概述
数据手册1N5820-3A-DO-27 概述
3.0 AMP SCHOTTKY BARRIER RECTIFIERS
1N5820-3A-DO-27 数据手册
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PDF下载1N5820 THRU 1N5822
3.0 AMP SCHOTTKY BARRIER RECTIFIERS
VOLTAGE RANGE
20 to 40 Volts
CURRENT
3.0 Ampere
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
DO-27
.220(5.6)
* High surge current capability
* Epitaxial construction
.197(5.0)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
.375(9.5)
.285(7.2)
* Polarity: Color band denotes cathode end
* Mounting position: Any
1.0(25.4)
MIN.
* Weight: 1.10 grams
.052(1.3)
*Both normal and Pb free product are available:
*Normal:80~95% Sn,5~20% Pb
.048(1.2)
DIA.
*Pb free:99 Sn above can meet Rohs enviroment substance
directive request
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1N5820
20
1N5821
30
1N5822
40
UNITS
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
V
V
14
21
28
Maximum DC Blocking Voltage
20
30
40
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=90 C
A
A
3.0
80
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
.475
.500
.525
V
0.5
Maximum DC Reverse Current
Ta=25 C
mA
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note1)
Typical Thermal Resistance RθJA (Note 2)
Operating Temperature Range TJ
Storage Temperature Range TSTG
NOTES:
Ta=100 C
50
mA
pF
C/W
C
250
20
-65 +125
-65 +150
C
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal Resistance Junction to Ambient Vertical PC Board Mounting 0.5"(12.7mm) Lead Length.
RATING AND CHARACTERISTIC CURVES (1N5820 THRU 1N5822)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.0
2.5
2.0
1.5
50
10
3.0
1.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
1.0
0.5
0
20
40
60
80
100
120
140
160
180
200
100
100
Tj=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
100
80
60
40
20
0
.1
.3
.5
.7
.9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
8.3ms Single Half
Tj=25 C
Sine Wave
JEDEC method
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
50
1
5
10
100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
10
1.0
.1
700
600
500
400
Tj=75 C
300
200
100
0
Tj=25 C
.01
.01
.05
.1
.5
1
5
10
50
0
20 40 60 80 100 120 140
REVERSE VOLTAGE,(V)
PERCENTAGE RATED PEAK REVERSE VOLTAGE
1N5820-3A-DO-27 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 1N5820-AP | MCC | 3 Amp Schottky Barrier Rectifier 20 - 40 Volts | 获取价格 |
|
| 1N5820-AP-HF | MCC | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| 1N5820-B | DIODES | 3.0A SCHOTTKY BARRIER RECTIFIERS | 获取价格 |
|
| 1N5820-B | RECTRON | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2 | 获取价格 |
|
| 1N5820-BP | MCC | 3 Amp Schottky Barrier Rectifier 20 - 40 Volts | 获取价格 |
|
| 1N5820-BP-HF | MCC | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-201AD, | 获取价格 |
|
| 1N5820-E3 | VISHAY | DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode | 获取价格 |
|
| 1N5820-E3/1 | VISHAY | DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode | 获取价格 |
|
| 1N5820-E3/100 | VISHAY | DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode | 获取价格 |
|
| 1N5820-E3/23 | VISHAY | DIODE 3 A, 20 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode | 获取价格 |
|
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