KBP201 [DAESAN]
CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts; 当前2.0安培电压50到1000伏特型号: | KBP201 |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts |
文件: | 总2页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CURRENT 2.0 Amperes
VOLTAGE 50 to 1000 Volts
KBP201 THRU KBP207
Features
· Glass Passivated Die Construction
· High Case Dielectric Strength of 1500VRMS
· Low Reverse Leakage Current
A
· Surge Overload Rating to 65A Peak
· Ideal for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
B
-
+
H
C
K B P
Mechanical Data
Dim
A
Min
14.00
10.50
15.00
4.70
Max
G
15.00
11.50
D
· Case : Molded Plastic
B
· Terminals : Plated Leads, Solderable per
MIL-STD-202, Method 208
· Polarity : As Marked on Body
· Approx. Weight : 1.52 grams
· Mounting Position : Any
C
E
D
5.00
4.00
2.50
E
3.50
G
2.30
H
0.70 Typical
· Marking : Type Number
All Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
KBP
201
KBP
202
KBP
203
KBP
204
KBP
205
KBP
206
KBP
Symbols
Units
207
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
RMM
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
Volts
R
RMS Reverse Voltage
V
R(RMS)
280
2.0
Volts
Average Rectified Output Current @ T
C
=105
Io
Amps
℃
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load per element (JEDEC method)
IFSM
65
Amps
VFM
1.1
Volts
Forward Voltage (per element)
@ IF=2.0 A
@ T
C
=25℃
5.0
Peak Reverse Current at Rated
DC Blocking Voltage
IRM
μA
@ TC
=125℃
500
Typical Junction Capacitance
per Element (Note 2)
Cj
25
pF
Typical Thermal Resistance (Note 1)
38
℃/W
RθJC
T
STG
j
Operating and Storage Temperature Range
-65 to +150
℃
T
Notes:
(1) Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 16mm aluminum plate heat sink.
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
RATING AND CHARACTERISTIC CURVES KBP201 THRU KBP207
2.0
10
1.5
TJ = 150°C
Lead
TJ = 25°C
1.0
Case
1.0
0.5
Ambient
0.1
0
Pulse Width
= 300 µs
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
50
100
150
VF, INST ANT ANEOUS FWD VOL TAGE (V)
Fig. 2 Typical Fwd Characteristics
T, TEMPERA TURE (°C)
Fig. 1 Forward Current Deratin g Curve
100
80
100
10
1
Tj = 25°C
f = 1MHz
Tj = 150°c
Single Half
Sine Wave
(JEDEC Method)
60
40
20
0
1
10
100
1
10
NUMBER OF CYCLES AT 60 Hz
100
VR , REVERSE VOL TAGE (V)
Fig. 3 Max Non-Repetitive Peak Fwd S urge C urrent
Fig. 4 Typical Junction Capacitance
10,000
1000
Tj = 150°C
Tj = 125°C
100
10
Tj = 100°C
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)
Fig. 5 Typical Reverse Characteristics
相关型号:
KBP2010-G
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, LEAD FREE, PLASTIC, KBP, 4 PIN
SENSITRON
KBP2010-LF
Bridge Rectifier Diode, 1 Phase, 2A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBP, SIP-4
WTE
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