DS1742W-150 [DALLAS]

Y2KC Nonvolatile Timekeeping RAM; Y2KC非易失时钟RAM
DS1742W-150
型号: DS1742W-150
厂家: DALLAS SEMICONDUCTOR    DALLAS SEMICONDUCTOR
描述:

Y2KC Nonvolatile Timekeeping RAM
Y2KC非易失时钟RAM

计时器或实时时钟 微控制器和处理器 外围集成电路 双倍数据速率
文件: 总12页 (文件大小:165K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DS1742  
Y2KC Nonvolatile Timekeeping RAM  
www.dalsemi.com  
PIN ASSIGNMENT  
FEATURES  
Integrated NV SRAM, real time clock,  
crystal, power-fail control circuit and lithium  
energy source  
Clock registers are accessed identical to the  
static RAM. These registers are resident in  
the eight top RAM locations  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
DQ0  
DQ1  
DQ2  
GND  
1
2
3
4
5
6
7
8
24  
23  
22  
21  
20  
19  
18  
17  
16  
15  
14  
13  
VCC  
A8  
A9  
WE  
OE  
A10  
CE  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
Century byte register  
9
10  
11  
12  
Totally nonvolatile with over 10 years of  
operation in the absence of power  
BCD coded century, year, month, date, day,  
hours, minutes, and seconds with automatic  
leap year compensation valid up to the year  
2100  
PIN DESCRIPTION  
A0-A10  
CE  
- Address Inputs  
- Chip Enable  
- Output Enable  
- Write Enable  
- Power Supply Input  
- Ground  
Battery voltage level indicator flag  
Power-fail write protection allows for ±10%  
OE  
VCC power supply tolerance  
WE  
Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
VCC  
GND  
DQ0-DQ7  
- Data Input/Outputs  
Standard JEDEC bytewide 2k x 8 static RAM  
pinout  
Quartz accuracy ±1 minute a month @ 25°C,  
factory calibrated  
ORDERING INFORMATION  
DS1742-XXX  
(5V)  
-70  
70 ns access  
-100 100 ns access  
DS1742W-XXX  
(3.3V)  
-120 120 ns access  
-150 150 ns access  
DESCRIPTION  
The DS1742 is a full function, year 2000-compliant (Y2KC), real-time clock/calendar (RTC) and 2k x 8  
non-volatile static RAM. User access to all registers within the DS1742 is accomplished with a bytewide  
interface as shown in Figure 1. The Real Time Clock (RTC) information and control bits reside in the  
eight uppermost RAM locations. The RTC registers contain century, year, month, date, day, hours,  
minutes, and seconds data in 24-hour BCD format. Corrections for the day of the month and leap year  
are made automatically.  
1 of 12  
091800  
DS1742  
The RTC clock registers are double-buffered to avoid access of incorrect data that can occur during clock  
update cycles. The double buffered system also prevents time loss as the timekeeping countdown  
continues unabated by access to time register data. The DS1742 also contains its own power-fail  
circuitry, which deselects the device when the VCC supply is in an out of tolerance condition. This feature  
prevents loss of data from unpredictable system operation brought on by low VCC as errant access and  
update cycles are avoided.  
CLOCK OPERATIONS-READING THE CLOCK  
While the double-buffered register structure reduces the chance of reading incorrect data, internal updates  
to the DS1742 clock registers should be halted before clock data is read to prevent reading of data in  
transition. However, halting the internal clock register updating process does not affect clock accuracy.  
Updating is halted when a 1 is written into the read bit, bit 6 of the century register, see Table 2. As long  
as a 1 remains in that position, updating is halted. After a halt is issued, the registers reflect the count,  
that is day, date, and time that was current at the moment the halt command was issued. However, the  
internal clock registers of the double-buffered system continue to update so that the clock accuracy is not  
affected by the access of data. All of the DS1742 registers are updated simultaneously after the internal  
clock register updating process has been re-enabled. Updating is within a second after the read bit is  
written to 0. The READ bit must be a zero for a minimum of 500 µs to ensure the external registers will  
be updated.  
DS1742 BLOCK DIAGRAM Figure 1  
DS1742 TRUTH TABLE Table 1  
DQ  
VCC  
MODE  
DESELECT  
WRITE  
POWER  
STANDBY  
ACTIVE  
CE  
VIH  
VIL  
OE  
WE  
X
X
X
VIL  
HIGH-Z  
DATA IN  
DATA OUT  
HIGH-Z  
VCC>VPF  
VIL VIL VIH  
VIL VIH VIH  
READ  
READ  
ACTIVE  
ACTIVE  
CMOS STANDBY  
DATA RETENTION MODE  
VSO<VCC<VPF  
VCC<VSO<VPF  
X
X
X
X
X
X
DESELECT  
DESELECT  
HIGH-Z  
HIGH-Z  
SETTING THE CLOCK  
As shown in Table 2, bit 7 of the century register is the write bit. Setting the write bit to a 1, like the read  
bit, halts updates to the DS1742 registers. The user can then load them with the correct day, date and  
time data in 24-hour BCD format. Resetting the write bit to a 0 then transfers those values to the actual  
clock counters and allows normal operation to resume.  
2 of 12  
DS1742  
STOPPING AND STARTING THE CLOCK OSCILLATOR  
The clock oscillator may be stopped at any time. To increase the shelf life, the oscillator can be turned  
off to minimize current drain from the battery. The OSC bit is the MSB (bit 7) of the seconds registers,  
see Table 2. Setting it to a 1 stops the oscillator.  
FREQUENCY TEST BIT  
As shown in Table 2, bit 6 of the day byte is the frequency test bit. When the frequency test bit is set to  
logic 1 and the oscillator is running, the LSB of the seconds register will toggle at 512 Hz. When the  
seconds register is being read, the DQ0 line will toggle at the 512 Hz frequency as long as conditions for  
access remain valid (i.e., CE low, OE low, WE high, and address for seconds register remain valid and  
stable).  
CLOCK ACCURACY  
The DS1742 is guaranteed to keep time accuracy to within ±1 minute per month at 25°C. The RTC is  
calibrated at the factory by Dallas Semiconductor using nonvolatile tuning elements. The DS1742 does  
not require additional calibration. For this reason, methods of field clock calibration are not available and  
not necessary. Clock accuracy is also effected by the electrical environment and caution should be taken  
to place the RTC in the lowest level EMI section of the PCB layout. For additional information please  
see application note 58.  
DS1742 REGISTER MAP Table 2  
DATA  
ADDRESS  
FUNCTION/RANGE  
B7  
B6  
B5  
10 Year  
B4  
B3  
B2  
B1  
B0  
7FF  
7FE  
7FD  
7FC  
7FB  
7FA  
7F9  
7F8  
YEAR  
MONTH  
DATE  
YEAR  
MONTH  
DATE  
00-99  
X
X
X
X
X
10 Mo  
01-12  
01-31  
01-07  
00-23  
00-59  
00-59  
00-39  
10 Date  
BF  
X
FT  
X
X
X
X
DAY  
HOUR  
DAY  
10 HOUR  
HOUR  
X
10 MINUTES  
10 SECONDS  
MINUTES  
SECONDS  
CENTURY  
MINUTES  
SECONDS  
CONTROL  
OSC  
W
R
10 CENTURY  
R = READ BIT  
X = SEE NOTE BELOW  
FT = FREQUENCY TEST  
BF = BATTERY FLAG  
OSC = STOP BIT  
W = WRITE BIT  
NOTE:  
All indicated “X” bits are not dedicated to any particular function and can be used as normal RAM bits.  
RETRIEVING DATA FROM RAM OR CLOCK  
The DS1742 is in the read mode whenever OE (output enable) is low, WE (write enable) is high, and CE  
(chip enable) is low. The device architecture allows ripplethrough access to any of the address locations  
in the NV SRAM. Valid data will be available at the DQ pins within tAA after the last address input is  
stable, providing that the CE , and OE access times and states are satisfied. If CE , or OE access times  
and states are not met, valid data will be available at the latter of chip enable access (tCEA) or at output  
enable access time (tOEA). The state of the data input/output pins (DQ) is controlled by CE , and OE . If  
the outputs are activated before tAA, the data lines are driven to an intermediate state until tAA. If the  
3 of 12  
DS1742  
address inputs are changed while CE , and OE remain valid, output data will remain valid for output data  
hold time (tOH) but will then go indeterminate until the next address access.  
WRITING DATA TO RAM OR CLOCK  
The DS1742 is in the write mode whenever WE , and CE are in their active state. The start of a write is  
referenced to the latter occurring transition of WE , on CE . The addresses must be held valid throughout  
the cycle. CE , or WE must return inactive for a minimum of tWR prior to the initiation of another read or  
write cycle. Data in must be valid tDS prior to the end of write and remain valid for tDH afterward. In a  
typical application, the OE signal will be high during a write cycle. However, OE can be active provided  
that care is taken with the data bus to avoid bus contention. If OE is low prior to WE transitioning low  
the data bus can become active with read data defined by the address inputs. A low transition on WE will  
then disable the outputs tWEZ after WE goes active.  
DATA RETENTION MODE  
The 5-volt device is fully accessible and data can be written or read only when VCC is greater than VPF  
.
However, when VCC is below the power fail point, VPF  
internal clock registers and SRAM are blocked from any access. At this time the power fail reset output  
signal ( ) is driven active and will remain active until VCC returns to nominal levels. When VCC falls  
,
(point at which write protection occurs) the  
RST  
below the battery switch point VSO (battery supply level), device power is switched from the VCC pin to  
the backup battery. RTC operation and SRAM data are maintained from the battery until VCC is returned  
to nominal levels. The 3.3 volt device is fully accessible and data can be written or read only when VCC is  
greater than VPF  
.
When VCC falls below the power fail point, VPF  
,
access to the device is inhibited. At this  
time the power fail reset output signal (  
) is driven active and will remain active until VCC returns to  
RST  
nominal levels. If VPF is less than Vso  
when VCC drops below VPF If VPF is greater than Vso  
backup supply (VBAT when VCC drops below Vso RTC operation and SRAM data are maintained from  
the battery until VCC is returned to nominal levels. The signal is an open drain output and requires a  
,
the device power is switched from VCC to the backup supply (VBAT  
)
.
,
the device power is switched from VCC to the  
)
.
RST  
pull up. Except for the  
powered down.  
, all control, data, and address signals must be powered down when VCC is  
RST  
BATTERY LONGEVITY  
The DS1742 has a lithium power source that is designed to provide energy for clock activity, and clock  
and RAM data retention when the VCC supply is not present. The capability of this internal power supply  
is sufficient to power the DS1742 continuously for the life of the equipment in which it is installed. For  
specification purposes, the life expectancy is 10 years at 25°C with the internal clock oscillator running in  
the absence of VCC power. Each DS1742 is shipped from Dallas Semiconductor with its lithium energy  
source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than  
VPF, the lithium energy source is enabled for battery backup operation. Actual life expectancy of the  
DS1742 will be much longer than 10 years since no lithium battery energy is consumed when VCC is  
present.  
BATTERY MONITOR  
The DS1742 constantly monitors the battery voltage of the internal battery. The Battery Flag bit (bit 7) of  
the day register is used to indicate the voltage level range of the battery. This bit is not writable and  
should always be a 1 when read. If a 0 is ever present, an exhausted lithium energy source is indicated  
and both the contents of the RTC and RAM are questionable.  
4 of 12  
DS1742  
ABSOLUTE MAXIMUM RATINGS*  
Voltage on Any Pin Relative to Ground  
Operating Temperature  
-0.3V to +6.0V  
0°C to 70°C  
Storage Temperature  
-20°C to +70°C  
Soldering Temperature  
See J-STD-020A Specification (See Note 7)  
* This is a stress rating only and functional operation of the device at these or any other conditions above  
those indicated in the operation sections of this specification is not implied. Exposure to absolute  
maximum rating conditions for extended periods of time may affect reliability.  
OPERATING RANGE  
Range  
Temperature  
VCC  
Commercial  
0°C to +70°C  
3.3V ± 10% or 5V ± 10%  
RECOMMENDED DC OPERATING CONDITIONS (Over the Operating Range)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS NOTES  
Logic 1 Voltage All Inputs  
VCC = 5V ±10%  
VIH  
VIH  
2.2  
2.0  
VCC +0.3V  
VCC +0.3V  
V
V
1
1
VCC = 3.3V ±10%  
Logic 0 Voltage All Inputs  
VCC = 5V ±10%  
VIL  
VIL  
-0.3  
-0.3  
0.8  
0.6  
V
V
1
1
VCC = 3.3V ±10%  
DC ELECTRICAL CHARACTERISTICS  
(Over the Operating Range; VCC = 5.0V ± 10%)  
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS NOTES  
Active Supply Current  
ICC  
15  
50  
mA  
2, 3  
ICC1  
ICC2  
1
1
3
3
mA  
mA  
2, 3  
2, 3  
TTL Standby Current (CE =VIH )  
CMOS Standby Current  
(CE =VCC - 0.2V)  
Input Leakage Current  
(any input)  
Output Leakage Current  
(any output)  
IIL  
IOL  
-1  
-1  
+1  
+1  
µA  
µA  
Output Logic 1 Voltage  
(IOUT = -1.0 mA)  
VOH  
2.4  
1
Output Logic 0 Voltage  
(IOUT = +2.1 mA)  
Write Protection Voltage  
VOL  
VPF  
0.4  
4.50  
1
1
4.25  
V
Battery Switch-over Voltage  
VSO  
VBAT  
1, 4  
5 of 12  
DS1742  
DC ELECTRICAL CHARACTERISTICS  
(Over the Operating Range; VCC = 3.3V ± 10%)  
PARAMETER  
SYMBOL MIN  
TYP  
MAX  
UNITS NOTES  
Active Supply Current  
ICC  
10  
30  
mA  
2, 3  
ICC1  
ICC2  
0.7  
0.7  
2
2
mA  
mA  
2, 3  
2, 3  
TTL Standby Current (CE = VIH )  
CMOS Standby Current  
(CE =VCC - 0.2V)  
Input Leakage Current (any input)  
Output Leakage Current  
(any output)  
IIL  
IOL  
-1  
-1  
+1  
+1  
µA  
µA  
Output Logic 1 Voltage  
(IOUT = -1.0 mA)  
VOH  
2.4  
1
Output Logic 0 Voltage  
(IOUT =2.1 mA)  
Write Protection Voltage  
VOL  
VPF  
VSO  
0.4  
2.97  
1
1
1, 4  
2.80  
V
V
Battery Switch-over Voltage  
VBAT  
or VPF  
READ CYCLE, AC CHARACTERISTICS  
(Over the Operating Range; VCC = 5.0V ± 10%)  
70 ns access 100 ns access  
MIN MAX MIN MAX  
PARAMETER  
SYMBOL  
UNITS NOTES  
Read Cycle Time  
tRC  
70  
5
100  
5
ns  
Address Access Time  
tAA  
tCEL  
tCEA  
tCEZ  
tOEL  
tOEA  
tOEZ  
tOH  
70  
100  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CE to DQ Low-Z  
CE Access Time  
70  
25  
100  
35  
CE Data Off time  
OE to DQ Low-Z  
OE Access Time  
5
5
5
5
35  
25  
55  
35  
OE Data Off Time  
Output Hold from Address  
6 of 12  
DS1742  
READ CYCLE, AC CHARACTERISTICS  
(Over the Operating Range; VCC = 3.3V ± 10%)  
120 ns access 150 ns access  
MIN MAX MIN MAX  
PARAMETER  
SYMBOL  
UNITS NOTES  
Read Cycle Time  
Address Access Time  
tRC  
tAA  
120  
5
150  
5
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
5
5
5
5
5
5
5
5
5
120  
150  
tCEL  
tCEA  
tCEZ  
tOEL  
tOEA  
tOEZ  
tOH  
CE to DQ Low-Z  
CE Access Time  
120  
40  
150  
50  
CE Data Off time  
OE to DQ Low-Z  
OE Access Time  
5
5
5
5
100  
35  
130  
35  
OE Data Off Time  
Output Hold from Address  
READ CYCLE TIMING DIAGRAM  
7 of 12  
DS1742  
WRITE CYCLE, AC CHARACTERISTICS  
(Over the Operating Range; VCC = 5.0V ± 10%)  
70 ns access 100 ns access  
PARAMETER  
SYMBOL MIN MAX MIN MAX UNITS NOTES  
Write Cycle Time  
Address Access Time  
tWC  
tAS  
70  
0
100  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tWEW  
tCEW  
tDS  
50  
60  
30  
0
70  
75  
40  
0
WE Pulse Width  
CE Pulse Width  
Data Setup Time  
Data Hold time  
tDH  
Address Hold Time  
tAH  
5
5
tWEZ  
tWR  
25  
35  
WE Data Off Time  
Write Recovery Time  
5
5
WRITE CYCLE, AC CHARACTERISTICS  
(Over the Operating Range; VCC = 3.3V ± 10%)  
120 ns access 150 ns access  
PARAMETER  
SYMBOL MIN MAX MIN MAX UNITS NOTES  
Write Cycle Time  
Address Setup Time  
tWC  
tAS  
120  
0
150  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tWEW  
tCEW  
tDS  
100  
110  
80  
0
130  
140  
90  
0
WE Pulse Width  
CE Pulse Width  
Data Setup Time  
Data Hold Time  
Address Hold Time  
tDH  
tAH  
0
0
tWEZ  
tWR  
40  
50  
WE Data Off Time  
Write Recovery Time  
10  
10  
8 of 12  
DS1742  
WRITE CYCLE TIMING DIAGRAM, WRITE ENABLE CONTROLLED  
WRITE CYCLE TIMING DIAGRAM, CE CONTROLLED  
POWER-UP/DOWN CHARACTERISTICS  
(Over the Operating Range; VCC = 5.0V ± 10%)  
PARAMETER  
SYMBOL MIN  
TYP  
MAX  
UNITS NOTES  
CE or WE at VIH , Before  
Power-Down  
tPD  
0
s
VCC Fall Time: VPF(MAX) to  
VPF(MIN)  
VCC Fall Time: VPF(MIN) to VSO  
VCC Rise Time: VPF(MIN) to  
VPF(MAX)  
tF  
tFB  
tR  
300  
10  
0
s
s
s
Power-up Recover Time  
Expected Data Retention Time  
(Oscillator On)  
tREC  
tDR  
35  
ms  
10  
years  
5, 6  
9 of 12  
DS1742  
POWER-UP/DOWN WAVEFORM TIMING 5-VOLT DEVICE  
POWER-UP/DOWN CHARACTERISTIC  
(Over the Operating Range; VCC = 3.3V ± 10%)  
PARAMETER  
SYMBOL MIN  
TYP  
MAX  
UNITS NOTES  
CE or WE at VIH , Before  
Power-Down  
VCC Fall Time: VPF(MAX) to  
VPF(MIN)  
VCC Rise Time: VPF(MIN) to  
VPF(MAX)  
tPD  
tF  
0
300  
0
µs  
µs  
tR  
µs  
Power-up Recovery Time  
Expected Data Retention Time  
(Oscillator On)  
tREC  
tDR  
35  
ms  
10  
years  
5, 6  
POWER-UP/DOWN WAVEFORM TIMING 3.3-VOLT DEVICE  
CAPACITANCE  
(TA = 25°C)  
PARAMETER  
Capacitance on all input pins  
Capacitance on all output pins  
SYMBOL MIN  
TYP  
MAX  
7
UNITS NOTES  
CIN  
CO  
pF  
pF  
10  
10 of 12  
DS1742  
AC TEST CONDITIONS  
Output Load:  
Input Pulse Levels:  
100 pF + 1TTL Gate  
0.0 to 3.0 Volts  
Timing Measurement Reference Levels:  
Input: 1.5V  
Output: 1.5V  
Input Pulse Rise and Fall Times: 5 ns  
NOTES:  
1. Voltage referenced to ground.  
2. Typical values are at 25°C and nominal supplies.  
3. Outputs are open.  
4. Battery switch-over occurs at the lower of either the battery voltage or VPF.  
5. Data retention time is at 25°C.  
6. Each DS1742 has a built-in switch that disconnects the lithium source until VCC is first applied by the  
user. The expected tDR is defined as a cumulative time in the absence of VCC starting from the time  
power is first applied by the user.  
7. Real Time Clock Modules can be successfully processed through conventional wave-soldering  
techniques as long as temperature exposure to the lithium energy source contained within does not  
exceed +85°C.  
Post-solder cleaning with water washing techniques is acceptable, provided that  
ultrasonic vibration is not used to prevent damage to the crystal.  
11 of 12  
DS1742  
DS1742 24-PIN PACKAGE  
12 of 12  

相关型号:

DS1742W-150+

Y2KC Nonvolatile Timekeeping RAMwww.
MAXIM

DS1742W-200

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, PDIP24,
DALLAS

DS1742_V01

Y2KC Nonvolatile Timekeeping RAM
MAXIM

DS1743

Y2KC Nonvolatile Timekeeping RAM
DALLAS

DS1743

Y2K-Compliant, Nonvolatile Timekeeping
MAXIM

DS1743

Y2KC Nonvolatile Timekeeping RAM
ARTSCHIP

DS1743-100

Y2KC Nonvolatile Timekeeping RAM
DALLAS

DS1743-100

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, EDIP MODULE-28
MAXIM

DS1743-100+

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, ROHS COMPLIANT, EDIP MODULE-28
MAXIM

DS1743-100IND

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, EDIP MODULE-28
MAXIM

DS1743-100IND+

Real Time Clock, Non-Volatile, 0 Timer(s), CMOS, ROHS COMPLIANT, EDIP MODULE-28
MAXIM

DS1743-70

Y2KC Nonvolatile Timekeeping RAM
DALLAS