MD2S [DAESAN]
CURRENT 0.5 Amperes VOLTAGE 50 to 1000 Volts; 当前0.5安培电压50到1000伏特
| 型号： | MD2S |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 0.5 Amperes VOLTAGE 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 0.5 Amperes
VOLTAGE 50 to 1000 Volts
MD1S THRU MD7S
Features
· Glass Passivated Die Construction
· Diffused Junction
L
G
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 30A Peak
· Designed for Printed Circuit Board Applications
· Plastic Material - UL Flammability Classification 94V-0
A
B
D E
H
C
J
MiniDIP
Min
Dim
A
Max
5.75
4.00
0.35
0.20
7.00
1.10
4.90
2.90
2.70
0.80
K
5.43
Mechanical Data
B
3.60
C
0.15
· Case : Molded Plastic
D
E
0.05
· Terminals : Solder Plated Leads,
Solderable per MIL-STD-202, Method 2026
· Polarity : As Marked on Case
· Approx. Weight : 0.125 grams
· Mounting Position : Any
G
H
J
0.70
4.50
2.80
2.50
0.50
K
· Marking : Type Number
L
All Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
Units
MD1S MD2S MD3S MD4S MD5S MD6S MD7S
Peak Repetitive Reverse voltage
Working Peak Reverse voltage
DC Blocking voltage
V
V
V
RMM
RWM
50
100
200
400
600
800
1000
Volts
R
RMS Reverse voltage
V
RMS
35
50
70
140
200
280
400
0.5
420
600
560
800
700
Volts
Volts
Amp
Maximum DC blocking voltage
Average Rectified Output Current @ T
V
DC
100
1000
A
=40
Io
℃
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
I
FSM
30
Amps
VFM
1.0
Volts
Forward voltage (per element)
@ IF=0.4 A
@ T
A
A
=25℃
5.0
Peak Reverse Current at Rated
DC Blocking voltage (per element)
I
RM
μA
@ T
=100℃
500
Typical Thermal Resistance,
Junction to Ambient (Note 2)
75
℃/W
RθJA
T
STG
j
Operating and Storage Temperature Range
-55 to +150
℃
T
Notes:
(1) Mounted on P.C. Board.
(2) Thermal resistance junction to ambient.
RATING AND CHARACTERISTIC CURVES MD1S THRU MD7S
10
0.8
0.6
0.4
Alumina S ubstrate
1.0
G lass E poxy P C Board
0.1
0.2
0
Tj = 25 C
R esistive or Inductive Load
P ulse Width = 300
s
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
40
80
120
160
TA, AMBIE NT TE MP E R ATUR E ( C )
Fig. 1 Output C urrent Derating C urve
VF, INS TANTANE OUS FOR WAR D VOLTAG E (V)
Fig. 2 Typical Forward C haracteristics (per leg)
100
35
Tj = 25
C
f = 1.0MHz
30
20
10
10
0
TA = 25
C
S ingle Half S ine-W ave
P ulse Width = 5.3ms
(J E DE C Method)
1
1
10
100
1.0
10
NUMBE R OF C YC LE S AT 60 Hz
VR , R E VE R S E VOLTAG E (V)
Fig. 3 Maximum P eak Forward S urge C urrent (per leg)
Fig. 4 Typical J unction C apacitance
100
Tj = 125
C
10
1.0
0.1
Tj = 25
C
0.01
0
20
40
60
80
100 120 140
P E R C E NT OF R ATE D P E AK R E VE R S E VOLTAG E ()%
Fig. 5 Typical R everse C haracteristics (per element)
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