SB400L [DEC]
4 AMP SILICON BRIDGE RECTIFIERS; 4 AMP硅桥式整流器
| 型号： | SB400L |
| 厂家： | 
DIOTEC ELECTRONICS CORPORATION |
| 描述： | 4 AMP SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRSB-400-1C
ABSB-400-1C
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
4 AMP SILICON BRIDGE RECTIFIERS
MECHANICAL SPECIFICATION
FEATURES
ACTUAL SIZE OF
SB4 PACKAGE
SB400L - SB410L
SERIES:
ASB404L - ASB408L
VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM
MECHANICAL STRENGTH AND HEAT DISSIPATION
(Solder Voids: Typical < 2%, Max. < 10% of Die Area)
DT
SB404L
_
C
+
BUILT-IN STRESS RELIEF MECHANISM FOR
SUPERIOR RELIABILITY AND PERFORMANCE
DT
SURGE OVERLOAD RATING TO 200 AMPS PEAK
UL RECOGNIZED - FILE #E124962
RoHS COMPLIANT
D1
D
SB404L
_
+
L1
_
+
L
MECHANICAL DATA
Case: Molded Epoxy (UL Flammability Rating 94V-0)
Terminals: Round silver plated copper pins
Soldering: Per MIL-STD 202 Method 208 guaranteed )
Polarity: Marked on case
B
MILLIMETERS
INCHES
MAX MIN MAX
6.65 0.252 0.262
2.18
1.32 0.048 0.052
5.59 0.180 0.220
19.3
0.750 0.760
SYM
MIN
6.4
A
A1
B
B1
2.06
1.22
4.57
19.1
0.061 0.065
A1
B1
C
A
D
15.62 15.88 0.615 0.625
14.38* n/a 0.566* n/a
27.94 n/a 1.2 n/a
25.4 n/a 1.0 n/a
D1
L
Mounting Position: Any.
L1
Weight: 0.2 Ounces (5.6 Grams)
MAXIMUM RATINGS & ELECTRICAL CHARACTERISTICS
RATINGS
PARAMETER (TEST CONDITIONS)
SYMBOL
UNITS
Series Number
Maximum DC Blocking Voltage
Working Peak Reverse Voltage
Maximum Peak Recurrent Reverse Voltage
V
V
VOLTS
V
RMS Reverse Voltage
V
AMPS
Thermal Energy (Rating for Fusing)
I t
SEC
Peak Forward Surge Current. Single 60Hz Half-Sine Wave
Superimposed on Rated Load (JEDEC Method) T = 150 C
I
AMPS
I
T , T
V
Average Forward Rectified Current @ T = 50 C
Junction Operating and Storage Temperature Range
Minimum Avalanche Voltage
°C
Maximum Avalanche Voltage
V
VOLTS
V
Maximum Forward Voltage (Per Diode) at 4 Amps DC
@ T = 25 C
@T = 125 C
A
Maximum Reverse Current at Rated V
I
Minimum Insulation Breakdown Voltage (Circuit to Case)
V
VOLTS
C/W
Junction to Ambient (Note 1)
Junction to Lead (Note 2)
R
Typical Thermal Resistance
R
E15
DIOTEC ELECTRONICS CORP.
18020 Hobart Blvd., Unit B
Data Sheet No. BRSB-400-2C
ABSB-400-2C
Gardena, CA 90248 U.S.A
Tel.: (310) 767-1052 Fax: (310) 767-7958
4 AMP SILICON BRIDGE RECTIFIERS
RATING & CHARACTERISTIC CURVES FOR SERIES SB400L - SB410L and SERIES ASB404L - ASB408L
5.0
NOTE 1
4.0
3.0
2.0
1.0
60Hz
Resistive or Inductive Loads
NOTE 2
0
0
50
Ambient Temperature, C
FIGURE 1. FORWARD CURRENT DERATING CURVE
100
150
Number of Cycles at 60 Hz
FIGURE 2. MAXIMUM NON-REPETITIVE SURGE CURRENT
10
NOTE 3
1.0
0.1
Percent of Rated Peak Reverse Voltage
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
Instantaneous Forward Voltage (Volts)
FIGURE 4. TYPICAL REVERSE CHARACTERISTICS
FIGURE 3. TYPICAL FORWARD CHARACTERISTIC PER DIODE
NOTES
(1) Bridge Mounted on 3.0" Sq. x 0.11" Thick (7.5cm Sq. x 015cm)
Aluminum Plate
NOTE 4
(2) T = 150 C
(3) T = 25 C; Pulse Width = 300mSec; 1%Duty Cycle
(4) T = 25 C; f = 1 MHz; Vsig = 50mVp-p
Reverse Voltage, (Volts)
FIGURE 5. TYPICAL JUNCTION CAPACITANCE PER DIODE
E16
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