DS1211 [DALLAS]

Nonvolatile Controller x 8 Chip; 非易失性控制器×8片
DS1211
型号: DS1211
厂家: DALLAS SEMICONDUCTOR    DALLAS SEMICONDUCTOR
描述:

Nonvolatile Controller x 8 Chip
非易失性控制器×8片

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DS1211  
Nonvolatile Controller x 8 Chip  
www.dalsemi.com  
FEATURES  
PIN ASSIGNMENT  
Converts full CMOS RAMs into nonvolatile  
memories  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
VBAT1  
VCCI  
VBAT2  
CE  
VCCO  
Unconditionally write protects when VCC is  
out of tolerance  
Automatically switches to battery when  
power-fail occurs  
3 to 8 decoder provides control for up to eight  
CMOS RAMs  
Consumes less than 100 nA of battery current  
Tests battery condition on power-up  
Provides for redundant batteries  
Power-fail signal can be used to interrupt  
processor on power failure  
Optional 5% or 10% power-fail detection  
Optional 20-pin SOIC surface mount package  
Optional industrial temperature range of  
-40°C to +85°C  
TOL  
PF  
CE0  
VBAT1  
1
2
3
4
5
6
7
8
9
10  
20  
19  
18  
17  
16  
15  
14  
13  
12  
11  
VCCI  
VBAT2  
CE  
CE1  
CE2  
CE7  
CE6  
VCCO  
TOL  
PF  
CE0  
CE1  
CE2  
CE3  
NC  
C
B
CE3  
NC  
CE7  
CE6  
C
A
CE4  
CE5  
B
A
CE4  
CE5  
GND  
GND  
20-Pin DIP (300-mil)  
See Mech. Drawings  
Section  
20-Pin SOIC (300-mil)  
See Mech. Drawings  
Section  
PIN DESCRIPTION  
A, B, C  
- Address Inputs  
- Chip Enable Input  
CE  
CE0 - CE7  
GND  
- Chip Enable Outputs  
- Ground  
VBAT1  
VBAT2  
TOL  
- + Battery 1  
- + Battery 2  
- Power Supply Tolerance  
- +5V Supply  
VCCI  
VCC0  
- RAM Supply  
PF  
- Power-fail  
NC  
- No Connection  
DESCRIPTION  
The DS1211 Nonvolatile Controller x 8 Chip is a CMOS circuit which solves the application problem of  
converting CMOS RAMs into nonvolatile memories. Incoming power is monitored for an out-of-  
tolerance condition. When such a condition is detected, the chip enables are inhibited to accomplish write  
protection and the battery is switched on to supply RAMs with uninterrupted power. Special circuitry  
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery  
consumption.  
By combining the DS1211 nonvolatile controller/decoder chip and lithium batteries, nonvolatile RAM  
operation can be achieved for up to eight CMOS memories.  
See the data sheet for the DS1212 Nonvolatile Controller x 16 Chip for electrical specifications and  
operation.  
1 of 1  
111899  

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