MCL4148 [DAESAN]
SMALL SIGNAL SWITCHING DIODES; 小信号开关二极管
| 型号： | MCL4148 |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | SMALL SIGNAL SWITCHING DIODES |
| 文件： | 总3页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMALL SIGNAL
SWITCHING DIODES
MCL4148
Features
· Silicon epitaxial planar diode
· Fast switching diodes
MICRO
MELF
· 500mW power dissipation
SOLDERABLE ENDS
0.008(0.20)
· This diode is also available in the DO-35 case with
the type designation 1N4148
0.043(1.10)
0.079(2.00)
0.071(1.80)
Mechanical Data
· Case: Mini-MELF glass case(DO-35)
· Weight: Approx. 0.05 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbol
Value
75
Units
Volts
Volts
Reverse Voltage
V
R
Peak Reverse Voltage
100
V
RM
Average rectified current, Half wave rectification with
1501)
mA
IAV
Resistive load at T
A=25℃ and F≥50Hz
Surge forward current at t<1S and T
J=25℃
500
mA
IFSM
Power dissipation at T
Junction temperature
A=25℃
5001)
175
mW
Ptot
℃
℃
T
J
Storage temperature range
-65 to +175
T
STG
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Electrical characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified)
Symbols
Min.
Typ.
Max.
Units
Forward voltage
Leakage current
1
Volts
V
F
at V
at V
at V
R
R
R
=20V
=75V
=20V, T
25
5
50
nA
μA
μA
I
I
I
R
R
R
J=150℃
Junction Capacitance at V
R
=VF=0V
4
pF
CJ
Voltage rise when switching ON tested with 50mA
pulse tp=0.1μS, Rise time<30μS, fp=5 to 100KHz
2.5
Volts
V
fr
Reverse Recovery time from I
=6V, R =100Ω
Thermal resistance, junction to Ambient
Rectification efficiency at f=100MHz, VRF=2V
F=10mA to IR=1mA,
4
ns
trr
V
R
L
3501)
K/W
RθJA
η
0.45
1) Vaild provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
RATINGS AND CHARACTERISTIC CURVES MCL4148
FIG.2-DYNAMIC FORWARD RESISTANCE
VERSUS FORWARD CURRENT
FIG.1-FORWARD CHARACTERISTICS
mA
Ω
104
103
102
103
T
J= 25℃
f=1KHz
102
TJ=25℃
TJ=100℃
IF
rf
10
1
10
-
1
2
10
10
-
1
-2
-1
10
10
1
10
102
0
1
2V
mA
VF
I
F
FIG.3-ADMISSIBLE POWER DISSIPATION
VERSUS AMBIENT TEMPERATURE
FIG. 4-RELATIVE CAPACITANCE VERSUS
VOLTAGE
mW
1000
900
800
700
1.1
T
J= 25℃
f=1MHz
1.0
0.9
0.8
0.7
C
tot(VR)
Ptot
600
C
tot(OV)
500
400
300
200
100
0
0
2
4
6
8
10V
0
100
200 ℃
V
R
TA
RATINGS AND CHARACTERISTIC CURVES MCL4148
FIG.5-RECTIFICATION EFFICIENCY MEASUREMENT
FIG.6-LEAKAGE CURRENT VERSUS JUNCTION
TEMPERATURE
CIRCUIT
nA
4
10
3
D.U.T.
10
60
Ω
2nF
VRF=2V
5K
Ω
VO
2
10
10
VR= 20V
1
0
100
200 ℃
FIG.7-ADMISSIBLE REPETITIVE PEAK FORWARD CURRENT VERSUS PULSE DURATION
A
100
V=tp/T T=1/fp
I
FRM
IFRM
10
tp
n=0
T
0.1
0.2
1
0.5
0.1
-5
-4
-3
-
2
-1
10
10
10
10
10
1
10S
tp
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