KBP005 [DAESAN]

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts; 当前2.0安培电压50到1000伏特
KBP005
型号: KBP005
厂家: DAESAN ELECTRONICS CORP.    DAESAN ELECTRONICS CORP.
描述:

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts
当前2.0安培电压50到1000伏特

二极管
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中文:  中文翻译
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CURRENT 2.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBP005 THRU KBP10  
Features  
· Glass Passivated Die Construction  
· High Case Dielectric Strength of 1500VRMS  
· Low Reverse Leakage Current  
A
· Surge Overload Rating to 40A Peak  
· Ideal for Printed Circuit Board Applications  
· Plastic Material - UL Flammability Classification 94V-0  
B
-
+
H
C
K B P  
Mechanical Data  
Dim  
A
Min  
14.00  
10.50  
15.00  
4.70  
Max  
G
15.00  
11.50  
D
· Case: Molded Plastic  
B
· Terminals: Plated Leads, Solderable per  
MIL-STD-202, Method 208  
· Polarity: As Marked on Body  
· Approx. Weight: 1.52 grams  
· Mounting Position: Any  
C
E
D
5.00  
4.00  
2.50  
E
3.50  
G
2.30  
H
0.70 Typical  
· Marking: Type Number  
All Dimens ions in mm  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBP  
005  
KBP  
01  
KBP  
02  
KBP  
04  
KBP  
06  
KBP  
08  
KBP  
Symbols  
Units  
10  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse voltage  
V
R(RMS)  
280  
2.0  
Volts  
Average Rectified Output Current @ T  
C
=105  
Io  
Amps  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load per element (JEDEC method)  
I
FSM  
40  
Amps  
V
FM  
1.1  
Volts  
μA  
pF  
Forward Voltage (per element)  
@ IF=2.0 A  
@ TC=25℃  
5.0  
Peak Reverse Current at Rated  
DC Blocking Voltage  
I
RM  
@ TC=125℃  
500  
Typical Junction Capacitance (Note 1)  
C
j
20  
Typical Thermal Resistance,  
Junction to Case (Note 2)  
30  
/W  
RθJC  
T
STG  
j
Operating and Storage Temperature Range  
-65 to +150  
T
Notes:  
(1) Thermal resistance from junction to case per element. Unit mounted on 300 x 300 x 16mm aluminum plate heat sink.  
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
RATING AND CHARACTERISTIC CURVES KBP005 THRU KBP10  
2.0  
10  
1.5  
TJ = 150°C  
Lead  
TJ = 25°C  
1.0  
Case  
1.0  
Ambient  
0.1  
0.5  
Pulse Width  
= 300 µs  
0
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
50  
100  
150  
VF, INST ANT ANEOUS FWD VOL TAGE (V)  
Fig. 2 Typical Fwd Characteristics  
T, TEMPERA TURE (°C)  
Fig. 1 Forward Current Deratin g Curve  
50  
40  
100  
10  
1
Tj = 25°C  
f = 1MHz  
Tj = 150°c  
Single Half  
Sine Wave  
(JEDEC Method)  
30  
20  
10  
0
1
10  
100  
1
10  
100  
VR , REVERSE VOL TAGE (V)  
NUMBER OF CYCLES AT 60 Hz  
Fig. 3 Max Non-Repetitive Peak Fwd Sur ge Current  
Fig. 4 Typical Junction Capacitance  
10,000  
1000  
Tj = 150ºC  
Tj = 100ºC  
100  
10  
Tj = 125ºC  
1.0  
Tj = 25ºC  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)  
Fig. 5 Typical Reverse Characteristics  

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