SBR1620 [DAESAN]
CURRENT 16.0Amperes VOLTAGE 20 to 100 Volts; 电流16.0安培电压20至100伏特型号: | SBR1620 |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | CURRENT 16.0Amperes VOLTAGE 20 to 100 Volts |
文件: | 总2页 (文件大小:374K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CURRENT 16.0Amperes
VOLTAGE 20 to 100 Volts
SBR1620 THRU SBR16100
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
TO-220
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
.180
(4.6)
3.8 +.2
.412
(10.5)
MAX.
.050
(1.27)
HOLE THRU
.108
(2.75)
.248
(6.3)
.595
(15.1)
MAX.
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
.550
(14.0)
MIN.
.051
MAX.
MAX.
(1.3)
.040
(1.0)
.158
(4.0)
MAX.
.100
(2.54)
.120
(3.05)
Mechanical Data
· Case : JEDEC TO-220 molded plastic body
· Terminals : Lead solderable per
PIN 1
PIN 3
PIN 1
PIN 3
+
CASE
PIN 2
CASE
PIN 2
MIL-STD-750, Method 2026
Positive CT
Suffix "C"
Negative CT
Suffix "A"
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
Dimensions in inches and (millimeters)
· Weight : 0.08 ounce, 2.24 grams
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBR
SBR
SBR
SBR
SBR
SBR
SBR
Symbols
Units
Volts
Volts
Volts
1620
1630
1640
1650
1660
1680 16100
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
100
70
V
Maximum DC blocking voltage
VDC
100
Maximum average forward rectified current
at Tc=95℃
I(AV
)
16.0
32.0
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
IFRM
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 8.0A (Note 1)
V
F
0.65
0.75
0.80
0.85
Volts
mA
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
A
=25℃
1.0
3.0
IR
=125℃
30
50
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
Notes:
RθJC
℃/W
℃
T
J
-65 to +125
-65 to +150
℃
T
STG
-65 to +150
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR1620-SBR16100
FIG.2-TYPICAL INSTANTANEOUS FORWARD
FIG.1-FORWARD CURRENT DERATING CURVE
CHARACTERISTICS
20
── SBR1620-SBR1640
- - - SBR1650-SBR16100
40
16
12
8.0
4.0
0
TC=125℃
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
TC
=25℃
0
50
100
150
LEAD TEMPERATURE (℃)
1.0
0.1
PULSE WIDTH=300
1% DUTY CYCLE
㎲
FIG.4-TYPICAL JUNCTION CAPACITANCE
4000
2
3
4
5
6
7
8
9
10
── SBR1650-SBR16100
- - - SBR1620-SBR1640
2000
1000
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
FIG.3-TYPICAL REVERSE CHARACTERISTICS
100
200
100
0.1
0.4
1.0
10
40 60
100
TC=125℃
REVERSE VOLTAGE (VOLTS)
10
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
TC=75℃
1.0
150
125
TC=25℃
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
100
75
0.1
50
25
0.01
1.0
2.0
5.0
10
20
50
100
20
40
60
80
100
120
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTAGE
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