SS34 [DAESAN]
CURRENT 3.0Amperes VOLTAGE 20 to 100 Volts; 电流3.0安培电压20至100伏特型号: | SS34 |
厂家: | DAESAN ELECTRONICS CORP. |
描述: | CURRENT 3.0Amperes VOLTAGE 20 to 100 Volts |
文件: | 总2页 (文件大小:289K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CURRENT 3.0Amperes
VOLTAGE 20 to 100 Volts
SS32 THRU SS310
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
· Metal silicon junction, majority carrier conduction
· For surface mount applications
DO-214AA (SMB)
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· High surge capability
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds at terminals
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
0.096(2.44)
0.083(2.13)
Mechanical Data
· Case : JEDEC SMB(DO-214AA) molded plastic body
· Terminals : Solder Plate, solderable per
MIL-STD-750, Method 2026
· Polarity : Color band denotes cathode end
· Weight : 0.003 ounce, 0.093 gram
0.008(0.203)
MAX.
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SS32 SS33 SS34 SS35 SS36 SS38 SS39 SS310 Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
RRM
RMS
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
80
56
80
90
63
90
100
70
Volts
Volts
Volts
V
Maximum DC blocking voltage
V
DC
100
Maximum average forward rectified
current 0.375"(9.5mm) lead length(see Fig. 1)
Amps
I(AV
)
3.0
70.0
0.75
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Amps
Volts
Maximum instantaneous forward voltage
at 3.0A (Note 1)
VF
0.55
0.85
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
A
=25℃
2.0
20
I
R
mA
=100℃
℃/W
17
Typical thermal resistance (Note 2)
RθJA
℃
℃
Operating junction temperature range
Storage temperature range
T
J
-50 to +125
-65 to +150
T
STG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance junction to ambient
RATINGS AND CHARACTERISTIC CURVES SS32 THRU SS310
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FIG.2-TYPICAL FORWARDCHARACTERISTICS
3.0
2.5
2.0
1.5
50
10
3. 0
1. 0
1.0
0.5
0
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE (oC)
Tj=25 C
Pulse Width 300us
1% DutyCycle
0. 1
.0 1
FIG.3-MAXIMUM NON-REPETITIVE FORWARDSURGE CURRENT
100
80
60
.1
.3
.5
.7
.9
1 .1 1 .3 1 .5
FORWARD VOLTAGE,(V)
8.3ms Single Half
Tj=25 C
Sine Wave
40
20
0
JEDEC method
FIG.5 - TYPICAL REVERSECHARACTERISTICS
50
1
5
10
100
100
10
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
700
600
500
400
1.0
.1
Tj=75 C
Tj=25 C
300
200
100
0
.01
.01
.05 .1
.5
1
5
10
50 100
0
20
40
60
80
100 120
140
PERCENTAGE RATED PEAK REVERSE VOLTAGE(%)
REVERSE VOLTAGE,(V)
相关型号:
SS34-HE3
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SS34-HE3/9AT
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
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