
1
1s
0.1
0.01
VDS=-10V
ID=-3.8A
TA=25°C, Tj=150°C
JA
DC
VGS=-4.5V, Rθ =62.5°C/W
Single Pulse
0
2
4
6
8
10
12
0.01
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
Qg, Total Gate Charge(nC)
Forward Transfer Admittance vs Drain Current
Maximum Drain Current vs Junction Temperature
100
10
8
7
6
5
4
3
2
1
0
1
VDS=-5V
Pulsed
Ta=25°C
0.1
JA
TA=25°C, VGS=-4.5V, Rθ =62.5°C/W
0.01
25
50
75
100
125
150
175
0.001
0.01
0.1
1
10
100
Tj, Junction Temperature(°C)
-ID, Drain Current(A)
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
40
300
250
200
150
100
50
TJ(MAX)=150°C
TA=25°C
VDS=-5V
35
θJA=62.5°C/W
30
25
20
15
10
5
0
0
0.001
0.01
0.1 1
Pulse Width(s)
10
100
0
1
2
3
-VGS, Gate-Source Voltage(V)
4
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JA
1.Rθ (t)=r(t)*Rθ
JA
0.1
2.Duty Factor, D=t1/t2
JA
3.TJM-TA=PDM*Rθ (t)
0.05
JA
4.Rθ =62.5°C/W
0.02
0.01
0.01
0.001
Single Pulse
1.E-02
1.E-04
1.E-03
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP9933KQ8
CYStek Product Specification
Spec. No. : C589Q8
Issued Date : 2015.02.24
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
SOP-8 Dimension
Marking:
Device Name
Date Code
DP
9933K
□□□□
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
*: Typical
Millimeters
Inches
DIM
Millimeters
Inches
DIM
Min.
Max.
Min.
Max.
5.10
4.00
6.20
Min.
Max.
Min.
Max.
1.75
5.10
0.25
1.27
0.25
1.55
A
B
C
D
E
F
0.1850
0.1496
0.2283
0.0500*
0.0130
0.1472
0.2007
0.1575
0.2441
4.70
3.80
5.80
G
H
I
J
K
L
0.0531
0.1889
0.0019
0.0157
0.0067
0.0531
0.0689
0.2007
0.0098
0.0500
0.0098
0.0610
1.35
4.80
0.05
0.40
0.17
1.35
1.27 *
0.0201
0.1527
0.33
3.74
0.51
3.88
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP9933KQ8
CYStek Product Specification
相关型号：
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