MTN10N60BE3-0-UB-X [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTN10N60BE3-0-UB-X |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 10
N-Channel Enhancement Mode Power MOSFET
BVDSS
600V
10A
MTN10N60BE3
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=6A
0.59Ω
Description
The MTN10N60BE3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
Applications
• Power Factor Correction
• LCD TV Power
• Full and Half Bridge Power
Ordering Information
Device
Package
Shipping
TO-220
(RoHS compliant package)
MTN10N60BE3-0-UB-X
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 10
Symbol
Outline
TO-220
MTN10N60BE3
G D S
G：Gate D：Drain S：Source
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current (Note 2)
VDS
VGS
600
±30
10
6.3
40
V
A
ID
IDM
EAS
EAR
Single Pulse Avalanche Energy @ L=5mH, ID=10 Amps, VDD=50V
250
5
(Note 3)
mJ
Repetitive Avalanche Energy
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
TL
300
°C
TPKG
260
Pd
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
W
W/°C
°C
185
1.48
Tj, Tstg -55~+150
*Drain current limited by maximum junction temperature
℃
℃
.
.
Note : 1 TJ=+25 to +150
.
2 Repetitive rating; pulse width limited by maximum junction temperature.
3. 100% tested by conditions of L=5mH, IAS=5A, VGS=10V, VDD=50V
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 10
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
0.68
62.5
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
*GFS
600
-
-
-
4.0
-
V
V/°C
V
VGS=0V, ID=250μA
-
2.0
-
0.65
-
10.9
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =15V, ID=5A
S
nA
±
±
IGSS
IDSS
IDSS
-
-
-
-
-
-
100
1
VGS= 30V
VDS =600V, VGS =0V
VDS =480V, VGS =0V, Tj=125°C
μA
10
Ω
*RDS(ON)
Dynamic
*Qg
-
0.59
0.75
VGS =10V, ID=6A
-
-
-
-
-
-
-
-
-
-
43.4
8.5
18
19.4
14.4
75.8
18
1599
159
26
-
-
-
-
-
-
-
-
-
-
nC
ns
ID=10A, VDD=300V, VGS=10V
VDD=300V, ID=10A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Ω
RG=9.1
pF
VGS=0V, VDS=25V, f=1MHz
IS=10A, VGS=0V
Source-Drain Diode
*VSD
*IS
*ISM
*trr
-
-
-
-
-
-
-
-
1.5
10
40
636
4.8
V
A
424
3.2
ns
μC
VGS=0V, IF=10A, dIF/dt=100A/μs
*Qrr
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 10
Typical Characteristics
Static Drain-Source On-resistance vs Ambient Temperature
Typical Output Characteristics
3.0
2.5
2.0
1.5
1.0
0.5
0.0
20
18
16
14
12
10
8
10V,9V,8V,7V
6V
5.5
V
6
ID=6A,
GS=10V
4
VGS=4.5V
V
5V
2
0
0
10
20
30
DS, Drain-Source Voltage(V)
40
50
-75 -50 -25
0
25 50 75 100 125 150 175
,
TA Ambient Temperature(°C)
V
Drain Current vs Gate-Source Voltage
Static Drain-Source On-State resistance vs Drain Current
30
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Ta=25°C
VGS=10V
25
20
15
10
5
VDS=30V
VDS=10V
0
0
2
4
6
8
10
0.01
0.1
1
10
100
ID, Drain Current(A)
VGS, Gate-Source Voltage(V)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Forward Drain Current vs Source-Drain Voltage
100
10
5
4
3
2
1
0
VGS=0V
1
Ta=150°C
Ta=25°C
0.1
0.01
0.001
ID=6A
Ta=25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
2
4
6
VGS, Gate-Source Voltage(V)
8
10
VSD, Source Drain Voltage(V)
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 10
Typical Characteristics(Cont.)
Capacitance vs Reverse Voltage
Brekdown Voltage vs Ambient Temperature
10000
1000
100
1.4
1.2
1.0
0.8
0.6
Ciss
Coss
Crss
I =250 A,
D
μ
GS=0V
f=1MHz
V
10
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
1000
175
,
TA Ambient Temperature(°C)
VDS, Drain-to-Source Voltage(V)
Gate Charge Characteristics
Maximum Safe Operating Area
100
10
10
8
10
μs
VDS=120V
VDS=300V
RDS(ON)
Limited
μs
100
1ms
6
10ms
100ms
DC
1
VDS=480V
4
TC=25°C, Tj(max)=150°C
VGS=10V, RθJC=0.68°C/W
Single pulse
0.1
0.01
2
ID=10A
0
0
5
10 15 20 25 30 35 40 45 50
Qg, Total Gate Charge(nC)
1
10
100
VDS, Drain-Source Voltage(V)
Maximum Drain Current vs Case Temperature
Threshold Voltage vs Junction Tempearture
12
10
8
1.4
1.2
1
ID=1mA
0.8
0.6
0.4
0.2
6
4
I =250
μA
D
2
VGS=10V, R =0.68°C/W
θJC
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
C
T , Case Temperature(°C)
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 10
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
Single Pulse Power Rating, Junction to Case
100
2000
1800
1600
1400
1200
1000
800
TJ(MAX)=150°C
TC=25°C
10
R
=0.68°C/W
θJC
1
VDS=15V
600
0.1
Ta=25°C
Pulsed
400
200
0
0.01
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0.001
0.01
0.1
ID, Drain Current(A)
1
10
Transient Thermal Response Curves
1
D=0.5
0.2
JC
θ
1.R (t)=r(t)*R
θ
JC
2.Duty Factor, D=t1/t2
0.1
3.TJM-TC=PDM*RθJC(t)
0.1
JC=0.68 C/W
4.R
°
θ
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
t1, Square Wave Pulse Duration(s)
1.E-01
1.E+00
1.E+01
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 10
Test Circuit and Waveforms
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 10
Test Circuit and Waveforms(Cont.)
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN10N60BE3
CYStek Product Specification
Spec. No. : C126E3
Issued Date : 2015.12.25
Revised Date :
CYStech Electronics Corp.
Page No. : 10/ 10
TO-220 Dimension
Marking:
4
CYS
10N60B
□□□□
Device Name
Date Code
1 2 3
3-Lead TO-220 Plastic Package
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
CYStek Package Code: E3
*: Typical
Millimeters
Inches
Min.
Millimeters
Min. Max.
2.540*
4.980
2.650
7.900
0.000
Inches
DIM
DIM
Min.
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
Min.
Max.
A
A1
b
b1
c
c1
D
E
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.950
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
e
e1
F
H
h
L
L1
V
0.100*
5.180
2.950
8.100
0.300
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
12.900 13.400
2.850
3.250
7/500 REF
0.295 REF
Φ
12.950
0.510
E1
12.650
0.498
3.400
3.800
0.134
0.150
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN10N60BE3
CYStek Product Specification
相关型号：
©2020 ICPDF网 联系我们和版权申明