MTE130N20J3 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;


型号：	MTE130N20J3
厂家：	CYSTECH ELECTONICS CORP.
描述：	N-Channel Enhancement Mode Power MOSFET
文件：	总9页 (文件大小：414K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 1/9

N-Channel Enhancement Mode Power MOSFET

BVDSS

200V

18A

MTE130N20J3

ID@VGS=10V, TC=25°C

ID@VGS=10V, TA=25°C

RDSON(TYP) @ VGS=10V, ID=9A

1.9A

156mΩ

Features

• Low Gate Charge

• Simple Drive Requirement

• Fast Switching Characteristic

• Pb-free lead plating and halogen-free package

Symbol

Outline

TO-252(DPAK)

MTE130N20J3

D S

G：Gate D：Drain S：Source

Ordering Information

Device

Package

TO-252

Shipping

2500 pcs / Tape & Reel

MTE130N20J3-0-T3-G

(Pb-free lead plating and halogen-free package)

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and

green compound products

Packing spec, T3 : 2500 pcs / tape & reel, 13” reel

Product rank, zero for no rank products

Product name

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 2/9

Absolute Maximum Ratings (TC=25°C, unless otherwise noted)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

200

±20

1.9

1.5

Continuous Drain Current @ TC=25°C

Continuous Drain Current @ TC=100°C

Pulsed Drain Current

Continuous Drain Current @ TA=25°C

Continuous Drain Current @ TA=70°C

Avalanche Current

(Note 1)

(Note 3)

(Note 4)

(Note 3)

IDM

IDSM

IAS

Avalanche Energy @ L=1mH, ID=3A, VDD=50V

(Note 3)

EAS

4.5

TC=25°C

TC=100°C

(Note 1)

(Note 2)

125

62.5

Power Dissipation

TA=25°C

Power Dissipation

PDSM

TA=70°C

1.3

Operating Junction and Storage Temperature

Tj, Tstg

-55~+175

°C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max, t≤10s (Note 2)

Thermal Resistance, Junction-to-ambient, max

Symbol

Rth,j-c

Value

1.2

62.5

Unit

°C/W

Rth,j-a

(Note 4)

Note : 1 The power dissipation P_Dis based on T_J(MAX)=175 C, using junction-to-case thermal resistance, and is more useful

in setting the upper dissipation limit for cases where additional heatsinking is used.

2 The value of R_θJAis measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air

environment with T_A=25 C. The power dissipation P_DSMis based on R_θJAand the maximum allowed junction

temperature of 150°C. The value in any given application depends on the user’s specific board design.

3 Repetitive rating, pulse width limited by junction temperature T_J(MAX)=175 C. Ratings are based on low frequency

and low duty cycles to keep initial TJ=25°C.

4. When mounted on the minimum pad size recommended (PCB mount), t≤10s.

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 3/9

Characteristics (TC=25°C, unless otherwise specified)

Symbol

Static

Min.

Typ.

Max.

Unit

Test Conditions

BV_DSS

∆BV_DSS/∆Tj

V_GS(th)

200

0.2

4.0

100

V/°C

V_GS=0V, I_D=250μA

2.0

Reference to 25°C, I_D=250μA

V_DS= V_GS, I_D=250μA

V_DS=10V, I_D=9A

G_FS

I_GSS

V_GS= 20V

V_DS=180V, V_GS=0V

V_DS=180V, V_GS=0V, Tj=125°C

V_GS=10V, I_D=9A

I_DSS

μA

*R_DS(ON)

Dynamic

*Qg

156

195

7.2

12.6

27.6

14.6

813

V_DS=160V, I_D=18A, V_GS=10V

V_DS=100V, I_D=18A, V_GS=10V, R_G=6

V_GS=0V, V_DS=25V, f=1MHz

*Qgs

*Qgd

*t_d(ON)

*tr

*t_d(OFF)

*t_f

Ciss

Coss

Crss

Source-Drain Diode

*I_S

*I_SM

*V_SD

*trr

1.2

0.86

245

I_S=18A, V_GS=0V

I_F=18A, V_GS=0, dI_F/dt=100A/μs

*Qrr

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Recommended soldering footprint

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 4/9

Typical Characteristics

Brekdown Voltage vs Ambient Temperature

Typical Output Characteristics

1.4

1.2

10V, 9V, 8V, 7V

V_GS=6V

0.8

0.6

0.4

V_GS=5V

I_D=250 A,

V_GS=0V

V_GS=4.5V

-75 -50 -25

0 25 50 75 100 125 150 175 200

Tj, Junction Temperature(°C)

_DS, Drain-Source Voltage(V)

Static Drain-Source On-State resistance vs Drain Current

V_GS=4.5V

Reverse Drain Current vs Source-Drain Voltage

1000

100

1.2

0.8

0.6

0.4

0.2

Tj=25°C

Tj=150°C

V_GS=6V

V_GS=10V

0.01

0.1

100

I_D, Drain Current(A)

I_DR, Reverse Drain Current(A)

Drain-Source On-State Resistance vs Junction Tempearture

V_GS=10V, I_D=9A

Static Drain-Source On-State Resistance vs Gate-Source

Voltage

600

500

400

300

200

100

2.5

I_D=9A

1.5

0.5

R_DS(ON)@Tj=25°C :156mΩ typ

-75 -50 -25

25 50 75 100 125 150 175 200

V_GS, Gate-Source Voltage(V)

Tj, Junction Temperature(°C)

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 5/9

Typical Characteristics(Cont.)

NormalizedThreshold Voltage vs Junction Tempearture

Capacitance vs Drain-to-Source Voltage

10000

1.4

1.2

I_D=1mA

Ciss

1000

oss

0.8

0.6

0.4

100

I_D=250μA

Crss

-75 -50 -25

25 50 75 100 125 150 175

0.1

_DS, Drain-Source Voltage(V)

100

Tj, Junction Temperature(°C)

Forward Transfer Admittance vs Drain Current

Gate Charge Characteristics

100

V_DS=100V

V_DS=40V

V_DS=160V

V_DS=10V

Pulsed

0.1

0.01

Ta=25°C

I_D=18A

0.001

0.01

0.1

100

I_D, Drain Current(A)

Total Gate Charge---Qg(nC)

Maximum Drain Current vs Case Temperature

Maximum Safe Operating Area

100

μs

100

R_DS(ON)

Limit

1ms

10ms

100ms

T_C=25°C, Tj=175°, V_GS=10V

θJC

V_GS=10V, R_θ=1.2°C/W

=1.2°C/W, Single Pulse

0.1

100

125

150 175

200

0.1

100

1000

V_DS, Drain-Source Voltage(V)

T_C, Case Temperature(°C)

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 6/9

Typical Characteristics(Cont.)

Typical Transfer Characteristics

Single Pulse Maximum Power Dissipation

3000

2500

2000

1500

1000

500

V_DS=10V

T_J(MAX)=175°C

T_C=25°C

_JC=1.2°C/W

0.001

0.01

0.1

Pulse Width(s)

V_GS, Gate-Source Voltage(V)

Transient Thermal Response Curves

D=0.5

0.2

θJC

1.R _JC(t)=r(t)*R

2.Duty Factor, D=t /t

3.T^JM-T^C=P^DM*R_θ^JC(t)

0.1

0.05

_θJC=1.2 C/W

4.R

0.02

0.01

Single Pulse

1.E-03

0.001

1.E-05

1.E-04

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

t₁, Square Wave Pulse Duration(s)

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 7/9

Reel Dimension

Carrier Tape Dimension

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 8/9

Recommended wave soldering condition

Product

Peak Temperature

Soldering Time

5 +1/-1 seconds

Pb-free devices

260 +0/-5 °C

Recommended temperature profile for IR reflow

Profile feature

Average ramp-up rate

(Tsmax to Tp)

Sn-Pb eutectic Assembly

Pb-free Assembly

3°C/second max.

Preheat

−Temperature Min(T^Smin)

−Temperature Max(TS max)

−Time(ts min to ts max)

Time maintained above:

−Temperature (TL)

− Time (tL)

100°C

150°C

200°C

60-120 seconds

60-180 seconds

183°C

60-150 seconds

217°C

60-150 seconds

Peak Temperature(TP)

240 +0/-5 °C

260 +0/-5 °C

Time within 5°C of actual peak

temperature(tp)

10-30 seconds

20-40 seconds

Ramp down rate

6°C/second max.

6 minutes max.

8 minutes max.

Time 25 °C to peak temperature

Note : All temperatures refer to topside of the package, measured on the package body surface.

MTE130N20J3

CYStek Product Specification

Spec. No. : C966J3

Issued Date : 2014.12.23

Revised Date :

CYStech Electronics Corp.

Page No. : 9/9

TO-252 Dimension

Marking:

Device

Name

E130

N20

Date

Code

□□□□

3-Lead TO-252 Plastic Surface Mount Package

CYStek Package Code: J3

Style: Pin 1.Gate 2.Drain 3.Source

4.Drain

Inches

Min.

Millimeters

Inches

Millimeters

DIM

Max.

0.094

0.005

0.048

0.034

0.023

0.264

0.215

0.244

Min.

Max.

2.400

0.127

1.210

0.860

0.580

6.700

5.460

6.200

Min.

0.086

0.172

Max.

0.094

0.188

Min.

2.186

4.372

Max.

2.386

4.772

0.087

0.000

0.039

0.026

0.018

0.256

0.201

0.236

2.200

0.000

0.990

0.660

0.460

6.500

5.100

6.000

0.163 REF

0.190 REF

0.386 0.409

0.114 REF

4.140 REF

4.830 REF

9.800 10.400

2.900 REF

0.055

0.024

0.067

0.039

1.400

0.600

1.700

1.000

0.026 REF

0.211 REF

0.650 REF

5.350 REF

Notes: 1.Controlling dimension: millimeters.

2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:

• Lead : Pure tin plated.

• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.

• CYStek reserves the right to make changes to its products without notice.

• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

MTE130N20J3

CYStek Product Specification

MTE130N20J3 [CYSTEKEC]

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