KBP201 [DAESAN]

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts; 当前2.0安培电压50到1000伏特
KBP201
型号: KBP201
厂家: DAESAN ELECTRONICS CORP.    DAESAN ELECTRONICS CORP.
描述:

CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts
当前2.0安培电压50到1000伏特

二极管
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中文:  中文翻译
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CURRENT 2.0 Amperes  
VOLTAGE 50 to 1000 Volts  
KBP201 THRU KBP207  
Features  
· Glass Passivated Die Construction  
· High Case Dielectric Strength of 1500VRMS  
· Low Reverse Leakage Current  
A
· Surge Overload Rating to 65A Peak  
· Ideal for Printed Circuit Board Applications  
· Plastic Material - UL Flammability Classification 94V-0  
B
-
+
H
C
K B P  
Mechanical Data  
Dim  
A
Min  
14.00  
10.50  
15.00  
4.70  
Max  
G
15.00  
11.50  
D
· Case : Molded Plastic  
B
· Terminals : Plated Leads, Solderable per  
MIL-STD-202, Method 208  
· Polarity : As Marked on Body  
· Approx. Weight : 1.52 grams  
· Mounting Position : Any  
C
E
D
5.00  
4.00  
2.50  
E
3.50  
G
2.30  
H
0.70 Typical  
· Marking : Type Number  
All Dimens ions in mm  
Maximum Ratings And Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive  
load. For capacitive load, derate by 20%)  
KBP  
201  
KBP  
202  
KBP  
203  
KBP  
204  
KBP  
205  
KBP  
206  
KBP  
Symbols  
Units  
207  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
V
V
RMM  
RWM  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
Volts  
R
RMS Reverse Voltage  
V
R(RMS)  
280  
2.0  
Volts  
Average Rectified Output Current @ T  
C
=105  
Io  
Amps  
Non-Repetitive Peak Forward Surge Current,  
8.3ms single half-sine-wave superimposed  
on rated load per element (JEDEC method)  
IFSM  
65  
Amps  
VFM  
1.1  
Volts  
Forward Voltage (per element)  
@ IF=2.0 A  
@ T  
C
=25℃  
5.0  
Peak Reverse Current at Rated  
DC Blocking Voltage  
IRM  
μA  
@ TC  
=125℃  
500  
Typical Junction Capacitance  
per Element (Note 2)  
Cj  
25  
pF  
Typical Thermal Resistance (Note 1)  
38  
/W  
RθJC  
T
STG  
j
Operating and Storage Temperature Range  
-65 to +150  
T
Notes:  
(1) Thermal resistance from junction to case per element. Unit mounted on 75 x 75 x 16mm aluminum plate heat sink.  
(2) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.  
RATING AND CHARACTERISTIC CURVES KBP201 THRU KBP207  
2.0  
10  
1.5  
TJ = 150°C  
Lead  
TJ = 25°C  
1.0  
Case  
1.0  
0.5  
Ambient  
0.1  
0
Pulse Width  
= 300 µs  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
0
50  
100  
150  
VF, INST ANT ANEOUS FWD VOL TAGE (V)  
Fig. 2 Typical Fwd Characteristics  
T, TEMPERA TURE (°C)  
Fig. 1 Forward Current Deratin g Curve  
100  
80  
100  
10  
1
Tj = 25°C  
f = 1MHz  
Tj = 150°c  
Single Half  
Sine Wave  
(JEDEC Method)  
60  
40  
20  
0
1
10  
100  
1
10  
NUMBER OF CYCLES AT 60 Hz  
100  
VR , REVERSE VOL TAGE (V)  
Fig. 3 Max Non-Repetitive Peak Fwd S urge C urrent  
Fig. 4 Typical Junction Capacitance  
10,000  
1000  
Tj = 150°C  
Tj = 125°C  
100  
10  
Tj = 100°C  
1.0  
Tj = 25°C  
0.1  
0.01  
0
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)  
Fig. 5 Typical Reverse Characteristics  

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