MTE3D0N04J3-0-T3-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTE3D0N04J3-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：664K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 9
N-Channel Enhancement Mode Power MOSFET
MTE3D0N04J3
BVDSS
40V
96.6A(silicon limit)
56A(package limit)
2.8 mΩ(typ)
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=20A
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Pb-free lead plating and halogen-free package
Symbol
Outline
TO-252(DPAK)
MTE3D0N04J3
G
D S
G：Gate D：Drain S：Source
Ordering Information
Shipping
Device
Package
TO-252
(Pb-free lead plating and halogen-free package)
MTE3D0N04J3-0-T3-G
2500 pcs / tape& reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 9
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @TC=25C, VGS=10V(silicon limit) (Note 5)
Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 5)
Continuous Drain Current @TC=25C, VGS=10V(package limit) (Note 5)
VDS
VGS
40
±20
96.6
68.3
56
V
ID
18.4
14.7
386
90
A
Continuous Drain Current @TA=25C, VGS=10V
Continuous Drain Current @TA=70C, VGS=10V
Pulsed Drain Current @ VGS=10V
(Note 2)
(Note 2)
(Note 3)
IDSM
IDM
IAS
Avalanche Current @ L=0.1mH
Single Pulse Avalanche Energy @ L=1mH, ID=40A, VDD=25V (Note 4)
EAS
800
100
50
2.5
1.6
mJ
W
TC=25C
TC=100C
TA=25C
TA=70C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
PD
Power Dissipation
PDSM
Operating Junction and Storage Temperature
Stress exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device
functionality should not be assumed, damage may occur and reliability may be affected.
Tj, Tstg -55~+175
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
1.5
50
Unit
C/W
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
°
temperature of 150 C.
°
.
3 Pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency and low duty cycles
°
to keep initial TJ=25 C.
4. 100% tested by conditions of L=0.1mH, VGS=10V, IAS=50A, VDD=25V
5. Calculated continuous current based on maximum allowable junction temperature. Guaranteed by design, not subject to 100%
production test. Current is limited to 56A by source bond technology.
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 9
Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
∆BVDSS/∆Tj
VGS(th)
40
-
2
-
-
-
-
4
-
V
V/C
V
VGS=0V, ID=250μA
0.03
-
22.4
Reference to 25C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=10A
*GFS
S
nA
±
±
IGSS
-
-
-
-
-
-
-
100
1
VGS= 20V, VDS=0V
VDS =32V, VGS =0V
VDS =32V, VGS =0V, Tj=85C
VGS =10V, ID=20A
IDSS
μA
10
3.7
Ω
m
*RDS(ON)
Dynamic
*Qg
2.8
-
-
-
-
-
-
-
-
-
-
-
73.8
17.3
19.4
27.8
10.8
57
110
35
39
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
nC
VDD=20V, ID=20A,VGS=10V
-
-
-
Ω
ns
VDD=20V, ID=20A, VGS=10V, RG=2.7
13
-
4044
568
330
1.1
5258
738
429
-
pF
VGS=0V, VDS=25V, f=1MHz
f=1MHz
Ω
Source-Drain Diode
*IS
*VSD
*trr
-
-
-
-
-
86
1.2
-
A
V
ns
nC
0.79
23.1
15.0
IS=20A, VGS=0V
VGS=0, IF=20A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Recommended soldering footprint
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
200
160
120
80
10V,9V,8V,7V,6V
5V
0.8
0.6
0.4
4.5V
ID=250μA,
40
VGS=0V
VGS=4V
4
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
1
2
3
5
Tj, Junction Temperature(°C)
VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
VGS=4.5V
Reverse Drain Current vs Source-Drain Voltage
10
9
8
7
6
5
4
3
2
1
0
1.2
VGS=0V
1.0
0.8
0.6
0.4
0.2
Tj=25°C
VGS=6V
7V
10V
Tj=150°C
0
4
8
12
16
20
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
3.2
ID=20A
VGS=10V, ID=20A
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
RDS(ON)@Tj=25°C : 2.8mΩ typ.
15
10
5
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
Ciss
ID=1mA
0.8
0.6
0.4
0.2
1000
Coss
ID=250μA
Crss
100
-65 -35 -5
25 55 85 115 145 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
8
VDS=5V
6
VDS=10V
1
4
VDS=20V
ID=20A
0.1
0.01
Ta=25°C
Pulsed
2
0
0
10 20 30 40 50 60 70 80 90 100
Qg, Total Gate Charge(nC)
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
120
1000
RDSON
100μs
Limited
silicon limit
100
80
60
40
20
0
100
10
1
1ms
10ms
100ms
1s
package limit
DC
TC=25°C, Tj=175°C
VGS=10V, RθJC=1.5°C/W
Single Pulse
VGS=10V, RθJC=1.5°C/W
0.1
25
50
75
100 125 150 175 200
0.1
1
10
100
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
300
3000
2700
2400
2100
1800
1500
1200
900
VDS=10V
250
TJ(MAX)=175°C
TC=25°C
RθJC=1.5°C/W
200
150
100
50
600
300
0
0
0.001
0.01
0.1 1
Pulse Width(s)
10
100
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
1.RθJC(t)=r(t)*RθJC
0.05
0.02
0.01
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
4.RθJC=1.5°C/W
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Typical Transfer Characteristics
20
18
16
14
12
10
8
VDS=10V
25°C
125°C
-40°C
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage(V)
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTE3D0N04J3
CYStek Product Specification
Spec. No. : C014J3
Issued Date : 2019.01.02
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 9
TO-252 Dimension
Marking:
4
Device
Name
E3D0
N04
□□□□
Date
Code
2
3
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Inches
Min.
Millimeters
Inches
Millimeters
DIM
DIM
Max.
0.094
0.005
0.048
0.034
0.034
0.023
0.023
0.264
0.215
0.244
Min.
Max.
2.400
0.127
1.210
0.860
0.860
0.580
0.580
6.700
5.460
6.200
Min.
0.086
0.172
Max.
0.094
0.188
Min.
2.186
4.372
Max.
2.386
4.772
A
A1
B
b
b1
C
C1
D
D1
E
0.087
0.000
0.039
0.026
0.026
0.018
0.018
0.256
0.201
0.236
2.200
0.000
0.990
0.660
0.660
0.460
0.460
6.500
5.100
6.000
e
e1
H
K
L
L1
L2
L3
P
0.163 REF
0.190 REF
0.386 0.409
0.114 REF
4.140 REF
4.830 REF
9.800 10.400
2.900 REF
0.055
0.024
0.067
0.039
1.400
0.600
1.700
1.000
0.026 REF
0.211 REF
0.650 REF
5.350 REF
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead : Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE3D0N04J3
CYStek Product Specification
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