ST8550D [DGNJDZ]

PNP Silicon Epitaxial Planar Transistor;


型号：	ST8550D
厂家：	Nanjing International
描述：	PNP Silicon Epitaxial Planar Transistor
文件：	总5页 (文件大小：105K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

8550

PNP Silicon Epitaxial Planar Transistor

for switching and amplifier applications. Especially

suitable for AF-driver stages and low power output

stages.

The transistor is subdivided into four groups, B, C, D

and E, according to its DC current gain. As

complementary type the NPN transistor ST 8050 is

recommended.

On special request, these transistors can be

manufactured in different pin configurations.

TO-92 Plastic Package

Weight approx. 0.19g

Absolute Maximum Ratings (T_a= 25℃)

Symbol

-V_CEO

-V_CBO

-V_EBO

-I_C

Value

Unit

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Current

800

Peak Collector Current

Base Current

-I_CM

-I_B

100

^OC

Power Dissipation

P_tot

625¹⁾

Junction Temperature

T_j

150

Storage Temperature Range

T_S

-55 to +150

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

8550

Characteristics at T_amb=25 ^OC

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

ST 8550B

ST 8550C

ST 8550D

ST 8550E

h_FE

120

160

300

120

200

300

380

at -V_CE=1V, -I_C=100mA

at -V_CE=1V, -I_C=350mA

Collector Cutoff Current

at -V_CB=35V

I_CBO

V_CE(sat)

V_BE(sat)

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

f_T

100

Collector Saturation Voltage

at -I_C=500mA, -I_B=50mA

Base Saturation Voltage

at -I_C=500mA, -I_B=50mA

Collector Emitter Breakdown Voltage

at -I_C=2mA

0.5

1.2

Collector Base Breakdown Voltage

at -I_C=10μA

Emitter Base Breakdown Voltage

at -I_E=100μA

Gain Bandwidth Product

at -V_CE=5V, -I_C=10mA, f=50MHz

Collector Base Capacitance

at -V_CB=10V, f=1MHz

100

MHz

C_CBO

R_thA

Thermal Resistance Junction to Ambient

200¹⁾

K/W

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

8550

Admissible power dissipation

versus ambient temperature

Collector current

versus base emitter voltage

Valid provided that leads are kept at

ambient temperature

at a distance of 2 mm from case

10 ³

ST 8550

0.8

0.6

0.4

0.2

25^oC

-50^oC

10 ²

150 ^oC

typical

limits

at Tamb=25 C

Ptot

-IC

10 ^-1

200 ^oC

2 V

100

Tamb

-VBE

Pulse thermal resistance

versus pulse duration

Valid provided that leads are kept at

ambient temperature

Collector cutoff current

versus ambient temperature

at a distance of 2 mm from case

ST 8550

K/W

10³

ST 8550

-ICES

10²

0.5

rthA

0.2

0.1

0.05

0.02

0.01

0.005

v=0

P^I

10 ^-1

-1

-6

-4

-5

-2

-3

10 S

10 10 10

100

Tamb

8550

DC current gain

versus collector current

Common emitter

collector characteristics

500

ST 8550

1000

0.9

0.85

-V^CE=1V

700

500

400

300

200

100

150 C

300

200

-IC

hFE

0.8

-50 C

100

0.75

-VBE=0.7V

-1

-IC

-VCE

Common emitter

collector characteristics

Common emitter

collector characteristics

100

ST 8550

500

ST 8550

3.2

2.8

0.35

2.4

400

300

200

100

0.3

1.8

1.6

0.25

-IC

1.4

-IC

1.2

0.2

0.8

0.15

0.6

0.4

0.1

-IB=0.05mA

-IB=0.2mA

20V

-VCE

8550

Gain bandwidth product

versus collector current

Collector saturation voltage

versus collector current

0.5

ST 8550

MHz

10 ³

ST 8550

typical

limits

at Tamb=25

Tamb=25 C

f=20MHz

0.4

0.3

0.2

0.1

-Ic

-IB

=10

-VCEsat

-VCE=5V

10 ²

25 C

150 C

-50 C

-1

10 mA

₅10 ²

10 ³mA

-IC

Base saturation voltage

versus collector current

ST 8550

typical

limits

at Tamb=25 C

-Ic

=10

-IB

-VBEsat

-50 C

150 C

-1

10 mA

-IC

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