MTE1D5N04H8 [CYSTEKEC]

N-Channel Enhancement Mode Power MOSFET;
MTE1D5N04H8
型号: MTE1D5N04H8
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

N-Channel Enhancement Mode Power MOSFET

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中文:  中文翻译
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Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 1/10  
N-Channel Enhancement Mode Power MOSFET  
BVDSS  
ID@VGS=10V, TC=25°C  
40V  
148A  
23A  
MTE1D5N04H8  
ID@VGS=10V, TA=25°C  
RDS(ON)@VGS=10V, ID=100A  
1.5mΩ(typ)  
Features  
Low On Resistance  
Simple Drive Requirement  
Low Gate Charge  
Fast Switching Characteristic  
Pb-free lead plating and Halogen-free package  
Symbol  
Outline  
DFN5×6  
MTE1D5N04H8  
Pin 1  
D
D
D
D
D
D
D
G
D
S
S
S
S
S
S
G
GGate DDrain SSource  
Pin 1  
Ordering Information  
Device  
Package  
Shipping  
DFN 5 ×6  
MTE1D5N04H8-0-T6-G  
3000 pcs / tape & reel  
(Pb-free lead plating and halogen-free package)  
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant  
and green compound products  
Packing spec, T6 : 3000 pcs / tape & reel,13” reel  
Product rank, zero for no rank products  
Product name  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 2/10  
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)  
Parameter  
Symbol  
Limits  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
(Note 1)  
VDS  
VGS  
40  
±20  
148  
104  
23  
18.4  
446  
100  
V
Continuous Drain Current @TC=25°C, VGS=10V  
Continuous Drain Current @TC=100°C, VGS=10V  
Continuous Drain Current @TA=25°C, VGS=10V  
Continuous Drain Current @TA=70°C, VGS=10V  
Pulsed Drain Current @ VGS=10V  
(Note 5)  
(Note 5)  
(Note 2)  
(Note 2)  
(Note 3)  
(Note 3)  
ID  
IDSM  
A
IDM  
IAS  
Avalanche Current @L=0.1mH  
Single Pulse Avalanche Energy @ L=1mH, ID=52Amps, VDD=30V  
EAS  
EAR  
1352  
(Note 4)  
mJ  
Repetitive Avalanche Energy  
(Note 3)  
(Note 1)  
(Note 1)  
(Note 2)  
(Note 2)  
12.5  
125  
62.5  
2.5  
TC=25°C  
TC=100°C  
TA=25°C  
TA=70°C  
PD  
Power Dissipation  
W
PDSM  
1.6  
Operating Junction and Storage Temperature  
*Drain current limited by maximum junction temperature  
Tj, Tstg -55~+175  
°C  
Thermal Data  
Parameter  
Thermal Resistance, Junction-to-case, max  
Thermal Resistance, Junction-to-ambient, max (Note 2)  
Symbol  
RθJC  
RθJA  
Value  
1.2  
50  
Unit  
°C/W  
°
Note : 1.The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful  
in setting the upper dissipation limit for cases where additional heatsinking is used.  
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air  
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The  
power dissipation PDSM is based on RθJAand the maximum allowed junction temperature of 150°C, and the maximum  
temperature of 175°C may be used if the PCB allows it.  
3. Pulse width limited by junction temperature TJ(MAX)=175°C.  
°
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C. 100% tested by conditions of VDD=25V,  
ID=50A, L=0.1mH, VGS=10V.  
5. Calculated continuous drain current based on maximum allowable junction temperature.  
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.  
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.  
.
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 3/10  
Characteristics (Tj=25°C, unless otherwise specified)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
Static  
BVDSS  
BVDSS/Tj  
VGS(th)  
40  
-
2
-
-
-
-
4
-
V
V/°C  
V
VGS=0V, ID=250μA  
0.025  
Reference to 25°C, ID=250μA  
VDS = VGS, ID=250μA  
VDS =10V, ID=20A  
-
*GFS  
27.9  
S
nA  
±
±
IGSS  
-
-
-
-
-
-
-
100  
1
5
VGS= 20V, VDS=VGS  
VDS =40V, VGS =0V  
VDS =32V, VGS =0V, Tj=55°C  
VGS =10V, ID=100A  
IDSS  
μA  
Ω
m
*RDS(ON)  
1.5  
2
Dynamic  
*Qg  
*Qgs  
*Qgd  
*td(ON)  
*tr  
*td(OFF)  
*tf  
Ciss  
-
-
-
-
-
-
-
-
-
-
-
109.1  
14.7  
28.5  
39.8  
28.6  
73.2  
25.2  
5718  
782  
-
-
-
-
-
-
-
-
-
-
-
nC  
VDS=20V, ID=100A, VGS=10V  
Ω
ns  
VDS=20V, ID=20A, VGS=10V, RG=2.7  
pF  
VGS=0V, VDS=20V, f=1MHz  
f=1MHz  
Coss  
Crss  
Rg  
415  
1
Ω
Source-Drain Diode  
*IS  
*ISM  
*VSD  
*trr  
-
-
-
-
-
-
-
148  
446  
1.3  
-
A
0.88  
19  
10  
V
ns  
nC  
IS=100A, VGS=0V  
VGS=0, IF=50A, dIF/dt=100A/μs  
*Qrr  
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 4/10  
Typical Characteristics  
Brekdown Voltage vs Ambient Temperature  
Typical Output Characteristics  
1.4  
1.2  
1
300  
250  
200  
150  
100  
50  
10V, 9V, 8V, 7V,6.5V  
6V  
5.5V  
0.8  
0.6  
0.4  
5V  
I =250 A,  
μ
D
VGS=4.5V  
VGS=0V  
0
0
1
2
3
4
5
-75 -50 -25  
0 25 50 75 100 125 150 175 200  
Tj, Junction Temperature(°C)  
V
DS, Drain-Source Voltage(V)  
Static Drain-Source On-State resistance vs Drain Current  
Reverse Drain Current vs Source-Drain Voltage  
100  
10  
1
1.2  
1
0.8  
0.6  
0.4  
0.2  
VGS=6V  
7V  
10V  
Tj=25°C  
Tj=150°C  
0.01  
0.1  
1
10  
100  
0
10  
20  
30  
40  
50  
ID, Drain Current(A)  
IDR, Reverse Drain Current(A)  
Drain-Source On-State Resistance vs Junction Tempearture  
Static Drain-Source On-State Resistance vs Gate-Source  
Voltage  
5
4
3
2
1
0
3.2  
2.8  
2.4  
2
VGS=10V, ID=100A  
ID=100A  
1.6  
1.2  
0.8  
0.4  
0
ID=50A  
RDS(ON)@Tj=25°C :1.5mΩ typ.  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
0
2
4
6
8
10  
VGS, Gate-Source Voltage(V)  
Tj, Junction Temperature(°C)  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 5/10  
Typical Characteristics(Cont.)  
Threshold Voltage vs Junction Tempearture  
Capacitance vs Drain-to-Source Voltage  
10000  
1.4  
1.2  
1
Ciss  
ID=1mA  
C
oss  
0.8  
0.6  
0.4  
0.2  
1000  
ID=250μA  
Crss  
100  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
0
5
10  
15  
20  
25  
30  
VDS, Drain-Source Voltage(V)  
Tj, Junction Temperature(°C)  
Forward Transfer Admittance vs Drain Current  
Gate Charge Characteristics  
100  
10  
8
10  
1
6
4
VDS=10V  
Pulsed  
0.1  
0.01  
VDS=20V  
2
Ta=25°C  
ID=100A  
0
0
20  
40  
60  
80  
100  
120  
140  
0.001  
0.01  
0.1  
1
10  
100  
ID, Drain Current(A)  
Total Gate Charge---Qg(nC)  
Maximum Drain Current vs Case Temperature  
Maximum Safe Operating Area  
180  
1000  
RDS(ON)  
Limited  
160  
140  
120  
100  
80  
100  
10  
1
100 s  
μ
1ms  
10ms  
DC  
60  
TC=25°C, Tj=175°C,  
JC  
40  
VGS=10V, R =1.2°C/W  
θ
JC  
VGS=10V, Rθ =1.2°C/W  
20  
Single Pulse  
0
0.1  
25  
50  
75  
100 125 150 175 200  
0.1  
1
10  
100  
V
DS, Drain-Source Voltage(V)  
TC, Case Temperature(°C)  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 6/10  
Typical Characteristics(Cont.)  
Typical Transfer Characteristics  
Single Pulse Maximum Power Dissipation  
300  
270  
240  
210  
180  
150  
120  
90  
3000  
2500  
2000  
1500  
1000  
500  
VDS=10V  
TJ(MAX)=175°C  
TC=25°C  
RθJC=1.2°C/W  
60  
30  
0
0
0.0001  
0.001  
0.01  
0.1  
1
10  
0
2
V
4
6
GS, Gate-Source Voltage(V)  
8
Pulse Width(s)  
Transient Thermal Response Curves  
1
D=0.5  
0.2  
JC  
JC  
1.Rθ (t)=r(t)*Rθ  
1
2
2.Duty Factor, D=t /t  
JM  
C
DM  
JC  
3.T -T =P *Rθ (t)  
0.1  
JC  
4.Rθ =1.2 °C/W  
0.05  
0.1  
Single Pulse  
0.02  
0.01  
1.E-04  
1.E-03  
1.E-02  
1.E-01  
1.E+00  
1.E+01  
t1, Square Wave Pulse Duration(s)  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 7/10  
Recommended Soldering Footprint & Stencil Design  
unit : mm  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 8/10  
Reel Dimension  
Carrier Tape Dimension  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 9/10  
Recommended wave soldering condition  
Product  
Peak Temperature  
Soldering Time  
5 +1/-1 seconds  
Pb-free devices  
260 +0/-5 °C  
Recommended temperature profile for IR reflow  
Profile feature  
Average ramp-up rate  
(Tsmax to Tp)  
Sn-Pb eutectic Assembly  
Pb-free Assembly  
3°C/second max.  
3°C/second max.  
Preheat  
Temperature Min(TS min)  
Temperature Max(TS max)  
Time(ts min to ts max)  
100°C  
150°C  
60-120 seconds  
150°C  
200°C  
60-180 seconds  
Time maintained above:  
Temperature (TL)  
Time (tL)  
183°C  
60-150 seconds  
240 +0/-5 °C  
217°C  
60-150 seconds  
260 +0/-5 °C  
Peak Temperature(TP)  
Time within 5°C of actual peak  
temperature(tp)  
10-30 seconds  
20-40 seconds  
Ramp down rate  
Time 25 °C to peak temperature  
6°C/second max.  
6°C/second max.  
6 minutes max.  
8 minutes max.  
Note :1. All temperatures refer to topside of the package, measured on the package body surface.  
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care  
should be taken to match the coefficients of thermal expansion between components and PCB. If they are  
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly  
cools.  
MTE1D5N04H8  
CYStek Product Specification  
Spec. No. : C054H8  
Issued Date : 2017.07.20  
Revised Date :  
CYStech Electronics Corp.  
Page No. : 10/10  
DFN5×6 Dimension  
Marking:  
E1D5  
N04  
Device Name  
Date Code  
8-Lead DFN5×6 Plastic Package  
CYS Package Code : H8  
Millimeters  
DIM  
Inches  
Min.  
Millimeters  
Inches  
DIM  
Min.  
0.90  
0.00  
0.33  
0.20  
4.80  
3.61  
5.90  
5.70  
Max.  
Max.  
0.043  
0.002  
0.020  
0.012  
0.197  
0.156  
Min.  
3.38  
Max.  
3.78  
Min.  
Max.  
A
A1  
b
1.10  
0.05  
0.51  
0.30  
5.00  
3.96  
6.10  
5.80  
0.035  
0.000  
0.013  
0.008  
0.189  
0.142  
E2  
e
H
K
L
L1  
θ
0.133  
0.149  
1.27 BSC  
0.050 BSC  
0.41  
1.10  
0.51  
0.06  
8°  
0.61  
-
0.71  
0.20  
12°  
0.016  
0.043  
0.020  
0.002  
8°  
0.024  
-
0.028  
0.008  
12°  
C
D1  
D2  
E
0.232  
0.224  
0.240  
0.228  
E1  
Notes: 1.Controlling dimension: millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material:  
Lead: Pure tin plated.  
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTE1D5N04H8  
CYStek Product Specification  

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