GP106 [DEC]
1 AMP HIGH RELIABILITY SILICON DIODES; 1 AMP高可靠性硅二极管
| 型号： | GP106 |
| 厂家： | 
DIOTEC ELECTRONICS CORPORATION |
| 描述： | 1 AMP HIGH RELIABILITY SILICON DIODES |
| 文件： | 总2页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. GPDG-101-1B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
1 AMP HIGH RELIABILITY SILICON DIODES
MECHANICAL SPECIFICATION
FEATURES
ACTUAL SIZE OF
DO-41 PACKAGE
SERIES GP100 - GP110
R
PROPRIETARY SOFT GLASS JUNCTION
PASSIVATION FOR SUPERIOR RELIABILITY AND
PERFORMANCE
DO - 41
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
LL
BL
LL
BD (Dia)
EXTREMELY LOW LEAKAGE AT HIGH TEMPERATURES
LOW FORWARD VOLTAGE DROP
Color Band
Denotes
1A at TA = 75 C WITH NO THERMAL RUNAWAY
Cathode
MECHANICAL DATA
Case: JEDEC DO-41, molded epoxy
(U/L Flammability Rating 94V-0)
Terminals: Plated axial leads
LD (Dia)
Soldering: Per MIL-STD 202 Method 208 guaranteed
Polarity: Color band denotes cathode
Mounting Position: Any
Minimum
Maximum
Sym
In
mm
In
mm
5.2
0.160
4.1
2.6
0.205
0.107
BL
BD
0.103
1.00
2.7
25.4
LL
Weight: 0.012 Ounces (0.34 Grams)
LD
0.86
0.028
0.71 0.034
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
PARAMETER (TEST CONDITIONS)
RATINGS
SYMBOL
UNITS
Series Number
Maximum DC Blocking Voltage
Maximum RMS Voltage
V
V
V
VOLTS
Maximum Peak Recurrent Reverse Voltage
Average Forward Rectified Current @ T = 75 C,
Lead length = 0.375 in. (9.5 mm)
I
AMPS
Peak Forward Surge Current ( 8.3 mSec single half sine wave
superimposed on rated load)
I
Maximum Forward Voltage at 1 Amp DC
V
VOLTS
Maximum Full Cycle Reverse Current @ T = 75 C (Note 1)
I
A
@ T
= 25 C
Maximum Average DC Reverse Current
At Rated DC Blocking Voltage
I
@ T = 125 C
Typical Thermal Resistance, Junction to Ambient (Note 1)
R
°C/W
pF
Typical Junction Capacitance (Note 2)
C
Operating and Storage Temperature Range
T
T
°C
H5
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. GPDG-101-2B
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
1 AMP HIGH RELIABILITY SILICON DIODES
RATING & CHARACTERISTIC CURVES FOR SERIES GP100 - GP110
1.2
1.0
0.8
0.6
0.4
0.2
0
0
50
Ambient Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
100
150
180
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
1.0
.1
1.0
0.1
0.1
.01
0
40
0.01
0.6
0.7
08
0.9
1.0
1.1
1.2
1.3
Percent of Rated Peak Reverse Voltage
Instantaneous Forward Voltage (Volts)
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
o
TJ = 25
C
Pulse Duration (Milliseconds)
Reverse Voltage, (Volts)
FIGURE 6. PEAK FORWARD SURGE CURRENT
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
H6
相关型号：
©2020 ICPDF网 联系我们和版权申明