MTP2603G6 [CYSTEKEC]
P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET型号: | MTP2603G6 |
厂家: | CYSTECH ELECTONICS CORP. |
描述: | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
文件: | 总5页 (文件大小:284K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Spec. No. : C394G6
Issued Date : 2006.11.24
Revised Date :2009.03.16
Page No. : 1/5
CYStech Electronics Corp.
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTP2603G6
Description
The MTP2603G6 is a P-channel enhancement-mode MOSFET, providing the designer with
the best combination of fast switching, ruggedized device design, low on-resistance and cost
effectiveness.
The TSOP-6 package is universally preferred for all commercial-industrial surface mount
applications.
Features
Equivalent Circuit
• Simple drive requirement
• Low on-resistance
• Small package outline
• Pb-free package
MTP2603G6
G:Gate
S:Source
D:Drain
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Symbol
Limits
-20
Unit
V
VDS
VGS
ID
Gate-Source Voltage
±12
V
-5
A
Continuous Drain Current @TA=25 °C (Note 1)
Continuous Drain Current @TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
ID
-4
A
IDM
Pd
-20
A
2
W
Total Power Dissipation @ TA=25 °C
Linear Derating Factor
0.016
-55~+150
-55~+150
62.5
W / °C
°C
°C
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Thermal Resistance, Junction-to-Ambient (Note 1)
Rth,ja
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156℃/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width ≤300μs, Duty Cycle≤2%
MTP2603Q6
CYStek Product Specification
Spec. No. : C394G6
Issued Date : 2006.11.24
Revised Date :2009.03.16
Page No. : 2/5
CYStech Electronics Corp.
Electrical Characteristics (Ta=25°C, unless otherwisenoted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
-20
-
-0.5
-
-
-
-
-
V
VGS=0, ID=-250μA
Δ
ΔTj
℃
℃
BVDSS
VGS(th)
IGSS
/
V/
Reference to 25 , ID=-1mA
-0.1
-
-
-
-
-
-
-
-
-1.2
±100
-1
-10
53
65
120
250
V
VDS=VGS, ID=-250μA
VGS=±12V, VDS=0
VDS=-20V, VGS=0, Tj=25
VDS=-16V, VGS=0, Tj=55
ID=-4.5A, VGS=-10V
ID=-4.2A, VGS=-4.5V
ID=-2.0A, VGS=-2.5V
ID=-1.0A, VGS=-1.8V
VDS=-5V, ID=-2.8A
nA
μA
μA
℃
℃
IDSS
IDSS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
*RDS(ON)
mΩ
*GFS
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
9
-
S
740
167
126
5.9
3.6
32.4
2.6
10.6
2.32
3.68
1200
pF
VDS=-15V, VGS=0, f=1MHz
-
-
-
-
-
-
16
-
ns
ns
ns
VDS=-15V, ID=-4.2A,
VGS=-10V, RGEN=6 , RD=3.6
Ω
Ω
ns
nC
nC
nC
VDS=-16V, ID=-4.2A,
VGS=-4.5V,
Qgs
Qgd
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Source Drain Diode
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
IS=-1.2A,VGS=0V
*VSD
*Trr
Qrr
-
-
-
-
-1.2
-
-
V
ns
nC
27.7
22
IS=-4.2A,VGS=0V,dI/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTP2603Q6
CYStek Product Specification
Spec. No. : C394G6
Issued Date : 2006.11.24
Revised Date :2009.03.16
Page No. : 3/5
CYStech Electronics Corp.
Characteristic Curves
MTP2603Q6
CYStek Product Specification
Spec. No. : C394G6
Issued Date : 2006.11.24
Revised Date :2009.03.16
Page No. : 4/5
CYStech Electronics Corp.
Characteristic Curves(Cont.)
MTP2603Q6
CYStek Product Specification
Spec. No. : C394G6
Issued Date : 2006.11.24
Revised Date :2009.03.16
Page No. : 5/5
CYStech Electronics Corp.
TSOP-6 Dimension
Marking:
Style:
Pin 1. Gate1 (G1)
Pin 2. Source2 (S2)
Pin 3. Gate2 (G2)
Pin 4. Drain2 (D2)
Pin 5. Source1 (S1)
Pin 6. Drain1 (D1)
Device Name
Date Code
2603
□□□□
●
6-Lead TSOP-6 Plastic
Surface Mounted Package
CYStek Package Code: G6
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
2.70
2.60
1.40
Max.
3.10
3.00
1.80
Min.
Max.
Min.
0
-
Max.
0.10
0.25
A
B
0.1063
0.1024
0.0551
0.1220
0.1181
0.0709
G
H
I
0
-
0.0039
0.0098
0.0047 REF
C
0.12 REF
D
0.0748 REF
0.0374 REF
0.0374 REF
1.90 REF
0.95 REF
0.95 REF
J
K
L
0.0177 REF
0.0236 REF
0.45 REF
0.60 REF
d1
d2
E
0°
10°
0.0433
0°
10°
1.10
0.0118
0.0276
0.0197
0.0394
0.30
0.70
0.50
1.00
M
-
-
F
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : 42 Alloy ; pure tin plated
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2603Q6
CYStek Product Specification
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