MTE020N03N3 [CYSTEKEC]
30V N-Channel Enhancement Mode MOSFET;
| 型号： | MTE020N03N3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | 30V N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：429K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 9
30V N-Channel Enhancement Mode MOSFET
BVDSS
ID @VGS=10V, TA=25°C
30V
6.5A
MTE020N03N3
VGS=10V, ID=5A
16.1mΩ
RDSON(TYP)
Features
• Low on-resistance
• Excellent thermal and electrical capabilities
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTE020N03N3
SOT-23
D
S
G：Gate
S：Source
D：Drain
G
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
MTE020N03N3-0-T1-G
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25°C)
Symbol
VDS
Parameter
Limits
30
±30
Unit
Drain-Source Voltage
Gate-Source Voltage
VGS
V
6.5
5.2
30
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current (Note 1, 2)
(Note 3)
(Note 3)
IDSM
IDM
TA=25°C
TA=125°C
1.38
0.9
Maximum Power Dissipation
PD
W
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
°C
Thermal Performance
Parameter
Symbol
Limit
90
Unit
Thermal Resistance, Junction-to-Ambient , max
(Note 3)
RθJA
RθJC
°C/W
Thermal Resistance, Junction-to-Case , max
50
Note: 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤300μs, duty cycle≤2%
3. Surface mounted on 1 in² copper pad of FR-4 board at steady state; 417°C/W when mounted on minimum copper
pad.
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
30
-
2
-
-
20
-
7
-
-
4
-
V
VGS=0V, ID=250μA
ΔBVDSS/ΔTj
VGS(th)
GFS
mV/℃ Reference to 25℃, ID=250μA
V
S
VDS=VGS, ID=250μA
VDS=5V, ID=3A
±
±
IGSS
-
-
-
-
-
-
-
100
1
nA
VGS= 30V, VDS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V, Tj=85°C
VGS=10V, ID=5A
IDSS
μA
25
22
*RDS(ON)
16.1
mΩ
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Rg
-
-
-
-
-
-
-
-
-
-
-
431
75
59
-
-
-
-
-
-
-
-
-
-
-
pF
ns
VDS=20V, VGS=0V, f=1MHz
8.6
14.2
18.4
6.8
9.6
2.3
3.0
7.2
Ω
VDS=15V, ID=5A, VGS=10V, RG=1
nC
VDS=15V, ID=5A, VGS=10V
f=1MHz
Ω
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 9
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
5
30
1.2
-
A
-
-
-
0.79
7.6
2.9
V
ns
nC
VGS=0V, IS=1.5A
IF=1.5A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
30
25
20
15
10
5
10V, 9V, 8V,7V,6V
5.5V
5V
0.8
0.6
4.5V
μ
ID=250 A,
VGS=0V
VGS=4V
0
-75 -50 -25
0
25
50 75 100 125 150 175
0
1
2
3
VDS, Drain-Source Voltage(V)
4
5
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
VGS=0V
Tj=25°C
1
0.8
0.6
0.4
0.2
VGS=4.5V
VGS=6V
7V
Tj=150°C
10V
0
4
8
12
16
20
0.01
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
RDSON@VGS=10V, ID=5A : 16.1mΩ typ
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
80
60
40
20
0
2
1.8
1.6
1.4
1.2
1
ID=5A
0.8
0.6
0.4
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1000
1.4
1.2
1
ID=1mA
Ciss
0.8
0.6
0.4
0.2
C
oss
100
μ
ID=250 A
Crss
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
10
8
6
4
2
0
VDS=15V
1
0.1
VDS=25V
VDS=10V
Pulsed
Ta=25°C
ID=5A
0.01
0
2
4
6
8
10
12
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
Maximum Drain Current vs JunctionTemperature
100
8
7
6
5
4
3
2
1
0
RDS(ON)
Limited
10
1
100μs
1ms
10ms
100ms
DC
0.1
0.01
TA=25°C, Tj=150°C,VGS=10V
θJA
R
=90°C/W, Single Pulse
θ
TA=25°C, VGS=10V, R JA=90°C/W
0.01
0.1
1
10
100
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
VDS, Drain-Source Voltage(V)
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 9
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
VDS=5V
TJ(MAX)=150°C
TA=25°C
θ
R
JA=90°C/W
0
0
0
1
2
3
4
5
6
7
GS, Gate-Source Voltage(V)
8
9
10
0.0001
0.001
0.01
0.1
Pulse Width(s)
1
10
100
V
Transient Thermal Response Curves
1
D=0.5
JA
1.Rθ (t)=r(t)*Rθ
JA
0.2
0.1
1
2.Duty Factor, D=t /t
2
JM
A
DM
3.T -T =P *Rθ (t)
JA
0.1
=9
JA
4.Rθ
0°C/W
0.05
0.02
0.01
Single Pulse
0.01
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
t1, Square Wave Pulse Duration(s)
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE020N03N3
CYStek Product Specification
Spec. No. : C737N3
Issued Date : 2017.08.22
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 9
SOT-23 Dimension
Marking:
Date Code
A
L
3
Device Code
EW3N
S
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
V
G
Style: Pin 1.Gate 2.Source 3.Drain
C
D
K
H
J
*: Typical
DIM
Inches
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
2.70
1.20
0.89
0.30
1.70
0.00
Max.
3.10
1.60
1.30
0.50
2.30
0.10
Min.
Max.
Min.
0.085
0.32
0.85
2.10
0.25
Max.
0.20
0.67
1.15
2.95
0.65
A
B
C
D
G
H
0.1063 0.1220
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
J
K
L
S
V
0.0034
0.0128
0.0335
0.0830
0.0098
0.0079
0.0266
0.0453
0.1161
0.0256
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE020N03N3
CYStek Product Specification
相关型号：
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