SBR5045

更新时间:2024-09-18 10:25:38
品牌:DAESAN
描述:CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS

SBR5045 概述

CURRENT 50.0 AMPERES VOLTAGE 30 TO 60 VOLTS 电流50.0安培电压30 〜60伏

SBR5045 数据手册

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CURRENT 50.0Amperes  
VOLTAGE 30 to 60 Volts  
SBR5030 THRU SBR5060  
Features  
· Plastic Package has Underwriters Laboratory  
Flammability Classification 94V-0  
· Metal silicon junction, majority carrier conduction  
· Guard ring for overvoltage protection  
· Low power loss, high efficiency  
TO-3P  
.635(16.13)  
.625(15.88)  
.320(8.13)  
.310(7.87)  
.120(3.05)  
.115(2.92)  
.205(5.21)  
.195(4.49)  
DIA.  
· High current capability, Low forward voltage drop  
· High surge capability  
.180(4.53)  
.170(4.32)  
30  
· For use in low voltage, high frequency inverters,  
free wheeling, and polarity protection applications  
· Dual rectifier construction  
.840(21.34)  
.820(20.83)  
.170(4.32)  
.150(3.81)  
.12(3.0)  
.11(2.8)  
· High temperature soldering guaranteed:  
250/10 seconds, 0.17" (4.3mm) from case  
.095  
(2.4)  
.800(20.32)  
.770(19.56)  
.030(0.8)  
.020(0.5)  
.050(1.27)  
.045(1.14)  
Mechanical Data  
.225(5.7)  
.205(5.2)  
· Case : JEDEC TO-3P molded plastic body  
· Terminals : Lead solderable per  
PIN  
PIN  
1
3
PIN  
PIN  
1
3
+
MIL-STD-750, Method 2026  
CASE  
PIN  
CASE  
2
PIN  
2
· Polarity : As marked. No suffix indicates Common  
Cathode, suffix "A" indicates Common Anode  
· Mounting Position : Any  
Positive CT  
Suffix "C"  
Negative CT  
Suffix "A"  
Dimensions in inches and (millimeters)  
· Weight : 0.20ounce, 5.6 grams  
Maximum Ratings and Electrical Characteristics  
(Ratings at 25ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive  
load. For capacitive load, derate by 20%)  
SBR5050  
SBR5060 Units  
Symbols  
SBR5030 SBR5035 SBR5040 SBR5045  
50  
35  
50  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
V
V
RRM  
RMS  
30  
21  
30  
35  
24  
35  
40  
28  
40  
45  
32  
45  
60  
42  
60  
Volts  
Volts  
Volts  
Maximum DC blocking voltage  
VDC  
Maximum average forward rectified current  
at VR(equiv.)<0.2VR(DC) (See Fig 1)  
I(AV  
)
50.0  
Amps  
Amps  
Peak forward surge current 8.3ms single half  
sine-wave superimposed on rated load  
(JEDEC method)  
I
FSM  
400.0  
Maximum instantaneous forward voltage  
at 25A (Note 1)  
V
F
0.65  
100  
0.70  
Volts  
mA  
Maximum instantaneous reverse  
current at rated DC blocking  
voltage (Note1)  
T
T
A
=25  
10.0  
1.4  
I
R
A
=125℃  
150  
Typical thermal resistance (Note 2)  
Operating junction temperature range  
Storage temperature range  
RθJC  
/W  
T
J
-65 to +125  
-65 to +150  
T
STG  
Notes:  
(1) Pulse test: 300μS pulse width, 1% duty cycle  
(2) Thermal resistance from junction to case  
RATINGS AND CHARACTERISTIC CURVES SBR5030-SBR5060  
FIG.5-MAXIMUM NON-REPETITIVE PEAK  
FIG.1-FORWARD CURRENT DERATING CURVE  
FORWARD SURGE CURRENT  
600  
500  
50  
40  
400  
300  
200  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
── SBR5030-SBR5045  
- - - SBR5050-SBR5060  
30  
20  
SINGLE PHASE  
HALF WAVE 50Hz  
INDUCTIVE OR  
RESISTIVE LOAD  
10  
0
100  
0
0
50  
100  
150  
1.0  
2.0  
5.0  
10  
20  
50  
100  
LEAD TEMPERATURE ()  
NUMBER OF CYCLES AT 60Hz  
FIG.2-TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.3-TYPICAL REVERSE CHARACTERISTICS  
100  
10  
T
C=150℃  
SBR5030-SBR5045  
TC=125℃  
10  
1.0  
0.1  
SBR5050-SBR5060  
TC=75℃  
1.0  
TJ=25℃  
TC=25℃  
PULSE WIDTH=300  
1% DUTY CYCLE  
0.1  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0.01  
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
── SBR5030-SBR5045  
- - - SBR5050-SBR5060  
0.001  
20  
40  
60  
80  
100  
120  
140  
PERCENT OF RATED PEAK REVERSE VOLTAGE  

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