MTP2603G6 [CYSTEKEC]

P-CHANNEL ENHANCEMENT MODE POWER MOSFET; P沟道增强型功率MOSFET
MTP2603G6
型号: MTP2603G6
厂家: CYSTECH ELECTONICS CORP.    CYSTECH ELECTONICS CORP.
描述:

P-CHANNEL ENHANCEMENT MODE POWER MOSFET
P沟道增强型功率MOSFET

文件: 总5页 (文件大小:284K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Spec. No. : C394G6  
Issued Date : 2006.11.24  
Revised Date :2009.03.16  
Page No. : 1/5  
CYStech Electronics Corp.  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET  
MTP2603G6  
Description  
The MTP2603G6 is a P-channel enhancement-mode MOSFET, providing the designer with  
the best combination of fast switching, ruggedized device design, low on-resistance and cost  
effectiveness.  
The TSOP-6 package is universally preferred for all commercial-industrial surface mount  
applications.  
Features  
Equivalent Circuit  
Simple drive requirement  
Low on-resistance  
Small package outline  
Pb-free package  
MTP2603G6  
GGate  
SSource  
DDrain  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Drain-Source Voltage  
Symbol  
Limits  
-20  
Unit  
V
VDS  
VGS  
ID  
Gate-Source Voltage  
±12  
V
-5  
A
Continuous Drain Current @TA=25 °C (Note 1)  
Continuous Drain Current @TA=70 °C (Note 1)  
Pulsed Drain Current (Note 2, 3)  
ID  
-4  
A
IDM  
Pd  
-20  
A
2
W
Total Power Dissipation @ TA=25 °C  
Linear Derating Factor  
0.016  
-55~+150  
-55~+150  
62.5  
W / °C  
°C  
°C  
Operating Junction Temperature  
Storage Temperature  
Tj  
Tstg  
Thermal Resistance, Junction-to-Ambient (Note 1)  
Rth,ja  
°C/W  
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board. 156/W when mounted on minimum copper pad.  
2.Pulse width limited by maximum junction temperature.  
3.Pulse Width 300μs, Duty Cycle2%  
MTP2603Q6  
CYStek Product Specification  
Spec. No. : C394G6  
Issued Date : 2006.11.24  
Revised Date :2009.03.16  
Page No. : 2/5  
CYStech Electronics Corp.  
Electrical Characteristics (Ta=25°C, unless otherwisenoted)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVDSS  
-20  
-
-0.5  
-
-
-
-
-
V
VGS=0, ID=-250μA  
Δ
ΔTj  
BVDSS  
VGS(th)  
IGSS  
/
V/  
Reference to 25 , ID=-1mA  
-0.1  
-
-
-
-
-
-
-
-
-1.2  
±100  
-1  
-10  
53  
65  
120  
250  
V
VDS=VGS, ID=-250μA  
VGS=±12V, VDS=0  
VDS=-20V, VGS=0, Tj=25  
VDS=-16V, VGS=0, Tj=55  
ID=-4.5A, VGS=-10V  
ID=-4.2A, VGS=-4.5V  
ID=-2.0A, VGS=-2.5V  
ID=-1.0A, VGS=-1.8V  
VDS=-5V, ID=-2.8A  
nA  
μA  
μA  
IDSS  
IDSS  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
*RDS(ON)  
mΩ  
*GFS  
Ciss  
Coss  
Crss  
td(ON)  
tr  
td(OFF)  
tf  
Qg  
9
-
S
740  
167  
126  
5.9  
3.6  
32.4  
2.6  
10.6  
2.32  
3.68  
1200  
pF  
VDS=-15V, VGS=0, f=1MHz  
-
-
-
-
-
-
16  
-
ns  
ns  
ns  
VDS=-15V, ID=-4.2A,  
VGS=-10V, RGEN=6 , RD=3.6  
Ω
Ω
ns  
nC  
nC  
nC  
VDS=-16V, ID=-4.2A,  
VGS=-4.5V,  
Qgs  
Qgd  
-
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
Source Drain Diode  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
IS=-1.2A,VGS=0V  
*VSD  
*Trr  
Qrr  
-
-
-
-
-1.2  
-
-
V
ns  
nC  
27.7  
22  
IS=-4.2A,VGS=0V,dI/dt=100A/μs  
*Pulse Test : Pulse Width 300μs, Duty Cycle2%  
MTP2603Q6  
CYStek Product Specification  
Spec. No. : C394G6  
Issued Date : 2006.11.24  
Revised Date :2009.03.16  
Page No. : 3/5  
CYStech Electronics Corp.  
Characteristic Curves  
MTP2603Q6  
CYStek Product Specification  
Spec. No. : C394G6  
Issued Date : 2006.11.24  
Revised Date :2009.03.16  
Page No. : 4/5  
CYStech Electronics Corp.  
Characteristic Curves(Cont.)  
MTP2603Q6  
CYStek Product Specification  
Spec. No. : C394G6  
Issued Date : 2006.11.24  
Revised Date :2009.03.16  
Page No. : 5/5  
CYStech Electronics Corp.  
TSOP-6 Dimension  
Marking:  
Style:  
Pin 1. Gate1 (G1)  
Pin 2. Source2 (S2)  
Pin 3. Gate2 (G2)  
Pin 4. Drain2 (D2)  
Pin 5. Source1 (S1)  
Pin 6. Drain1 (D1)  
Device Name  
Date Code  
2603  
□□□□  
6-Lead TSOP-6 Plastic  
Surface Mounted Package  
CYStek Package Code: G6  
Inches  
DIM  
Millimeters  
Inches  
Millimeters  
DIM  
Min.  
Max.  
Min.  
2.70  
2.60  
1.40  
Max.  
3.10  
3.00  
1.80  
Min.  
Max.  
Min.  
0
-
Max.  
0.10  
0.25  
A
B
0.1063  
0.1024  
0.0551  
0.1220  
0.1181  
0.0709  
G
H
I
0
-
0.0039  
0.0098  
0.0047 REF  
C
0.12 REF  
D
0.0748 REF  
0.0374 REF  
0.0374 REF  
1.90 REF  
0.95 REF  
0.95 REF  
J
K
L
0.0177 REF  
0.0236 REF  
0.45 REF  
0.60 REF  
d1  
d2  
E
0°  
10°  
0.0433  
0°  
10°  
1.10  
0.0118  
0.0276  
0.0197  
0.0394  
0.30  
0.70  
0.50  
1.00  
M
-
-
F
Notes : 1.Controlling dimension : millimeters.  
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.  
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.  
Material :  
Lead : 42 Alloy ; pure tin plated  
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0  
Important Notice:  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.  
CYStek reserves the right to make changes to its products without notice.  
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.  
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.  
MTP2603Q6  
CYStek Product Specification  

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