SBR760 [DAESAN]
CURRENT 7.5.AMPERES VOLTAGE 35 TO 60 VOLTS; 当前7.5.AMPERES电压35至60伏
| 型号： | SBR760 |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 7.5.AMPERES VOLTAGE 35 TO 60 VOLTS |
| 文件： | 总2页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 7.5Amperes
VOLTAGE 35 to 60 Volts
SBR735 THRU SBR760
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
TO-220A
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25"(6.35mm) from case
.180
HOLE THRU (4.6)
f
3.8 +.2
.412
.050
(1.27)
(10.5)
MAX.
.108
(2.75)
.248
(6.3)
.595
(15.1)
.040
(1.0)
MAX.
MAX.
.550
.051
(1.3)
.040
(1.0)
MAX.
MAX.
(14.0)
.158
(4.0)
MAX.
MIN.
.200
(5.08)
.120
(3.05)
Mechanical Data
+
PIN 1
PIN 2
PIN 1
PIN 2
+
+
CASE
CASE
· Case : JEDEC TO-220A molded plastic body
· Terminals : Lead solderable per
MIL-STD -750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08 ounce, 2.24 gram
Case Negative
Case Positive
Suffix "R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
SBR745
45
Symbols
SBR735
35
SBR750
50
SBR760
60
Units
Volts
Volts
Volts
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
V
25
32
35
42
Maximum DC blocking voltage
VDC
35
45
50
60
Maximum average forward rectified current
(see Fig. 1)
I(AV
)
7.5
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at TC=105℃
IFRM
15.0
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
I
FSM
150.0
Amps
Volts
mA
Maximum instantaneous forward voltage
at 7.5A (Note 1)
V
F
0.65
15
0.75
50
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
=25℃
1.0
2.5
IR
A=125℃
℃/W
℃
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
T
J
-65 to +125
-65 to +150
℃
T
STG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case
RATINGS AND CHARACTERISTIC CURVES SBR735 THRU SBR760
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FIG.1-FORWARD CURRENT DERATING CURVE
FORWARD SURGE CURRENT
175
10
8.0
6.0
4.0
2.0
0
RESISTIVE OR INDUCTIVE LOAD
TJ=TJMAX
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
150
125
100
75
── SBR735--SBR745
- - - SBR750&SBR760
50
25
0
50
100
150
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMPERATURE (℃)
FIG.3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.4-TYPICAL REVERSE CHARACTERISTICS
20
50
── SBR735--SBR745
- - - SBR750&SBR760
10
10
TJ=125℃
TJ=125℃
1
PULSE WIDTH=300
1% DUTY CYCLE
㎲
TJ=25℃
1
0.1
TJ=75℃
0.1
0.01
── SBR735--SBR745
- - - SBR750&SBR760
0.01
T
J
=25℃
0
0.1 0.2 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
4000
TJ=25℃
f=1.0MHz
Vsig=50mVp-p
10
1000
1
── SBR735--SBR745
- - - SBR750&SBR760
100
40
0.1
0.01
0.1
1
10
100
0.1
1
10
100
T, PULSE DURATION, sec.
REVERSE VOLTAGE.VOLTS
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