SBR1620 [DAESAN]

CURRENT 16.0Amperes VOLTAGE 20 to 100 Volts; 电流16.0安培电压20至100伏特
SBR1620
型号: SBR1620
厂家: DAESAN ELECTRONICS CORP.    DAESAN ELECTRONICS CORP.
描述:

CURRENT 16.0Amperes VOLTAGE 20 to 100 Volts
电流16.0安培电压20至100伏特

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中文:  中文翻译
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CURRENT 16.0Amperes  
VOLTAGE 20 to 100 Volts  
SBR1620 THRU SBR16100  
Features  
· Plastic Package has Underwriters Laboratory  
Flammability Classification 94V-0  
TO-220  
· Metal silicon junction, majority carrier conduction  
· Guard ring for overvoltage protection  
· Low power loss, high efficiency  
· High current capability, Low forward voltage drop  
· High surge capability  
· For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
· Dual rectifier construction  
.180  
(4.6)  
3.8 +.2  
.412  
(10.5)  
MAX.  
.050  
(1.27)  
HOLE THRU  
.108  
(2.75)  
.248  
(6.3)  
.595  
(15.1)  
MAX.  
· High temperature soldering guaranteed :  
250/10 seconds, 0.25" (6.35mm) from case  
.550  
(14.0)  
MIN.  
.051  
MAX.  
MAX.  
(1.3)  
.040  
(1.0)  
.158  
(4.0)  
MAX.  
.100  
(2.54)  
.120  
(3.05)  
Mechanical Data  
· Case : JEDEC TO-220 molded plastic body  
· Terminals : Lead solderable per  
PIN 1  
PIN 3  
PIN 1  
PIN 3  
+
CASE  
PIN 2  
CASE  
PIN 2  
MIL-STD-750, Method 2026  
Positive CT  
Suffix "C"  
Negative CT  
Suffix "A"  
· Polarity : As marked. No suffix indicates Common  
Cathode, suffix "A" indicates Common Anode  
· Mounting Position : Any  
Dimensions in inches and (millimeters)  
· Weight : 0.08 ounce, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive  
load. For capacitive load, derate by 20%)  
SBR  
SBR  
SBR  
SBR  
SBR  
SBR  
SBR  
Symbols  
Units  
Volts  
Volts  
Volts  
1620  
1630  
1640  
1650  
1660  
1680 16100  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
RRM  
RMS  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
80  
56  
80  
100  
70  
V
Maximum DC blocking voltage  
VDC  
100  
Maximum average forward rectified current  
at Tc=95  
I(AV  
)
16.0  
32.0  
Amps  
Amps  
Repetitive peak forward current(square wavr,  
20KHZ) at Tc=105℃  
IFRM  
Peak forward surge current 8.3ms single half  
sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
150.0  
Amps  
Maximum instantaneous forward voltage  
at 8.0A (Note 1)  
V
F
0.65  
0.75  
0.80  
0.85  
Volts  
mA  
Maximum instantaneous reverse  
current at rated DC blocking  
voltage (Note1)  
T
T
A
A
=25℃  
1.0  
3.0  
IR  
=125℃  
30  
50  
Typical thermal resistance (Note 2)  
Operating junction temperature range  
Storage temperature range  
Notes:  
RθJC  
/W  
T
J
-65 to +125  
-65 to +150  
T
STG  
-65 to +150  
(1) Pulse test: 300μS pulse width, 1% duty cycle  
(2) Thermal resistance from junction to case  
RATINGS AND CHARACTERISTIC CURVES SBR1620-SBR16100  
FIG.2-TYPICAL INSTANTANEOUS FORWARD  
FIG.1-FORWARD CURRENT DERATING CURVE  
CHARACTERISTICS  
20  
── SBR1620-SBR1640  
- - - SBR1650-SBR16100  
40  
16  
12  
8.0  
4.0  
0
TC=125℃  
SINGLE PHASE  
HALF WAVE 50Hz  
INDUCTIVE OR  
RESISTIVE LOAD  
TC  
=25℃  
0
50  
100  
150  
LEAD TEMPERATURE ()  
1.0  
0.1  
PULSE WIDTH=300  
1% DUTY CYCLE  
FIG.4-TYPICAL JUNCTION CAPACITANCE  
4000  
2
3
4
5
6
7
8
9
10  
── SBR1650-SBR16100  
- - - SBR1620-SBR1640  
2000  
1000  
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
FIG.3-TYPICAL REVERSE CHARACTERISTICS  
100  
200  
100  
0.1  
0.4  
1.0  
10  
40 60  
100  
TC=125℃  
REVERSE VOLTAGE (VOLTS)  
10  
FIG.5-MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
TC=75℃  
1.0  
150  
125  
TC=25℃  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
100  
75  
0.1  
50  
25  
0.01  
1.0  
2.0  
5.0  
10  
20  
50  
100  
20  
40  
60  
80  
100  
120  
140  
NUMBER OF CYCLES AT 60Hz  
PERCENT OF RATED PEAK REVERSE VOLTAGE  

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