DS5002FP_06 [DALLAS]
Secure Microprocessor Chip; 安全微处理器芯片
| 型号： | DS5002FP_06 |
| 厂家： | 
DALLAS SEMICONDUCTOR |
| 描述： | Secure Microprocessor Chip |
| 文件： | 总25页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS5002FP
Secure Microprocessor Chip
www.maxim-ic.com
GENERAL DESCRIPTION
FEATURES
The DS5002FP secure microprocessor chip is a
secure version of the DS5001FP 128k soft
microprocessor chip. In addition to the memory and
I/O enhancements of the DS5001FP, the secure
ꢀ
8051-Compatible Microprocessor for
Secure/Sensitive Applications
Access 32kB, 64kB, or 128kB of NV SRAM for
Program and/or Data Storage
In-System Programming Through On-Chip Serial
Port
microprocessor
chip
incorporates
the
most
sophisticated security features available in any
processor. The security features of the DS5002FP
include an array of mechanisms that are designed to
resist all levels of threat, including observation,
analysis, and physical attack. As a result, a massive
effort is required to obtain any information about
memory contents. Furthermore, the “soft” nature of
the DS5002FP allows frequent modification of the
secure information, thereby minimizing the value of
any secure information obtained by such a massive
effort.
Can Modify Its Own Program or Data Memory in
the End System
ꢀ
Firmware Security Features
Memory Stored in Encrypted Form
Encryption Using On-Chip 64-Bit Key
Automatic True Random Key Generator
Self Destruct Input (SDI)
Optional Top Coating Prevents Microprobe
(DS5002FPM)
Improved Security Over Previous Generations
Protects Memory Contents from Piracy
Crash-Proof Operation
ꢀ
PIN CONFIGURATION
Maintains All Nonvolatile Resources for Over 10
Years in the Absence of Power
Power-Fail Reset
TOP VIEW
Early Warning Power-Fail Interrupt
Watchdog Timer
80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65
ORDERING INFORMATION
P0.4AD4
CE2
1
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
P2.6/A14
CE3
CE4
2
INTERNAL
3
PE2
MICRO
PROBE
SHIELD
Yes
PIN-
4
BA9
BD3
PART
TEMP RANGE
PACKAGE
5
P0.3/AD3
BA8
P2.5/A13
BD2
6
7
P0.2/AD2
BA13
P0.1/AD1
R/W
P2.4/A12
BD1
Dallas
DS5002FPM-16
DS5002FPM-16+
DS5002FMN-16
DS5002FMN-16+
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
80 QFP
80 QFP
80 QFP
80 QFP
8
Semiconductor
DS5002FP
9
P2.3/A11
BD0
Yes
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Yes
Yes
VLI
P0.0/AD0
VCC0
SDI
GND
VCC
P2.2/A10
P2.1/A9
P2.0/A8
XTAL1
XTAL2
P3.7/RD
P3.6/WR
P3.5/TI
PF
MSEL
P1.0
+ Denotes a Pb-free/RoHS-compliant device.
BA14
P1.1
Selector Guide appears at end of data sheet.
BA12
P1.2
BA7
P1.3
PE3
PE4
BA6
VRST
P3.4/T0
25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40
QFP
Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device
may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata.
1 of 25
REV: 072806
DS5002FP Secure Microprocessor Chip
ELECTRICAL SPECIFICATIONS
The DS5002FP adheres to all AC and DC electrical specifications published for the DS5001FP.
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground……………………………………………………….-0.3V to (VCC + 0.5V)
Voltage Range on VCC Relative to Ground……………………………………………………………………-0.3V to +6.0V
Operating Temperature Range………………………………………………………………………………..-40°C to +85°C
Storage Temperature* ...……………………………………………………………………………………..-55LC to +125°C
Soldering Temperature……………………………………………………….....See IPC/JEDEC J-STD-020 Specification
This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time can affect reliability.
*Storage temperature is defined as the temperature of the device when VCC = 0V and VLI = 0V. In this state the contents of SRAM are not
battery-backed and are undefined.
DC CHARACTERISTICS
(VCC = 5V ±10%, TA = 0°C to +70°C.)**
PARAMETER
SYMBOL
VIL
CONDITIONS
MIN
-0.3
2.0
TYP
MAX
+0.8
UNITS
Input Low Voltage
(Note 1)
V
V
Input High Voltage
VIH1
(Note 1)
(Note 1)
VCC + 0.3
Input High Voltage
VIH2
3.5
VCC + 0.3
V
(RST, XTAL1, PROG)
Output Low Voltage at IOL = 1.6mA
(Ports 1, 2, 3, PF)
VOL1
(Notes 1, 13)
(Note 1)
0.15
0.15
4.8
0.45
V
Output Low Voltage at IOL = 3.2mA
(Ports 0, ALE, BA15–0, BD7–0,
VOL2
VOH1
VOH2
IIL
0.45
V
V
R/W, CE1N, CE 1–4, PE 1–4, VRST
Output High Voltage at IOH = -80µA
(Ports 1, 2, 3)
)
(Note 1)
2.4
2.4
Output High Voltage at IOH = -400µA
(Ports 0, ALE, BA15–0, BD7–0,
(Note 1)
4.8
V
R/W, CE1N, CE 1–4, PE 1–4, VRST
Input Low Current
)
-50
µA
µA
VIN = 0.45V (Ports 1, 2, 3)
0°C to +70°C
-500
-600
Transition Current; 1 to 0
VIN = 2.0V (Ports 1, 2, 3)
ITL
-40°C to +85°C
(Note 12)
SDI Input Low Voltage
SDI Input High Voltage
SDI Pulldown Resistor
Input Leakage (Port 0, MSEL)
VILS
VIHS
RSDI
IIL
(Note 1)
0.4
VCCO
60
V
V
(Notes 1, 11)
2.0
25
kΩ
µA
0.45 < VIN < VCC
0°C to +70°C
-40°C to +85°C
(Note 12)
+10
150
40
30
RST Pulldown Resistor
RRE
kΩ
180
RVR
RPR
4.7
40
kΩ
kΩ
VRST Pullup Resistor
PROG Pullup Resistor
0°C to +70°C
(Note 1)
4.25
4.1
4.37
4.37
4.12
4.09
4.5
4.6
Power-Fail Warning Voltage
VPFW
V
-40°C to +85°C
(Notes 1, 12)
0°C to +70°C
(Note 1)
4.00
4.25
Minimum Operating Voltage
Operating Voltage
VCCMIN
VCC
V
V
-40°C to +85°C
(Notes 1, 12)
(Note 1)
3.85
4.25
5.5
VCCMIN
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DS5002FP Secure Microprocessor Chip
DC CHARACTERISTICS (continued)
(VCC = 5V ±10%, TA = 0°C to +70°C.)**
PARAMETER
Lithium Supply Voltage
Operating Current at 16MHz
SYMBOL
VLI
CONDITIONS
MIN
TYP
MAX
4.0
36
UNITS
V
(Note 1)
2.5
ICC
(Note 2)
mA
0°C to +70°C (Note 3)
-40°C to +85°C (Notes 3, 12)
(Note 4)
7.0
8.0
80
Idle Mode Current at 12MHz
IIDLE
mA
Stop Mode Current
Pin Capacitance
ISTOP
CIN
µA
pF
(Note 5)
10
VCC
-0.45
VLI
Output Supply Voltage (VCCO
)
VCCO1
(Notes 1, 2)
V
0°C to +70°C (Notes 1, 8)
Output Supply Battery-Backed
-0.65
VLI
VCCO2
V
Mode (VCCO, CE1–4, PE 1–2)
-40°C to +85°C (Notes 1, 8,
12)
-0.9
Output Supply Current (Note 6)
Lithium-Backed Quiescent
Current (Note 7)
ICCO1
ILI
VCCO = VCC - 0.45V
0°C to +70°C
75
75
mA
nA
5
-40°C to +85°C
75
500
BAT = 3.0V (0°C to +70°C)
(Note 1)
4.0
3.85
4.4
4.25
4.25
4.65
BAT = 3.0V (-40°C to +85°C)
(Notes 1, 12)
Reset Trip Point in Stop Mode
BAT = 3.3V (0°C to +70°C)
(Note 1)
**All parameters apply to both commercial and industrial temperature operation unless otherwise noted.
Note 1:
Note 2:
All voltages are referenced to ground.
Maximum operating ICC is measured with all output pins disconnected; XTAL1 driven with tCLKR, tCLKF = 10 ns, VIL = 0.5V; XTAL2
disconnected; RST = PORT0 = VCC, MSEL = VSS
Idle mode IIDLE is measured with all output pins disconnected; XTAL1 driven with tCLKR,tCLKF = 10ns, VIL = 0.5V; XTAL2
disconnected; PORT0 = VCC, RST = MSEL = VSS
Stop mode ISTOP is measured with all output pins disconnected; PORT0 = VCC; XTAL2 not connected; RST = MSEL = XTAL1 =
VSS
.
Note 3:
Note4:
.
.
Note 5:
Note 6:
Note 7:
Pin capacitance is measured with a test frequency: 1MHz, TA = +25°C.
ICCO1 is the maximum average operating current that can be drawn from VCCO in normal operation.
ILI is the current drawn from VLI input when VCC = 0V and VCCO is disconnected. Battery-backed mode is 2.5V ≤ VBAT ≤ 4.0; VCC
VBAT; VSDI should be ≤ VILS for IBAT max.
≤
Note 8:
Note 9:
VCCO2 is measured with VCC < VLI, and a maximum load of 10µA on VCCO.
Crystal startup time is the time required to get the mass of the crystal into vibrational motion from the time that power is first
applied to the circuit until the first clock pulse is produced by the on-chip oscillator. The user should check with the crystal
vendor for a worst-case specification on this time.
Note 10:
SDI is deglitched to prevent accidental destruction. The pulse must be longer than tSPR to pass the deglitcher, but SDI is not
guaranteed unless it is longer than tSPA
.
Note 11:
Note 12:
Note 13:
VIHS minimum is 2.0V or VCCO, whichever is lower.
This parameter applies to industrial temperature operation.
PF pin operation is specified with VBAT ≥ 3.0V.
AC CHARACTERISTICS—SDI PIN
(VCC = 0V to 5V, TA = 0°C to +70°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
1.3
4
UNITS
4.5V < VCC < 5.5V
SDI Pulse Reject (Note 10)
tSPR
µs
VCC = 0V, VBAT = 2.9V
4.5V < VCC < 5.5V
CC = 0V, VBAT = 2.9V
10
50
SDI Pulse Accept (Note 10)
tSPA
µs
V
3 of 3
DS5002FP Secure Microprocessor Chip
AC CHARACTERISTICS—EXPANDED BUS MODE TIMING SPECIFICATIONS
(VCC = 5V ±10%, TA = 0°C to +70°C.) (Figure 1 and Figure 2)
#
1
PARAMETER
Oscillator Frequency
ALE Pulse Width
SYMBOL
1 / tCLK
tALPW
CONDITIONS
MIN
MAX
UNITS
MHz
ns
1.0
16
2
2tCLK - 40
tCLK - 40
tCLK - 35
6tCLK - 100
6tCLK - 100
3
Address Valid to ALE Low
Address Hold After ALE Low
RD Pulse Width
tAVALL
ns
4
tAVAAV
ns
14
15
tRDPW
tWRPW
ns
ns
WR Pulse Width
12MHz
5tCLK - 165
5tCLK - 105
16
tRDLDV
ns
RD Low to Valid Data In
16MHz
17
18
tRDHDV
tRDHDZ
0
ns
ns
Data Hold after RD High
Data Float after RD High
2tCLK - 70
8tCLK - 150
8tCLK - 90
9tCLK - 165
9tCLK - 105
3tCLK + 50
12MHz
16MHz
12MHz
16MHz
19 ALE Low to Valid Data In
tALLVD
ns
20 Valid Address to Valid Data In
tAVDV
tALLRDL
tAVRDL
tDVWRL
tDVWRH
ns
ns
ns
ns
ns
21
22
23
24
3tCLK - 50
ALE Low to RD or WR Low
Address Valid to RD or WR
Low
4tCLK - 130
tCLK - 60
7tCLK - 150
7tCLK - 90
tCLK-50
Data Valid to WR Going Low
12MHz
16MHz
Data Valid to WR High
25
26
27
tWRHDV
ns
ns
ns
Data Valid after WR High
RD Low to Address Float
RD or WR High to ALE High
tRDLAZ
0
tRDHALH
tCLK - 40
tCLK + 50
Figure 1. Expanded Data Memory Read Cycle
4 of 25
DS5002FP Secure Microprocessor Chip
Figure 2. Expanded Data Memory Write Cycle
AC CHARACTERISTICS—EXTERNAL CLOCK DRIVE
(VCC = 5V ± 10%, TA = 0°C to +70°C.) (Figure 3)
#
PARAMETER
SYMBOL
CONDITIONS
12MHz
MIN
20
MAX
UNITS
28
External Clock High Time
tCLKHPW
ns
16MHz
12MHz
16MHz
12MHz
16MHz
12MHz
16MHz
15
20
29
30
31
External Clock Low Time
External Clock Rise Time
External Clock Fall Time
tCLKLPW
tCLKR
ns
ns
ns
15
20
15
20
15
tCLKF
Figure 3. External Clock Timing
5 of 25
DS5002FP Secure Microprocessor Chip
AC CHARACTERISTICS—POWER CYCLE TIME
(VCC = 5V ±10%, TA = 0°C to +70°C.) (Figure 4)
#
PARAMETER
Slew Rate from VCCMIN to VLI
Crystal Startup Time
SYMBOL
tF
MIN
MAX
UNITS
32
33
34
130
µs
tCSU
(Note 9)
21504
Power-on Reset Delay
tPOR
tCLK
Figure 4. Power Cycle Timing
6 of 25
DS5002FP Secure Microprocessor Chip
AC CHARACTERISTICS—SERIAL PORT TIMING, MODE 0
(VCC = 5V ±10%, TA = 0°C to +70°C.) (Figure 5)
#
PARAMETER
SYMBOL
tSPCLK
tDOCH
MIN
MAX
UNITS
µs
35
36
37
38
39
Serial Port Clock Cycle Time
12tCLK
Output Data Setup to Rising Clock Edge
Output Data Hold after Rising Clock Edge
Clock Rising Edge to Input Data Valid
Input Data Hold after Rising Clock Edge
10tCLK - 133
2tCLK - 117
ns
tCHDO
ns
tCHDV
10tCLK - 133
ns
tCHDIV
0
ns
Figure 5. Serial Port Timing, Mode 0
7 of 25
DS5002FP Secure Microprocessor Chip
AC CHARACTERISTICS—BYTE-WIDE ADDRESS/DATA BUS TIMING
(VCC = 5V ±10%, TA = 0°C to +70°C.) (Figure 6)
#
PARAMETER
SYMBOL
MIN
MAX
UNITS
Delay to Byte-Wide Address Valid from CE1,
40
tCE1LPA
30
ns
CE2, or CE1N Low During Op Code Fetch
41
42
tCEPW
4tCLK - 35
2tCLK - 20
ns
ns
Pulse Width of CE1–4, PE1–4, or CE1N
Byte-Wide Address Hold After CE1, CE2, or
tCE1HPA
CE1N High During Op Code Fetch
Byte-Wide Data Setup to CE1, CE2, or CE1N
43
44
45
46
47
48
49
50
51
tOVCE1H
tCE1HOV
tCEHDA
tCELDA
tDACEH
tCEHDV
tAVRWL
tRWLDV
tCEHDV
1tCLK + 40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
High During Op Code Fetch
Byte-Wide Data Hold After CE1, CE2, or CE1N
High During Op Code Fetch
Byte-Wide Address Hold After CE1–4, PE1–4, or
CE1N High During MOVX
4tCLK - 30
4tCLK - 35
1tCLK + 40
0
Delay from Byte-Wide Address Valid CE1–4,
PE1–4, or CE1N Low During MOVX
Byte-Wide Data Setup to CE1–4, PE1–4, or
CE1N High During MOVX (Read)
Byte-Wide Data Hold After CE1–4, PE1–4, or
CE1N High During MOVX (Read)
Byte-Wide Address Valid to R/W Active During
3tCLK - 35
20
MOVX (Write)
Delay from R/W Low to Valid Data Out During
MOVX (Write)
Valid Data Out Hold Time from CE1–4, PE1–4, or
CE1N High
1tCLK - 15
52
53
tRWHDV
tRWLPW
0
ns
ns
Valid Data Out Hold Time from R/W High
Write Pulse Width (R/W Low Time)
6tCLK - 20
Figure 6. Byte-Wide Bus Timing
8 of 25
DS5002FP Secure Microprocessor Chip
RPC AC CHARACTERISTICS, DBB READ
(VCC = 5V ±10%, TA = 0°C to +70°C.) (Figure 7)
#
PARAMETER
SYMBOL
MIN
0
MAX
UNITS
ns
54
tAR
CS, A0 Setup to RD
55
56
57
58
59
tRA
tRR
tAD
0
ns
ns
ns
ns
ns
CS, A0 Hold After RD
RD Pulse Width
160
130
130
85
CS, A0 to Data Out Delay
RD to Data Out Delay
RD to Data Float Delay
tRD
tRDZ
0
RPC AC CHARACTERISTICS, DBB WRITE
(VCC = 5V ±10%, TA = 0°C to +70°C.) (Figure 7)
#
PARAMETER
SYMBOL
MIN
0
MAX
UNITS
ns
60
tAW
CS, A0 Setup to WR
61A
61B
62
tWA
tWA
tWW
tDW
tWD
0
ns
ns
ns
ns
ns
CS, Hold After WR
A0, Hold After WR
WR Pulse Width
20
160
130
20
63
Data Setup to WR
Data Hold After WR
64
AC CHARACTERISTICS, DMA
(VCC = 5V ±10%, TA = 0°C to +70°C.)
#
PARAMETER
SYMBOL
MIN
MAX
UNITS
65
tACC
0
ns
DACK to WR or RD
66
67
68
tCAC
tACD
tCRQ
0
0
ns
ns
ns
RD or WR to DACK
130
110
DACK to Data Valid
RD or WR to DRQ Cleared
AC CHARACTERISTICS, PROG
(VCC = 5V ±10%, TA = 0°C to +70°C.)
#
PARAMETER
SYMBOL
MIN
48
MAX
UNITS
CLKS
69
tPRA
PROG Low to Active
70
tPRI
48
CLKS
PROG High to Inactive
9 of 25
DS5002FP Secure Microprocessor Chip
Figure 7. RPC Timing Mode
10 of 25
DS5002FP Secure Microprocessor Chip
PIN DESCRIPTION
PIN
NAME
FUNCTION
General-Purpose I/O Port 0. This port is open-drain and cannot drive a logic 1. It requires
external pullups. Port 0 is also the multiplexed expanded address/data bus. When used in
this mode, it does not require pullups.
11, 9, 7, 5,
1, 79, 77,
75
P0.0–P0.7
15, 17, 19,
21, 25, 27,
29, 31
General-Purpose I/O Port 1
P1.0–P1.7
P2.0–P2.7
49, 50, 51,
56, 58, 60,
64, 66
General-Purpose I/O Port 2. Also serves as the MSB of the expanded address bus.
General-Purpose I/O Port Pin 3.0. Also serves as the receive signal for the on-board UART.
This pin should not be connected directly to a PC COM port.
36
P3.0/RXD
P3.1/TXD
General-Purpose I/O Port Pin 3.1. Also serves as the transmit signal for the on-board
UART. This pin should not be connected directly to a PC COM port.
38
General-Purpose I/O Port Pin 3.2. Also serves as the active-low external interrupt 0.
General-Purpose I/O Port Pin 3.3. Also serves as the active-low external interrupt 1.
39
40
41
44
45
46
P3.2/INT0
P3.3/INT1
P3.4/T0
P3.5/T1
P3.6/WR
P3.7/RD
General-Purpose I/O Port Pin 3.4. Also serves as the timer 0 input.
General-Purpose I/O Port Pin 3.5. Also serves as the timer 1 input.
General-Purpose I/O Port Pin. Also serves as the write strobe for Expanded bus operation.
General-Purpose I/O Port Pin. Also serves as the read strobe for Expanded bus operation.
Active-High Reset Input. A logic 1 applied to this pin activates a reset state. This pin is
pulled down internally so this pin can be left unconnected if not used. An RC power-on reset
circuit is not needed and is not recommended.
34
RST
Address Latch Enable. Used to demultiplex the multiplexed expanded address/data bus on
70
ALE
port 0. This pin is normally connected to the clock input on a ’373 type transparent latch.
Crystal Connections. Used to connect an external crystal to the internal oscillator. XTAL1 is
47, 48
XTAL2, XTAL1
the input to an inverting amplifier and XTAL2 is the output.
Logic Ground
Power Supply, +5V
52
13
GND
VCC
V
CC Output. This is switched between VCC and VLI by internal circuits based on the level of
VCC. When power is above the lithium input, power is drawn from VCC. The lithium cell
remains isolated from a load. When VCC is below VLI, the VCCO switches to the VLI source.
VCCO should be connected to the VCC pin of an SRAM.
12
VCCO
Lithium Voltage Input. Connect to a lithium cell greater than VLIMIN and no greater than
VLIMAX as shown in the electrical specifications. Nominal value is +3V.
54
VLI
Byte-Wide Address Bus Bits 14–0. This bus is combined with the nonmultiplexed data bus
(BD7–BD0) to access NV SRAM. Decoding is performed using CE1 to CE4. Therefore, BA15
is not actually needed. Read/write access is controlled by R/W. BA14–0 connect directly to an
8k, 32k, or 128k SRAM. If an 8k RAM is used, BA13 and BA14 are unconnected. If a 128k
SRAM is used, the micro converts CE2 and CE3 to serve as A16 and A15, respectively.
Byte-Wide Data Bus Bits 7–0. This 8-bit bidirectional bus is combined with the
nonmultiplexed address bus (BA14–BA0) to access NV SRAM. Decoding is performed on
CE1 and CE2. Read/write access is controlled by R/W. D7–D0 connect directly to an SRAM,
and optionally to a real-time clock or other peripheral.
16, 8, 18,
80, 76, 4, 6,
20, 24, 26,
28, 30, 33,
35, 37
BA14–BA0
BD7–BD0
71, 69, 67,
65, 61, 59,
57, 55
Read/Write (Active Low). This signal provides the write enable to the SRAMs on the byte-
wide bus. It is controlled by the memory map and partition. The blocks selected as program
(ROM) are write-protected.
10
74
R/W
Active-Low Chip Enable 1. This is the primary decoded chip enable for memory access on
the byte-wide bus. It connects to the chip-enable input of one SRAM. CE1 is lithium-backed.
It remains in a logic-high inactive state when VCC falls below VLI.
CE1
Active-Low Chip Enable 2. This chip enable is provided to access a second 32k block of
memory. It connects to the chip-enable input of one SRAM. When MSEL = 0, the micro
converts CE2 into A16 for a 128k x 8 SRAM. CE2 is lithium-backed and remains at a logic
high when VCC falls below VLI.
2
CE2
CE3
Active-Low Chip Enable 3. This chip enable is provided to access a third 32k block of
memory. It connects to the chip enable input of one SRAM. When MSEL = 0, the micro
converts CE3 into A15 for a 128k x 8 SRAM. CE3 is lithium-backed and remains at a logic
high when VCC falls below VLI.
63
11 of 25
DS5002FP Secure Microprocessor Chip
FUNCTION
PIN
NAME
Active-Low Chip Enable 4. This chip enable is provided to access a fourth 32k block of
memory. It connects to the chip-enable input of one SRAM. When MSEL = 0, this signal is
unused. CE4 is lithium-backed and remains at a logic high when VCC falls below VLI.
Active-Low Peripheral Enable 1. Accesses data memory between addresses 0000h and
3FFFh when the PES bit is set to a logic 1. Commonly used to chip enable a byte-wide real-
time clock such as the DS1283. PE1 is lithium-backed and will remain at a logic high when
VCC falls below VLI. Connect PE1 to battery-backed functions only.
62
CE4
78
3
PE1
PE2
PE3
Active-Low Peripheral Enable 2. Accesses data memory between addresses 4000h and
7FFFh when the PES bit is set to a logic 1. PE2 is lithium-backed and will remain at a logic
high when VCC falls below VLI. Connect PE2 to battery-backed functions only.
Active-Low Peripheral Enable 3. Accesses data memory between addresses 8000h and
BFFFh when the PES bit is set to a logic 1. PE3 is not lithium-backed and can be connected
to any type of peripheral function. If connected to a battery-backed chip, it will need additional
circuitry to maintain the chip enable in an inactive state when VCC < VLI.
22
Active-Low Peripheral Enable 4. Accesses data memory between addresses C000h and
FFFFh when the PES bit is set to a logic 1. PE4 is not lithium-backed and can be connected
to any type of peripheral function. If connected to a battery-backed chip, it will need additional
circuitry to maintain the chip enable in an inactive state when VCC < VLI.
23
32
PE4
Invokes the Bootstrap Loader on Falling Edge. This signal should be debounced so that
only one edge is detected. If connected to ground, the micro enters bootstrap loading on
power-up. This signal is pulled up internally.
PROG
This I/O pin (open drain with internal pullup) indicates that the power supply (VCC) has
fallen below the VCCMIN level and the micro is in a reset state. When this occurs, the
DS5002FP drives this pin to a logic 0. Because the micro is lithium-backed, this signal is
guaranteed even when VCC = 0V. Because it is an I/O pin, it also forces a reset if pulled low
externally. This allows multiple parts to synchronize their power-down resets.
This output goes to a logic 0 to indicate that the micro has switched to lithium backup.
This corresponds to VCC < VLI. Because the micro is lithium-backed, this signal is guaranteed
even when VCC = 0V. The normal application of this signal is to control lithium-powered
current to isolate battery-backed functions from non-battery-backed functions.
Memory Select. This signal controls the memory size selection. When MSEL = +5V, the
DS5002FP expects to use 32k x 8 SRAMs. When MSEL = 0V, the DS5002FP expects to use
a 128k x 8 SRAM. MSEL must be connected regardless of partition, mode, etc.
Self-Destruct Input. An active high on this pin causes an unlock procedure. This results in
the destruction of Vector RAM, Encryption Keys, and the loss of power from VCCO. This pin
should be grounded if not used.
42
43
VRST
PF
14
53
MSEL
SDI
Non-Battery-Backed Version of CE1. It is not generally useful since the DS5002FP cannot
72
73
CE1N
be used with EPROM due to its encryption.
No Connection
N.C.
12 of 25
DS5002FP Secure Microprocessor Chip
DETAILED DESCRIPTION
The DS5002FP implements a security system that is an improved version of its predecessor, the DS5000FP. Like
the DS5000FP, the DS5002FP loads and executes application software in encrypted form. Up to 128kB of
standard SRAM can be accessed by its byte-wide bus. This RAM is converted by the DS5002FP into lithium-
backed nonvolatile storage for program and data. Data is maintained for over 10 years at room temperature with a
very small lithium cell. As a result, the contents of the RAM and the execution of the software appear unintelligible
to the outside observer. The encryption algorithm uses an internally stored and protected key. Any attempt to
discover the key value results in its erasure, rendering the encrypted contents of the RAM useless.
The secure microprocessor chip offers a number of major enhancements to the software security implemented in
the previous generation DS5000FP. First, the DS5002FP provides a stronger software encryption algorithm that
incorporates elements of DES encryption. Second, the encryption is based on a 64-bit key word, as compared to
the DS5000FP’s 40-bit key. Third, the key can only be loaded from an on-chip true random-number generator. As a
result, the true key value is never known by the user. Fourth, a self-destruct input (SDI) pin is provided to interface
to external tamper-detection circuitry. With or without the presence of VCC, activation of the SDI pin has the same
effect as resetting the security lock: immediate erasure of the key word and the 48-byte Vector RAM area. Fifth, an
optional top-coating of the die prevents access of information using microprobing techniques. Finally, customer-
specific versions of the DS5002FP are available that incorporate a one-of-a-kind encryption algorithm.
When implemented as a part of a secure system design, a system based on the DS5002FP can typically provide a
level of security that requires more time and resources to defeat than it is worth to unauthorized individuals who
have reason to try. For a user who wants a preconstructed module using the DS5002FP, RAM, lithium cell, and a
real-time clock, the DS2252T is available and described in a separate data sheet.
BLOCK DIAGRAM
Figure 8 is a block diagram illustrating the internal architecture of the DS5002FP. The DS5002FP is a secure
implementation of the DS5001FP 128k soft microprocessor chip. As a result, it operates in an identical fashion to
the DS5001FP, except where indicated. See the DS5001FP data sheet for operating details.
13 of 25
DS5002FP Secure Microprocessor Chip
Figure 8. Block Diagram
14 of 25
DS5002FP Secure Microprocessor Chip
SECURE OPERATION OVERVIEW
The DS5002FP incorporates encryption of the activity on its byte-wide address/data bus to prevent unauthorized
access to the program and data information contained in the NV RAM. Loading an application program in this
manner is performed by the bootstrap loader using the general sequence described below:
1) Clear security lock.
2) Set memory map configuration as for DS5001FP
3) Load application software
4) Set security lock
5) Exit loader
Loading of application software into the program/data RAM is performed while the DS5002FP is in its bootstrap
load mode. Loading is only possible when the security lock is clear. If the security lock has previously set, then it
must be cleared by issuing the “Z” command from the bootstrap loader. Resetting the security lock instantly clears
the previous key word and the contents of the Vector RAM. In addition, the bootstrap ROM writes 0’s into the first
32k of external RAM.
The user’s application software is loaded into external CMOS SRAM by the “L” command in “scrambled” form
through on-chip encryptor circuits. Each external RAM address is an encrypted representation of an on-chip logical
address. Thus, the sequential instructions of an ordinary program or data table are stored nonsequentially in RAM
memory. The contents of the program/data RAM are also encrypted. Each byte in RAM is encrypted by a key- and
address-dependent encryptor circuit such that identical bytes are stored as different values in different memory
locations.
The encryption of the program/data RAM is dependent on an on-chip 64-bit key word. The key is loaded by the
ROM firmware just prior to the time that the application software is loaded, and is retained as nonvolatile
information in the absence of VCC by the lithium backup circuits. After loading is complete, the key is protected by
setting the on-chip security lock, which is also retained as nonvolatile information in the absence of VCC. Any
attempt to tamper with the key word and thereby gain access to the true program/data RAM contents results in the
erasure of the key word as well as the RAM contents.
During execution of the application software, logical addresses on the DS5002FP that are generated from the
program counter or data pointer registers are encrypted before they are presented on the byte-wide address bus.
Op codes and data are read back and decrypted before they are operated on by the CPU. Similarly, data values
written to the external nonvolatile RAM storage during program execution are encrypted before they are presented
on the byte-wide data bus during the write operation. This encryption/decryption process is performed in real time
such that no execution time is lost as compared to the non-encrypted DS5001FP or 8051 running at the same
clock rate. As a result, operation of the encryptor circuitry is transparent to the application software.
Unlike the DS5000FP, the DS5002FP chip’s security feature is always enabled.
SECURITY CIRCUITRY
The on-chip functions associated with the DS5002FP’s software security feature are depicted in Figure 9.
Encryption logic consists of an address encryptor and a data encryptor. Although each encryptor uses its own
algorithm for encrypting data, both depend on the 64-bit key word which is contained in the Encryption Key
registers. Both the encryptors operate during loading of the application software and also during its execution.
15 of 25
DS5002FP Secure Microprocessor Chip
Figure 9. Security Circuitry
The address encryptor translates each “logical” address, i.e., the normal sequence of addresses that are generated
in the logical flow of program execution, into an encrypted address (or “physical” address) at which the byte is
actually stored. Each time a logical address is generated, either during program loading or during program
execution, the address encryptor circuitry uses the value of the 64-bit key word and of the address itself to form the
physical address, which are presented on the address lines of the RAM. The encryption algorithm is such that there
is one and only one physical address for every possible logical address. The address encryptor operates over the
entire memory range, which is configured during bootstrap loading for access on the byte-wide bus.
As bootstrap loading of the application software is performed, the data encryptor logic transforms the op code,
operand, or data byte at any given memory location into an encrypted representation. As each byte is read back to
the CPU during program execution, the internal data encryptor restores it to its original value. When a byte is
written to the external nonvolatile program/ data RAM during program execution, that byte is stored in encrypted
form as well. The data encryption logic uses the value of the 64-bit key, the logical address to which the data is
being written, and the value of the data itself to form the encrypted data, which is written to the nonvolatile
program/data RAM. The encryption algorithm is repeatable, such that for a given data value, encryption key value,
and logical address the encrypted byte will always be the same. However, there are many possible encrypted data
values for each possible true data value due to the algorithm’s dependency on the values of the logical address
and encryption key.
When the application software is executed, the internal CPU of the DS5002FP operates as normal. Logical
addresses are calculated for op code fetch cycles and also data read and write operations. The DS5002FP has the
ability to perform address encryption on logical addresses as they are generated internally during the normal
course of program execution. In a similar fashion, data is manipulated by the CPU in its true representation.
However, it is also encrypted when it is written to the external program/data RAM, and is restored to its original
value when it is read back.
When an application program is stored in the format described above, it is virtually impossible to disassemble op
codes or to convert data back into its true representation. Address encryption has the effect that the op codes and
data are not stored in the contiguous form in which they were assembled, but rather in seemingly random locations
in memory. This in itself makes it virtually impossible to determine the normal flow of the program. As an added
16 of 25
DS5002FP Secure Microprocessor Chip
protection measure, the address encryptor also generates “dummy” read access cycles whenever time is available
during program execution.
DUMMY READ CYCLES
Like the DS5000FP, the DS5002FP generates a “dummy” read access cycle to non-sequential addresses in
external RAM memory whenever time is available during program execution. This action has the affect of further
complicating the task of determining the normal flow of program execution. During these pseudorandom dummy
cycles, the RAM is read to all appearances, but the data is not used internally. Through the use of a repeatable
exchange of dummy and true read cycles, it is impossible to distinguish a dummy cycle from a real one.
ENCRYPTION ALGORITHM
The DS5002FP incorporates a proprietary algorithm implemented in hardware, which performs the scrambling of
address and data on the byte-wide bus to the SRAM. This algorithm has been greatly strengthened with respect to
its DS5000FP predecessor. Improvements include:
1) 64-bit encryption key
2) Incorporation of DES-like operations to provide a greater degree of nonlinearity
3) Customizable encryption
The encryption circuitry uses a 64-bit key value (compared to the DS5000FP’s 40-bit key), which is stored on the
DS5002FP die and protected by the Security Lock function described below. In addition, the algorithm has been
strengthened to incorporate certain operations used in DES encryption, so that the encryption of both the
addresses and data is highly nonlinear. Unlike the DS5000FP, the encryption circuitry in the DS5002FP is always
enabled.
Dallas Semiconductor can customize the encryption circuitry by laser programming the die to insure that a unique
encryption algorithm is delivered to the customer. In addition, the customer-specific version can be branded as
specified by the customer. Please contact Dallas Semiconductor for ordering information of customer-specific
versions.
ENCRYPTION KEY
As described above, the on-chip 64-bit encryption key is the basis of both the address and data encryptor circuits.
The DS5002FP provides a key management system, which is greatly improved over the DS5000FP. The
DS5002FP does not give the user the ability to select a key. Instead, when the loader is given certain commands,
the key is set based on the value read from an on-chip hardware random number generator. This action is
performed just prior to actually loading the code into the external RAM. This scheme prevents characterization of
the encryption algorithm by continuously loading new, known keys. It also frees the user from the burden of
protecting the key selection process.
The random number generator circuit uses the asynchronous frequency differences of two internal ring oscillator
and the processor master clock (determined by XTAL1 and XTAL2). As a result, a true random number is
produced.
VECTOR RAM
A 48-byte vector RAM area is incorporated on-chip, and is used to contain the reset and interrupt vector code in the
DS5002FP. It is included in the architecture to help insure the security of the application program.
If reset and interrupt vector locations were accessed from the external nonvolatile program/data RAM during the
execution of the program, then it would be possible to determine the encrypted value of known addresses. This
could be done by forcing an interrupt or reset condition and observing the resulting addresses on the byte-wide
address/data bus. For example, it is known that when a hardware reset is applied the logical program address is
forced to location 0000H and code is executed starting from this location. It would then be possible to determine
the encrypted value (or physical address) of the logical address value 0000H by observing the address presented
to the external RAM following a hardware reset. Interrupt vector address relationships could be determined in a
similar fashion. By using the on-chip vector RAM to contain the interrupt and reset vectors, it is impossible to
17 of 25
DS5002FP Secure Microprocessor Chip
observe such relationships. Although it is very unlikely that an application program could be deciphered by
observing vector address relationships, the vector RAM eliminates this possibility. Note that the dummy accesses
mentioned above are conducted while fetching from vector RAM.
The vector RAM is automatically loaded with the user’s reset and interrupt vectors during bootstrap loading.
SECURITY LOCK
Once the application program has been loaded into the DS5002FP’s NV RAM, the security lock can be enabled by
issuing the “Z” command in the bootstrap loader. While the security lock is set, no further access to program/data
information is possible by the on-chip ROM. Access is prevented by both the bootstrap loader firmware and the
DS5002FP encryptor circuits.
Access to the NV RAM can only be regained by clearing the security lock by the “U” command in the bootstrap
loader. This action triggers several events, which defeat tampering. First, the encryption key is instantaneously
erased. Without the encryption key, the DS5002FP is no longer able to decrypt the contents of the RAM. Therefore,
the application software can no longer be correctly executed, nor can it be read back in its true form by the
bootstrap loader. Second, the vector RAM area is also instantaneously erased, so that the reset and vector
information is lost. Third, the bootstrap loader firmware sequentially erases the encrypted RAM area. Lastly, the
loader creates and loads a new random key.
The Security Lock bit itself is constructed using a multiple-bit latch which is interlaced for self-destruct in the event
of tampering. The lock is designed to set-up a “domino-effect” such that erasure of the bit will result in an
unstoppable sequence of events that clears critical data including Encryption Key and Vector RAM. In addition, this
bit is protected from probing by the top-coating feature mentioned below.
SELF-DESTRUCT INPUT
The self-destruct input (SDI) pin is an active-high input that is used to reset the security lock in response to an
external event. The SDI input is intended to be used with external tamper-detection circuitry. It can be activated
with or without operating power applied to the VCC pin. Activation of the SDI pin instantly resets the security lock
and causes the same sequence of events described above for this action. In addition, power is momentarily
removed from the byte-wide bus interface including the VCCO pin, resulting in the loss of data in external RAM.
TOP LAYER COATING
The DS5002FPM is provided with a special top-layer coating that is designed to prevent a probe attack. This
coating is implemented with second-layer metal added through special processing of the microcontroller die. This
additional layer is not a simple sheet of metal, but rather a complex layout that is interwoven with power and
ground, which are in turn connected to logic for the encryption key and the security lock. As a result, any attempt to
remove the layer or probe through it results in the erasure of the security lock and/or the loss of encryption key bits.
BOOTSTRAP LOADING
Initial loading of application software into the DS5002FP is performed by firmware within the on-chip bootstrap
loader communicating with a PC by the on-chip serial port in a manner that is almost identical to that for the
DS5001FP. The user should consult the DS5001FP data sheet as a basis of operational characteristics of this
firmware. Certain differences in loading procedure exist in order to support the security feature. These differences
are documented below. Table 1 summarizes the commands accepted by the bootstrap loader.
When the bootstrap loader is invoked, portions of the 128-byte scratchpad RAM area are automatically overwritten
with 0’s, and then used for variable storage for the bootstrap firmware. Also, a set of 8 bytes are generated using
the random number generator circuitry and are saved as a potential word for the 64-bit encryption key.
Any read or write operation to the DS5002FP’s external program/data SRAM can only take place if the security lock
bit is in a cleared state. Therefore, the first step in loading a program should be the clearing of the security lock bit
through the “U” command.
18 of 25
DS5002FP Secure Microprocessor Chip
Table 1. Serial Bootstrap Loader Commands
COMMAND
FUNCTION
Return CRC-16 of the program/data NV RAM
Dump Intel Hex file
C
D
F
Fill program/data NV RAM
G
I
Get data from P1, P2, and P3
N/A on the DS5002FP
L
Load Intel Hex file
M
N
P
R
T
Toggle modem available bit
Set freshness seal—all program and data is lost
Put data into P0, P1, P2, and P3
Read status of NV SFRs (MCON, RPCTL, MSL, CALIB)
Trace (echo) incoming Intel Hex code
Clear Security Lock
U
V
W
Z
Verify program/data NV RAM with incoming Intel Hex data
Write special function registers (MCON, RPCTL, MSL, CALIB)
Set security lock
Execution of certain bootstrap loader commands result in the loading of the newly generated 64-bit random number
into the encryption key word. These commands are as follows:
Fill
F
L
Load
Dump D
Verify
CRC
V
C
Execution of the Fill and Load commands result in the data loaded into the NV RAM in an encrypted form
determined by the value of the newly generated key word. The subsequent execution of the Dump command within
the same bootstrap session causes the contents of the encrypted RAM to be read out and transmitted back to the
host PC in decrypted form. Similarly, execution of the Verify command within the same bootstrap session causes
the incoming absolute hex data to be compared against the true contents of the encrypted RAM, and the CRC
command returns the CRC value calculated from the true contents of the encrypted RAM. As long as any of the
above commands are executed within the same bootstrap session, the loaded key value remains the same, and
the contents of the encrypted program/data NV RAM can be read or written normally and freely until the security
lock bit is set.
When the security lock bit is set using the Z command, no further access to the true RAM contents is possible
using any bootstrap command or by any other means.
INSTRUCTION SET
The DS5002FP executes an instruction set that is object code-compatible with the industry standard 8051
microcontroller. As a result, software development packages such as assemblers and compilers that have been
written for the 8051 are compatible with the DS5002FP. A complete description of the instruction set and operation
are provided in the Secure Microcontroller User’s Guide.
Also note that the DS5002FP is embodied in the DS2252T module. The DS2252T combines the DS5002FP with
between 32k and 128k of SRAM, a lithium cell, and a real-time clock. This is packaged in a 40-pin SIMM module.
MEMORY ORGANIZATION
Figure 10 illustrates the memory map accessed by the DS5002FP. The entire 64k of program and 64k of data are
potentially available to the byte-wide bus. This preserves the I/O ports for application use. The user controls the
portion of memory that is actually mapped to the byte-wide bus by selecting the program range and data range.
Any area not mapped into the NV RAM is reached by the expanded bus on ports 0 and 2. An alternate
configuration allows dynamic partitioning of a 64k space as shown in Figure 11. Selecting PES = 1 provides
another 64k of potential data storage or memory mapped peripheral space as shown in Figure 12. These
19 of 25
DS5002FP Secure Microprocessor Chip
selections are made using special function registers. The memory map and its controls are covered in detail in the
Secure Microcontroller User’s Guide.
Figure 10. Memory Map in Nonpartitionable Mode (PM = 1)
20 of 25
DS5002FP Secure Microprocessor Chip
Figure 11. Memory Map In Partitionable Mode (PM = 0)
Figure 12. Memory Map with PES = 1
21 of 25
DS5002FP Secure Microprocessor Chip
Figure 13 illustrates a typical memory connection for a system using a 128kB SRAM. Note that in this configuration,
both program and data are stored in a common RAM chip. Figure 14 shows a similar system with using two 32kB
SRAMs. The byte-wide address bus connects to the SRAM address lines. The bidirectional byte-wide data bus
connects the data I/O lines of the SRAM.
Figure 13. Connection to 128k x 8 SRAM
22 of 25
DS5002FP Secure Microprocessor Chip
Figure 14. Connection to 64k x 8 SRAM
POWER MANAGEMENT
The DS5002FP monitors VCC to provide power-fail reset, early warning power-fail interrupt, and switchover to
lithium backup. It uses an internal bandgap reference in determining the switch points. These are called VPFW
,
V
CCMIN, and VLI respectively. When VCC drops below VPFW, the DS5002FP will perform an interrupt vector to location
2Bh if the power-fail warning was enabled. Full processor operation continues regardless. When power falls further
to VCCMIN, the DS5002FP invokes a reset state. No further code execution is performed unless power rises back
above VCCMIN. All decoded chip enables and the R/W signal go to an inactive (logic 1) state. VCC is still the power
source at this time. When VCC drops further to below VLI, internal circuitry switch to the lithium cell for power. The
majority of internal circuits will be disabled and the remaining nonvolatile states will be retained. Any devices
connected VCCO will be powered by the lithium cell at this time. VCCO is at the lithium battery voltage minus
approximately 0.45V (less a diode drop). This drop varies depending on the load. Low-power SRAMs should be
used for this reason. When using the DS5002FP, the user must select the appropriate battery to match the RAM
data retention current and the desired backup lifetime. Note that the lithium cell is only loaded when VCC < VLI. The
Secure Microcontroller User’s Guide has more information on this topic. The trip points VCCMIN and VPFW are listed
in the electrical specifications.
23 of 25
DS5002FP Secure Microprocessor Chip
SELECTOR GUIDE
INTERNAL
STANDARD
Pb-FREE/RoHS
MAX CLOCK
SPEED (MHz)
TEMP RANGE
MICROPROBE
SHIELD
PIN-PACKAGE
PART
COMPLIANT
DS5002FP-16
DS5002FP-16+
0°C to +70°C
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
16
16
16
16
No
Yes
No
80 QFP
80 QFP
80 QFP
80 QFP
DS5002FPM-16 DS5002FPM-16+
DS5002FP-16N DS5002FP-16N+
DS5002FMN-16 DS5002FMN-16+
Yes
PACKAGE INFORMATION
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to
www.maxim-ic.com/DallasPackInfo.)
MM
DIM
MIN
MAX
A
A1
A2
B
C
D
D1
E
E1
e
L
—
3.40
0.25
2.55
0.30
—
2.87
0.50
0.23
24.10
20.10
18.10
14.10
0.13
23.70
19.90
17.70
13.90
0.80 BSC
0.65
0.95
56-G4005-001
24 of 25
DS5002FP Secure Microprocessor Chip
REVISION HISTORY
REVISION
DESCRIPTION
112795
073096
111996
061297
Original release.
Change VCC02 specification from VLI - 0.5 to VLI - 0.65 (PCN F62501).
Update mechanical specifications.
Change VCC01 from VCC - 0.3 to VCC - 0.35.
PF signal moved from VOL2 test specification to VOL1. PCN No. (D72502).
AC characteristics for battery-backed SDI pulse specification added.
Reduced absolute maximum voltage to VCC + 0.5V.
Added note clarifying storage temperature specification is for nonbattery-backed state.
Deleted IBAT specification (Duplicate of ILI specification).
Changed RRE min (industrial temp range) from 40kΩ to 30kΩ.
Changed VPFW max (industrial temp range) from 4.5V to 4.6V.
Added industrial specification for ILI.
051499
Reduced tCE1HOV and tCEHDV from 10ns to 0ns.
052599
062102
100102
Minor revisions and approval.
Update VCCO and ICCO1 specifications to reflect 0.45V internal voltage drop instead of 0.35V.
Ordering information updated.
Reset Trip Point in Stop Mode (DC Characteristics) with BAT = 3.0V was changed to 3.3V (original issue
030403
was 3.3V).
Added Pb-free part numbers to Ordering Information and Selector Guide.
Added Operating Voltage specification. (This is not a new specification because operating voltage is implied
070605
in the testing limits, but rather a clarification.)
Updated Absolute Maximum soldering temperature to reference JEDEC standard.
In the AC Characteristics—SDI Pin table, changed tSPR MAX (in active mode) from 2µs to 1.3µs. This
change is only to correct a documentation error, and does not reflect a change in device operation or any
change in testing.
090805
072806
Removed products from Ordering Information table that do not contain internal micro probe shields.
25 of 25
Maxim/Dallas Semiconductor cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim/Dallas Semiconductor product.
No circuit patent licenses are implied. Maxim/Dallas Semiconductor reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2006 Maxim Integrated Products
The Maxim logo is a registered trademark of Maxim Integrated Products, Inc. The Dallas logo is a registered trademark of Dallas Semiconductor Corporation.
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