MTN7000A3 [CYSTEKEC]
N-CHANNEL MOSFET; N沟道MOSFET
| 型号： | MTN7000A3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-CHANNEL MOSFET |
| 文件： | 总4页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C325A3
Issued Date : 2004.02.13
CYStech Electronics Corp.
Revised Date :
Page No. : 1/4
.
.
N-CHANNEL MOSFET
MTN7000A3
Description
The MTN7000A3 is a N-channel enhancement-mode MOSFET.
Symbol
Outline
MTN7000A3
TO-92
G：Gate
S：Source
D：Drain
S G D
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Drain-Gate Voltage (RGS=1MΩ)
VDSS
VDGR
60
60
V
V
Gate-Source Voltage
VGS
±20
±40
V
V
---Continuous
VGSM
---Non–repetitive(tp ≤50µs)
ID
ID
200
130
500
mA
mA
mA
mW
Continuous Drain Current (Ta=25°C)
Continuous Drain Current (Ta=100°C)
Pulsed Drain Current (Ta=25°C)
Total Power Dissipation (Ta=25°C)
Derate Above 25°C
IDM
*1
400
Pd
3.2
mW/°C
°C
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Rth,ja
TL
-55~+150
-55~+150
312.5
°C
°C/W
°C
Thermal Resistance, Junction-to-Ambient
Lead Temperature, for 10 second Soldering
260
Note : *1. Pulse Width ≤ 300µs, Duty cycle ≤2%
MTN7000A3
CYStek Product Specification
Spec. No. : C325A3
Issued Date : 2004.02.13
CYStech Electronics Corp.
Revised Date :
Page No. : 2/4
. .
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS/F
IGSS/R
IDSS
60
V
VGS=0, ID=10µA
0.8
3
10
-10
1
V
VDS=VGS, ID=1.0mA
VGS=+15V, VDS=0
VGS=-15V, VDS=0
nA
nA
µA
mA
VDS=48V, VGS=0
ID(ON)
75
VDS=10V, VGS=4.5V
ID=75mA, VGS=4.5V
ID=75mA, VGS=10V
VDS=10V, ID=200mA
5.3
5
-
60
25
5
RDS(ON)
Ω
GFS
Ciss
Coss
Crss
100
-
-
-
-
mS
-
-
-
pF
VDS=25V, VGS=0, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Characteristic Curves
TYPICAL OUTPUT CHARACTERISICS
TYTICAL TRANSFER CHARACTERISTIC
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VGS=8V
VGS=5V
VGS=4V
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
DRAIN-SOURCE ---VDS(V)
GATE-SOURCE VOLTAGE---VGS(V)
MTN7000A3
CYStek Product Specification
Spec. No. : C325A3
Issued Date : 2004.02.13
CYStech Electronics Corp.
Revised Date :
Page No. : 3/4
. .
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
VS GATE-SOURCE VOLTSAGE
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE vs DRAIN CURRENT
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
9
8
7
6
5
4
3
2
1
0
VGS=5V
ID=115mA
VGS=10V
ID=57.5m
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
DRAIN CURRENT---ID(A)
GATE-SOURCE VOLTAGE---VGS(V)
REVERSE DRAIN CURRENT vs SOURCE-
DRAIN VOLTAGE
1.00
FORWARD TRANSFER ADMITTANCE
vs DRAIN CURRENT
1000
100
10
VGS=10V
Pulsed
0.10
0.01
VGS=10V
VGS=0V
1.00
1
0.00
0.50
1.50
0.001
0.01
0.1
1
DRAIN CURRENT---ID(A)
SOURCE-DRAIN VOLTAGE---VSD(V)
SWITCHING
CHARACTERISTICS
POWER DERATING CURVE
1000
100
10
0.45
0.4
Tf
0.35
0.3
Td(off)
0.25
0.2
Td(on)
0.15
0.1
Tr
0.05
0
1
0
50
100
150
200
0.001
0.01
0.1
1
AMBIENT TEMPERATURE---Ta(℃)
DRAIN CURRENT---ID(A)
MTN7000A3
CYStek Product Specification
Spec. No. : C325A3
Issued Date : 2004.02.13
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
. .
TO-92 Dimension
α2
α3
Marking:
A
B
2N7000
1
2
3
C
D
H
G
Style: Pin 1.Source 2.Gate 3.Drain
α1
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
I
E
F
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
4.83
4.83
-
Min.
Max.
0.56
*2.54
*1.27
*5°
*2°
*2°
A
B
C
D
E
F
0.1704 0.1902
0.1704 0.1902
4.33
4.33
12.70
0.36
-
G
H
0.0142 0.0220
0.36
-
-
-
-
-
*0.1000
*0.0500
*5°
-
-
-
-
-
0.5000
-
I
0.0142 0.0220
*0.0500
0.1323 0.1480
0.56
*1.27
3.76
α1
α2
α3
-
*2°
3.36
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN7000A3
CYStek Product Specification
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