MTN40N03J3 [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET; N沟道增强型功率MOSFET
| 型号： | MTN40N03J3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总8页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 1/8
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
BVDSS
ID
RDSON
30V
36A
21mΩ
MTN40N03J3
Features
• Dynamic dv/dt Rating
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
TO-252
MTN40N03J3
G：Gate
G D S
D：Drain
S：Source
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
ID
IDM
Pd
30
±20
36
25
150 *1
50
0.4
V
V
A
A
A
W
W/°C
°C
Continuous Drain Current @VGS=10V, TC=25°C
Continuous Drain Current @VGS=10V, TC=100°C
Pulsed Drain Current
Total Power Dissipation (TC=25℃)
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
.
Note : *1 Pulse width limited by safe operating area
*2 . Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 2/8
CYStech Electronics Corp.
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
2.5
110
Unit
°C/W
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
30
-
-
-
3.0
-
100
25
250
21
V
V/°C
V
S
nA
VGS=0, ID=250μA
-
1.0
-
-
-
0.037
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS =10V, ID=18A
-
26
-
-
-
18
24
±
±
IGSS
IDSS
IDSS
VGS= 20
μA
μA
VDS =30V, VGS =0
VDS =24V, VGS =0, Tj=150°C
VGS =10V, ID=18A
-
-
Ω
*RDS(ON)
m
m
Ω
*RDS(ON)
Dynamic
*Qg
-
30
VGS =4.5V, ID=14A
-
-
-
-
-
-
-
-
-
-
17
3
10
7.2
60
22.5
10
800
380
133
-
-
-
-
-
-
-
-
-
-
nC
ID=18A, VDS=24V, VGS=5V
VDS=15V, ID=18A, VGS=10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
ns
Ω
Ω
RG=3.3 , RD=0.83
pF
VGS=0V, VDS=25V, f=1MHz
Source-Drain Diode
*VSD
*IS
*ISM
-
-
-
-
-
-
1.3
36
150
V
A
A
IS=36A, VGS=0V
VD=VG=0, VS=1.3V
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
TO-252
Shipping
Marking
40N03
MTN40N03J3
2500 pcs / Tape & Reel
(RoHS compliant)
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 3/8
CYStech Electronics Corp.
Characteristic Curves
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 4/8
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 5/8
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 6/8
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 7/8
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
Time 25 °C to peak temperature
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN40N03J3
CYStek Product Specification
Spec. No. : C381J3
Issued Date : 2007.06.12
Revised Date :2009.02.04
Page No. : 8/8
CYStech Electronics Corp.
TO-252 Dimension
A
C
Marking:
D
B
Device Name
Date code
40N03
□□□□
F
G
L
3
2
H
E
K
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Millimeters
Inches
Min. Max.
0.0866 0.1102
Millimeters
DIM
DIM
Min.
Max.
Min.
0.45
1.65
0.90
0.45
6.20
5.40
Max.
0.55
1.95
1.50
0.60
6.80
5.80
Min.
2.20
-
Max.
2.80
*2.30
1.14
0.88
5.50
1.60
A
B
C
D
E
F
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
G
H
I
J
K
L
-
-
-
*0.0906
0.0449
0.0346
-
-
0.2047 0.2165
0.0551 0.0630
5.20
1.40
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead :KFC ; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN40N03J3
CYStek Product Specification
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