S3K [DAESAN]
CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts; 当前3.0安培电压50到1000伏特
| 型号： | S3K |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：336K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 3.0 Amperes
VOLTAGE 50 to 1000 Volts
S3A THRU S3M
Features
· For surface mounted applications
· Glass passivated junction
· Low profile package
DO-214AB (SMC)
· Built-in strain relief, ideal for automated placement
· Plastic package has Unerwrites Laboratory
Flammability Classification 94V-0
· High temperature soldering guaranteed: 250℃/10
seconds, at terminals
0.124(3.15)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.31)
0.006(0.15)
Mechanical Data
0.103(2.62)
0.079(2.00)
· Case : JEDEC SMC(DO-214AB) molded plastic body
· Terminals : Plated axial lead solderable per
MIL-STD-750, method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
0.008(0.203)
MAX.
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
· Weight : 0.007 ounce, 0.25 gram
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
S3A
S3B
S3D
S3G
S3J
S3K
S3M
Units
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
Maximum DC blocking voltage
V
DC
100
1000
Maximum average forward rectified current
at TL=75℃ (Note 2)
I
(AV)
3.0
100.0
1.15
Amps
Peak forward surge current 8.3ms half sine
wave superimposed on rated load
(JEDEC method) TL=75℃
IFSM
Amps
Volts
μA
Maximum instantaneous forward voltage
at 1.0A
V
F
T
T
A
=25℃
1.0
Maximum reverse
current at rated voltage
IR
A=125℃
250
RθJL
RθJA
13.0
47.0
Typical thermal resistance (Note 2)
℃/W
trr
Typical reverse capacitance (Note 3)
Typical junction capacitance (Note 1)
2.5
μS
CJ
60.0
pF
T
J
℃
Operating and storage temperature range
-55 to +175
TSTG
Notes:
(1) Measured at 1MHz and applied reverse voltage of 4.0V dc.
(2) Thermal resistance from junction to ambient and from junction to lead mounted on 0.2×0.2"(0.5×0.5mm)
copper opad areas.
(3) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A
RATINGS AND CHARACTERISTIC CURVES S3A THRU S3M
FIG.2-TYPICAL INSTANTANEOUS FORWARD
FIG.1-FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
100
3.5
3.0
10
2.5
2.0
RESISTIVE OR INDUCTIVE LOAD
P.C.B.MOUNTED ON
0.3X0.3"(8.0X8.0MM)
1.5
1
0.1
COPPER PAD AREAS
1.0
0.5
TJ=25℃
PULSE WIDTH=300µS
1% DUTY CYCLE
0
50
60
70
80
90
100 110 120 130 140 150
LEAD TEMPERATURE (℃)
0.01
0.6
0.8
1.0
1.2
1.3
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.4-TYPICAL REVERSE CHARACTERISTICS
FIG.3-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
100
TJ=125℃
200
100
10
1.0
0.1
TL=25℃
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TJ=25℃
0
20
40
60
80
100
10
1
10
NUMBER OF CYCLES AT 60Hz
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
100
T
J
=25℃
10
f=1.0MHz
Vsig=50mVp-p
1
10
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE.VOLTS
t,PULSE DURATION,sec
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