1N3881-PBF [DIGITRON]
Rectifier Diode;
| 型号： | 1N3881-PBF |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Rectifier Diode |
| 文件： | 总3页 (文件大小：427K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N3879-1N3883
FAST RECOVERY SILICON RECTIFIER
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameters
Symbol
VRWM
VRRM
TJ
1N3879
50V
1N3880
100V
1N3881
200V
1N3882
300V
1N3883
400V
Working peak reverse voltage
Peak repetitive reverse voltage
Operating temperature range
Storage temperature range
Maximum thermal resistance
Mounting torque
50V
100V
200V
300V
400V
-65 to +150°C
-65 to +175°C
Tstg
RθJC
2.0°C/W junction to case
12-15 inch pounds
Weight
.16 ounces (5.0 grams) typical
Add “R” to part numbers for reverse polarity.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameters
Symbol
IF(AV)
IFSM
VFM
IRM
Value
6 Amps
200 Amps
1.40 Volts
15 µA
Test Condition
Average forward current
TC = 100°C, square wave, RθJC = 2.0°C/W
8.3ms, half-sine, TC = 100°C
IFM = 20A: TJ = 25°C*
Maximum surge current
Maximum peak forward voltage
Maximum peak reverse current
Maximum peak reverse current
Maximum reverse recovery time
Typical junction capacitance
VRRM, TJ = 25°C
IRM
3.0 mA
200nS
VRRM, TJ = 150°C
tRR
IF = 1A dc, VR = 30V, di/dt = 25A/µs, TC = 55°C
VR = 10V, f = 1MHz, TJ = 25°C
CJ
115pF
Pulse test: pulse width 300µsec. Duty cycle 2%
Rev. 20150317
1N3879-1N3883
FAST RECOVERY SILICON RECTIFIER
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
DO-4(R)
Marking
Alpha-numeric
Normal polarity
Reverse polarity
Cathode is stud
Anode is stud (add “R” suffix)
DO-4(R)
Inches
Millimeters
Min Max
1.981
Min
Max
A
B
C
D
E
F
-
0.078
-
0.422 0.453 10.719 11.506
-
-
0.405
0.800
-
-
10.287
20.320
0.420 0.440 10.668 11.176
-
-
0.250
0.424
-
-
-
6.350
10.770
-
G
H
0.066
1.676
Rev. 20150317
1N3879-1N3883
FAST RECOVERY SILICON RECTIFIER
High-reliability discrete products
and engineering services since 1977
Rev. 20150317
相关型号：
1N3881PBF
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
VISHAY
1N3881R
Rectifier Diode, 1 Phase, 1 Element, 6A, 200V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
MICROSEMI
1N3881R
Rectifier, Fast Recovery; Max Peak Repetitive Reverse Voltage: 6; Max TMS Bridge Input Voltage: 200; Max DC Reverse Voltage: 15; Package: DO-4R
DIGITRON
©2020 ICPDF网 联系我们和版权申明