DS9502 [DALLAS]
ESD Protection Diode; ESD保护二极管
| 型号： | DS9502 |
| 厂家： | 
DALLAS SEMICONDUCTOR |
| 描述： | ESD Protection Diode |
| 文件： | 总3页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DS9502
ESD Protection Diode
www.dalsemi.com
SPECIAL FEATURES
§ Zener characteristic with voltage snap–back
to protect against ESD hits
SYMBOL AND CONVENTIONS
C
IC
§ High avalanche voltage, low leakage and low
VCA
capacitance avoid signal attenuation
A
§ Compatible to all 5V logic families
PACKAGE OUTLINE
§ Space saving, low inductance TSOC surface
mount package
TSOC SURFACE MOUNT PACKAGE
§ Symmetric dual–port bondout to maximize
1
2
3
6
5
4
energy dissipation in protection device
SIDE VIEW
§ Industrial temperature range
TOP VIEW
3.7 X 4.0 X 1.5 mm
See Mech. Drawings
Section
ORDERING INFORMATION
DS9502P
6-lead TSOC package
DESCRIPTION
This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable
memory modules. The memory chips used for these modules have already a strong ESD–protection
structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than
27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the
DS9502 will eventually fail “short” thus preventing further damage.
During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds
the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher
amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage
is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the
holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a
small leakage current.
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DS9502
DC CHARACTERISTICS Figure 1
DC CHARACTERISTICS DETAIL DRAWING Figure 2
TEST PULSE WAVEFORM Figure 3
TYPICAL APPLICATION Figure 4
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DS9502
PHYSICAL SPECIFICATIONS
Size
See mechanical drawing
0.5 grams
Weight
ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
Storage Temperature
Soldering Temperature
Continuous DC Current Through Package
–40°C to +85°C
–55°C to +125°C
260°C for 10 seconds
80 mA
* This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
ELECTRICAL CHARACTERISTICS
(-40°C to +85°C)
PARAMETER
SYMBOL MIN
TYP
MAX
100
UNITS NOTES
Leakage Current
IL
VAV
30
nA
V
2
1,3
1
Avalanche Voltage
Trigger Voltage
7.4
7.8
VTRIGGER
ITRIGGER
VHOLD
IHOLD
VF
9.0
9.5
V
Trigger Current
600
1000
mA
V
Holding Voltage
5.5
30
1
Holding Current
mA
V
Forward Voltage (-10 mA)
Forward Current (-0.7V)
Maximum Peak Current
Continuous Current Through Diode
-0.7
-10
2.0
-0.8
4
4
5
6
IF
-100
mA
A
IPP
ICC
mA
±160
CAPACITANCE
PARAMETER
(tA=25°C)
UNITS NOTES
SYMBOL MIN
TYP
55
MAX
Junction Capacitance (5V)
Junction Capacitance (0V)
CJ5
CJ0
pF
pF
1
1
100
THERMAL RESISTANCE
PARAMETER
SYMBOL MIN
TYP
MAX
75
UNITS NOTES
Junction To Package
K/W
K/W
RQJC
RQJA
Junction To Ambient
200
NOTES:
1. All voltages are referenced from Cathode to Anode.
2. At 7.0V.
3. At 0.3 mA.
4. Typical values at room temperature.
5. See pulse specification.
6. In either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together,
otherwise +80 mA max).
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