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KBP205G Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A
Prototype PCB
Part No.:   KBP205G
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Description:   Single-phase Silicon Bridge Rectifier Reverse Voltage 50 to 1000 V Forward Current 2.0A
File Size :   143 K    
Page : 2 Pages
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Maker   DACHANG [ RUGAO DACHANG ELECTRONICS CO., LTD ]http://www.dachang.com.cn
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  KBP205G Datasheet PDF page 2  
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SIYU
R
KBP201G......KBP207G
Single-phase Silicon Bridge Rectifier
Reverse Voltage 50 to 1000 V
Forward Current 2.0A
特征
Features
·反向漏电流½
Low reverse leakage
High forward surge capability
Surge
overload rating: 60 Amperes peak
·正向浪涌承受½力较强
·浪涌承受½力:60 A
塑封硅整流桥堆
反向电压
50---1000V
正向电流
2.0 A
KBP
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·封装:
塑料封装
Case: Molded Plastic
·极性:
标记模压或印于本½
Polarity: Symbols molded or marked on body
·安装½½:
任意
Unit(mm)
Mounting Position: Any
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
符号
Ratings at 25℃ ambient temperature unless otherwise specified.
KBP KBP KBP KBP KBP KBP KBP
Symbols
201G 202G 203G 204G 205G 206G 207G
最大可重复峰值反向电压
Maximum repetitive peak reverse voltage
最大均方根电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
T
A
=50℃
最大正向平均整流电流
Maximum average forward rectified current
单½
Unit
V
V
V
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
θJA
Tj
TSTG
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
2.0
60
A
A
峰值正向浪涌电流 8.3ms单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
典型热阻
工½结温
Typical thermal resistance
30
/W
Operating junction
-55 --- +125
-55 --- +150
存储温度
Storage temperature range
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
最大正向电压
Maximum forward voltage
KBP KBP KBP KBP KBP KBP KBP
201G 202G 203G 204G 205G 206G 207G
1.1
10
500
单½
Unit
V
μA
I
F
=2.0A
TA= 25℃
TA = 125℃
V
F
最大反向电流
Maximum reverse current
I
R
大昌电子
DACHANG ELECTRONICS
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