SBR5045 概述
CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS 电流50.0安培电压30 〜60伏
SBR5045 数据手册
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PDF下载CURRENT 50.0Amperes
VOLTAGE 30 to 60 Volts
SBR5030 THRU SBR5060
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
TO-3P
.635(16.13)
.625(15.88)
.320(8.13)
.310(7.87)
.120(3.05)
.115(2.92)
.205(5.21)
.195(4.49)
DIA.
· High current capability, Low forward voltage drop
· High surge capability
.180(4.53)
.170(4.32)
30
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· Dual rectifier construction
.840(21.34)
.820(20.83)
.170(4.32)
.150(3.81)
.12(3.0)
.11(2.8)
· High temperature soldering guaranteed:
250℃/10 seconds, 0.17" (4.3mm) from case
.095
(2.4)
.800(20.32)
.770(19.56)
.030(0.8)
.020(0.5)
.050(1.27)
.045(1.14)
Mechanical Data
.225(5.7)
.205(5.2)
· Case : JEDEC TO-3P molded plastic body
· Terminals : Lead solderable per
PIN
PIN
1
3
PIN
PIN
1
3
+
MIL-STD-750, Method 2026
CASE
PIN
CASE
2
PIN
2
· Polarity : As marked. No suffix indicates Common
Cathode, suffix "A" indicates Common Anode
· Mounting Position : Any
Positive CT
Suffix "C"
Negative CT
Suffix "A"
Dimensions in inches and (millimeters)
· Weight : 0.20ounce, 5.6 grams
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBR5050
SBR5060 Units
Symbols
SBR5030 SBR5035 SBR5040 SBR5045
50
35
50
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
RRM
RMS
30
21
30
35
24
35
40
28
40
45
32
45
60
42
60
Volts
Volts
Volts
Maximum DC blocking voltage
VDC
Maximum average forward rectified current
at VR(equiv.)<0.2VR(DC) (See Fig 1)
I(AV
)
50.0
Amps
Amps
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
I
FSM
400.0
Maximum instantaneous forward voltage
at 25A (Note 1)
V
F
0.65
100
0.70
Volts
mA
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
=25℃
10.0
1.4
I
R
A
=125℃
150
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
℃/W
℃
T
J
-65 to +125
-65 to +150
℃
T
STG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR5030-SBR5060
FIG.5-MAXIMUM NON-REPETITIVE PEAK
FIG.1-FORWARD CURRENT DERATING CURVE
FORWARD SURGE CURRENT
600
500
50
40
400
300
200
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
── SBR5030-SBR5045
- - - SBR5050-SBR5060
30
20
SINGLE PHASE
HALF WAVE 50Hz
INDUCTIVE OR
RESISTIVE LOAD
10
0
100
0
0
50
100
150
1.0
2.0
5.0
10
20
50
100
LEAD TEMPERATURE (℃)
NUMBER OF CYCLES AT 60Hz
FIG.2-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.3-TYPICAL REVERSE CHARACTERISTICS
100
10
T
C=150℃
SBR5030-SBR5045
TC=125℃
10
1.0
0.1
SBR5050-SBR5060
TC=75℃
1.0
TJ=25℃
TC=25℃
PULSE WIDTH=300
1% DUTY CYCLE
㎲
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.01
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
── SBR5030-SBR5045
- - - SBR5050-SBR5060
0.001
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
SBR5045 相关器件
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SBR5050PFR | MICROSEMI | 50 Amp Schottky Rectifier Pressfit | 获取价格 | |
SBR5050PFRE3 | MICROSEMI | Rectifier Diode, Schottky, 1 Phase, 1 Element, 50A, 50V V(RRM), Silicon, PRESSFIT-1 | 获取价格 | |
SBR5060 | DAESAN | CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS | 获取价格 | |
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