MPS2907A [DAYA]
TO-92 Plastic-Encapsulate Transistors; TO- 92塑封装晶体管
| 型号： | MPS2907A |
| 厂家： | 
DAYA ELECTRIC GROUP CO., LTD. |
| 描述： | TO-92 Plastic-Encapsulate Transistors |
| 文件： | 总2页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TO-92 Plastic-Encapsulate Transistors
TO-92
MPS2907A
TRANSISTOR (PNP)
1. EMITTER
FEATURES
Complementary NPN Type available (MPS2222A)
2. BASE
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
1 2 3
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-60
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-60
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.6
A
PC
0.625
150
W
℃
℃
TJ
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
-60
-60
-5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-10μA,IE=0
IC=-10mA,IB=0
V
IE=-10μA,IC=0
V
VCB=-50V,IE=0
-10
-50
-10
n A
nA
nA
Collector cut-off current
ICEX
VCE=-30V,VEB(off)=-0.5V
VEB=-3V,IC=0
Emitter cut-off current
IEBO
hFE(1)
VCE=-10V,IC=-0.1mA
VCE=-10V,IC=-150mA
VCE=-10V,IC=-500mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
IC=-150mA,IB=-15mA
IC=-500mA,IB=-50mA
VCE=-20V,IC=-50mA,f=100MHz
78
100
52
DC current gain
hFE(2)
300
hFE(3)
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
fT
-0.4
-0.67
-1
V
V
Collector-emitter saturation voltage
V
Base-emitter saturation voltage
Transition frequency
-1.2
V
200
MHz
10
25
Delay time
Rise time
Storage time
Fall time
td
tr
nS
nS
nS
nS
V
CC=-30V,Ic=-150mA,IB1=-15mA
VCC=-6V,Ic=-150mA,
IB1=IB2=-15mA
225
tS
tf
60
CLASSIFICATION OF hFE(2)
Rank
L
H
Range
100-200
200-300
Typical Characteristics
MPS2907A
相关型号：
MPS2907A-H-AP
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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