RS2G [DAESAN]
CURRENT 1.5 Amperes VOLTAGE 50 to 800 Volts; 当前1.5安培电压50至800伏型号: | RS2G |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | CURRENT 1.5 Amperes VOLTAGE 50 to 800 Volts |
文件: | 总2页 (文件大小:325K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CURRENT 1.5 Amperes
VOLTAGE 50 to 800 Volts
RS2A THRU RS2K
Features
· For surface mounted applications in order optimize
board space
· Low profile package
DO-214AA (SMB)
· Built-in strain relief, ideal for automated placement
· Fast switching speed
· Plastic package has Unerwrites Laboratory
Flammability Classification 94V-0
· Low forward voltage drop
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
· Glass passivated chip junction
· High temperature soldering : 250℃/10 seconds
at terminals
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
Mechanical Data
0.008(0.203)
MAX.
0.050(1.27)
0.030(0.76)
· Case : JEDEC SMB(DO-214AA) molded plastic body
· Terminals : Plated axial lead solderable per
MIL-STD-750, method 2026
· Polarity : Color band denotes cathode end
· Weight : 0.003 ounce, 0.093 gram
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
RS2A
RS2B
RS2D
RS2G
RS2J
RS2K
Units
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
Volts
Volts
Volts
V
Maximum DC blocking voltage
V
DC
100
Maximum average forward rectified current
at TL=100℃
I
(AV)
1.5
50.0
1.30
Amps
Peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Amps
Volts
μA
Maximum instantaneous forward voltage
at 1.5A
VF
TA=25℃
5.0
Maximum reverse
I
R
current at rated voltage
TA=125℃
200
Trr
Maximum reverse recovery time (Note 1)
Typical thermal resistance (Note 3)
Typical junction capacitance (Note 2)
150
250
500
nS
RθJL
RθJA
18.0
55.0
℃/W
CJ
50.0
pF
T
J
Operating junction and storage
temperature range
℃
-55 to +150
TSTG
Notes:
(1) Test conditions: I
F=0.5A, IR=1.0A, Irr=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
(3) Thermal resistance from junction to ambient and junction to lead mounted on PCB mounted on
0.27×0.27"(7.0×7.0mm) copper pad areas
RATINGS AND CHARACTERISTIC CURVES RS2A THRU RS2K
FIG.2-MAXIMUM NON-REPETITIVE FORWARD
FIG.1-FORWARD CURRENT DERATING CURVE
SURGE CURRENT
50
RESISTIVE OR INDUCTIVE LOAD
TL=100℃
1.5
8.3m SINGLE HALF SINE WAVE
(JEDEC Method)
40
30
1.0
0.5
0
20
10
0
P.C.B.MOUNTED ON
0.27X0.27"(7.0X7.0mm)
COPPER PAD AREAS
50 60
70
80
90 100 110 120 130 140 150 160
LEAD TEMPERATURE ( ℃)
1
2
4
6
8
10
20
40
60
100
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL JUNCTION CAPACITANCE
20
10
30
TJ
=25℃
f=1.0MHz
Vsig=50mVp-p
1
TJ=25℃
10
1
100
10
REVERSE VOLTAGE. (V)
0.1
PULSE WIDTH=300ms
1% DUTY CYCLE
0.01
FIG.5-TYPICAL REVERSE CHARACTERISTICS
0.4 0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100
TJ=125℃
10
1
TJ=25℃
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
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