DS1100LM-75 [DALLAS]

Silicon Delay Line, 1-Func, 5-Tap, True Output, CMOS, PDIP8, 0.300 INCH, DIP-8;
DS1100LM-75
型号: DS1100LM-75
厂家: DALLAS SEMICONDUCTOR    DALLAS SEMICONDUCTOR
描述:

Silicon Delay Line, 1-Func, 5-Tap, True Output, CMOS, PDIP8, 0.300 INCH, DIP-8

光电二极管
文件: 总6页 (文件大小:57K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Preliminary  
DS1100L  
3-Volt 5-Tap Economy Timing  
Element (Delay Line)  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
All-silicon timing circuit  
5-taps equally spaced  
IN  
TAP 2  
TAP 4  
GND  
1
2
3
4
8
7
6
5
VCC  
Delays are stable and precise  
Both leading and trailing edge accuracy  
3V version of the DS1100  
Low-power CMOS  
TTL/CMOS-compatible  
Vapor phase, IR and wave solderable  
Custom delays available  
Fast turn prototypes  
TAP 1  
TAP 3  
TAP 5  
DS1100M 8-PIN DIP (300 MIL)  
DS1100Z 8-PIN SOIC (150 MIL)  
DS1100U 8-PIN MICRO-SOP  
Delays specified over both commercial and  
industrial temperature ranges  
PIN DESCRIPTION  
TAP 1-TAP 5  
- TAP Output Number  
- +5V  
- Ground  
VCC  
GND  
IN  
- Input  
DESCRIPTION  
The DS1100L is a 3-volt version of the DS1100. It is characterized for operation over the range 2.7V to  
3.6V.  
The DS1100L series delay lines have five equally spaced taps providing delays from 4 ns to 300 ns.  
These devices are offered in 8-pin DIPs and surface mount packages to save PC board area. Low cost and  
superior reliability over hybrid technology is achieved by the combination of a 100% silicon delay line  
and industry standard DIP and SOIC packaging. The DS1100L 5-Tap Silicon Delay Line reproduces the  
input logic state at the output after a fixed delay as specified by the extension of the part number after the  
dash. The DS1100L is designed to reproduce both leading and trailing edges with equal precision. Each  
tap is capable of driving up to ten 74LS loads.  
Dallas Semiconductor can customize standard products to meet special needs. For special requests and  
rapid delivery, call (972) 371-4348.  
1 of 6  
102600  
DS1100L  
LOGIC DIAGRAM Figure 1  
DS1100L PART NUMBER DELAY TABLE (all values in ns) Table 1  
NOMINAL DELAYS  
PART #  
DS1100L  
-20  
TAP 1  
4
TAP 2  
8
TAP 3  
12  
TAP 4  
16  
TAP 5  
20  
25  
-25  
5
10  
15  
20  
-30  
6
12  
18  
24  
30  
-35  
7
14  
21  
28  
35  
-40  
8
16  
24  
32  
40  
-45  
9
18  
27  
36  
45  
-50  
-60  
-75  
-100  
-125  
-150  
-175  
-200  
-250  
-300  
10  
12  
15  
20  
25  
30  
35  
40  
50  
60  
20  
24  
30  
40  
50  
60  
70  
80  
30  
36  
45  
60  
75  
90  
105  
120  
150  
180  
40  
48  
60  
80  
100  
120  
140  
160  
200  
240  
50  
60  
75  
100  
125  
150  
175  
200  
250  
300  
100  
120  
TIMING DIAGRAM: SILICON DELAY LINE Figure 2  
2 of 6  
DS1100L  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Pin Relative to Ground  
Operating Temperature  
-1.0V to +7.0V  
-40°C to +85°C  
Storage Temperature  
-55°C to +125°C  
Soldering Temperature  
Short Circuit Output Current  
See J-STD-020A Specification  
50 mA for 1 second  
* This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operation sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods of time may affect reliability.  
DC ELECTRICAL CHARACTERISTICS  
(-40°C to +85°C; VCC = 2.7 – 3.6V)  
PARAMETER  
Supply Voltage  
High Level  
Input Voltage  
Low Level  
Input Voltage  
Input Leakage  
Current  
SYM  
TEST CONDITION  
MIN TYP  
2.7  
MAX  
UNITS NOTES  
VCC  
3.3  
3.6  
V
5
VIH  
VIL  
2.0  
V
5
VCC ± 0.5  
-0.5  
-1.0  
0.8  
V
5
II  
1.0  
10  
-1  
uA  
mA  
mA  
0.0V VI VCC  
VCC=Max; Period=Min.  
VCC=Min. VOH=4  
Active Current  
High Level  
Output Current  
ICC  
IOH  
6, 8  
Low Level  
Output Current  
IOL  
VCC=Min. VOL=0.5  
8
mA  
AC ELECTRICAL CHARACTERISTICS (TA = -40°C to +85°C; VCC = 2.7 to 3.6V)  
PARAMETER  
SYM TEST CONDITION  
MIN  
20% of  
Tap 5  
tPLH  
-2  
TYP  
MAX UNITS  
NOTES  
Input  
Pulse Width  
tWI  
ns  
Input-to-Tap  
25°C 3.3V  
tPLH  
Table 1  
Table 1  
Table 1  
Table 1  
Table 1  
Table 1  
+2  
+3  
+4  
+5  
+3  
+8  
ns  
ns  
ns  
%
%
%
1, 3, 4, 7  
1, 2, 3, 4, 7  
1, 2, 3, 4, 7  
1, 3, 4, 7  
1, 2, 3, 4, 7  
1, 2, 3, 4, 7  
Delay Tolerance  
(Delays 40 ns)  
Input-to-Tap  
Delay Tolerance  
(Delays > 40 ns)  
Output Rise or  
Fall Time  
0°C to 70°C  
tPHL  
-3  
-4  
-5  
-3  
-40°C to +85°C  
25°C 3.3V  
tPLH  
0°C to 70°C  
tPHL  
-40°C to +85°C  
-8  
tOF, tOR  
tPU  
Period  
2.0  
2.5  
ns  
Power-up Time  
Input Period  
200  
us  
ns  
2(tWI)  
CAPACITANCE  
PARAMETER  
Input Capacitance  
(TA = 25°C)  
SYMBOL  
CIN  
MIN  
TYP  
5
MAX  
10  
UNITS  
pF  
NOTES  
3 of 6  
DS1100L  
NOTES:  
1. Initial tolerances are ± with respect to the nominal value at 25°C and VCC = 3.3 volts for both leading  
and trailing edge.  
2. T & V tolerance is with respect to the actual measured (at 25° C and 3.3V) delay value over the stated  
temperature range, and a supply voltage range of 2.7V to 3.6V.  
3. All tap delays tend to vary unidirectionally with temperature or voltage changes. For example, if TAP  
1 slows down, all other taps also slow down; TAP3 can never be faster than TAP2.  
4. Intermediate delay values are available on a custom basis. For further information, call  
(972) 371-4348.  
5. All voltages are referenced to ground.  
6. Measured with outputs open.  
7. See “Test Conditions” section at the end of this data sheet.  
8. ICC values apply to a -20 operating at 1MHz. Longer delays will consume less current.  
TESTCIRCUIT Figure 3  
4 of 6  
DS1100L  
TERMINOLOGY  
Period: The time elapsed between the leading edge of the first pulse and the leading edge of the  
following pulse.  
tWI (Pulse Width): The elapsed time on the pulse between the 1.5V point on the leading edge and the  
1.5V point on the trailing edge or the 1.5V point on the trailing edge and the 1.5V point on the leading  
edge.  
tRISE (Input Rise Time): The elapsed time between the 20% and the 80% point on the leading edge of the  
input pulse.  
tFALL (Input Fall Time): The elapsed time between the 80% and the 20% point on the trailing edge of the  
input pulse.  
tPLH (Time Delay, Rising): The elapsed time between the 1.5V point on the leading edge of the input  
pulse and the 1.5V point on the leading edge of any tap output pulse.  
tPHL (Time Delay, Falling): The elapsed time between the 1.5V point on the trailing edge of the input  
pulse and the 1.5V point on the trailing edge of any tap output pulse.  
TEST SETUP DESCRIPTION  
Figure 3 illustrates the hardware configuration used for measuring the timing parameters on the  
DS1100L. The input waveform is produced by a precision pulse generator under software control. Time  
delays are measured by a time interval counter (20 ps resolution) connected between the input and each  
tap. Each tap is selected and connected to the counter by a VHF switch control unit. All measurements  
are fully automated, with each instrument controlled by a central computer over an IEEE 488 bus.  
TEST CONDITIONS INPUT:  
Ambient Temperature: 25°C ± 3°C  
Supply Voltage (VCC): 53.3V ± 0.1V  
Input Pulse:  
High = 3.0V ± 0.1V  
Low = 0.0V ± 0.1V  
Source Impedance:  
Rise and Fall Time:  
Pulse Width:  
50 Ohm Max.  
3.0 ns Max. (measured between 10% and 90%)  
500 ns  
1 µs  
Period:  
OUTPUT:  
Each output is loaded with the equivalent of one 74F04 input gate. Delay is measured at the 1.5V level on  
the rising and falling edge.  
NOTE:  
Above conditions are for test only and do not restrict the operation of the device under other data sheet  
conditions.  
5 of 6  
DS1100L  
ORDERING INFORMATION  
DS1100  
L
TOTAL TIME DELAY (ns): 20, 25,  
30, 35, 40, 45, 50, 60, 75, 100, 125,  
150, 175, 200, 250, 300  
PACKAGE TYPE:  
M = DIP  
Z = SOIC (150 MIL)  
U = MICRO -SOP  
OPERATING VOLTAGE:  
BLANK: 5V ± 5%  
L: 3V ± 10%  
6 of 6  

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