1N3889ARHR [DIGITRON]
Rectifier Diode;型号: | 1N3889ARHR |
厂家: | Digitron Semiconductors |
描述: | Rectifier Diode |
文件: | 总4页 (文件大小:794K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N3889-1N3893
FAST RECOVERY RECTIFIER
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Symbol
TJ TSTG
Value
-65 to +175
2.0
Unit
°C
Junction and Storage Temperature Range
Thermal Resistance, Junction to Case
Non “A”
“A”
RθJC
°C/W
1.5
Reverse Voltage
1N3889A/R/AR
1N3890A/R/AR
1N3891A/R/AR
1N3892A/R/AR
1N3893A/R/AR
1N3889A/R/AR
1N3890A/R/AR
1N3891A/R/AR
1N3892A/R/AR
1N3893A/R/AR
1N3889A/R/AR
1N3890A/R/AR
1N3891A/R/AR
1N3892A/R/AR
1N3893A/R/AR
Non “A”
50
100
200
300
400
50
100
200
300
400
50
100
200
300
400
12
VR
V
Working Peak Reverse Voltage
Repetitive Peak Reverse Voltage
VRWM
V(pk)
V
VRRM
Average Forward Current, 180° Conduction Angle, 60Hz half-sine wave
@ TC = 100°C
IO
A
“A”
20
Maximum Non-Repetitive Sinusoidal Surge Current @ TC = 100°C
(8.3ms, half-sine)
Derate linearly 2% of IO/°C for TC > 100°C
Non “A”
“A”
175
250
IFSM
A(pk)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Min
max
Unit
Forward Voltage
VFM
-
1.5
V
IFM = 38A, TC = 25°C(1)
Forward Voltage
VFM
-
-
2.75
10
V
IFM = 250A, TC = 150°C(2)
Reverse Current
VRM = 50V, TC = 25°C
VRM = 100V, TC = 25°C
VRM = 200V, TC = 25°C
VRM = 300V, TC = 25°C
VRM = 400V, TC = 25°C
Reverse Current
1N3889A/R/AR
1N3890A/R/AR
1N3891A/R/AR
1N3892A/R/AR
1N3893A/R/AR
IRM
µA
VRM = 50V, TC = 150°C
VRM = 100V, TC = 150°C
VRM = 200V, TC = 150°C
VRM = 300V, TC = 150°C
VRM = 400V, TC = 150°C
1N3889A/R/AR
1N3890A/R/AR
1N3891A/R/AR
1N3892A/R/AR
1N3893A/R/AR
IRM
-
-
2
mA
Reverse Recovery Time 1N3890, 1N3891, 1N3893 /R
200
150
trr
CJ
ns
pF
1N3890A, 1N3891A, 1N3893A /AR
Junction Capacitance
115 (typ.)
Note 1: Pulse test: pulse width 300µsec. Duty cycle 2%
Note 2: Pulse test: Pulse width 800µsec
Note 3: IF = 1A, VR = 30A, di/dt = 25A, TC = 55°
Note 4: VR = 10V, f = 1Mhz, TJ = 25°C
Rev. 20180130
1N3889-1N3893
FAST RECOVERY RECTIFIER
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
DO-4(R)
Marking
Alpha-numeric
Normal polarity
Reverse polarity
Cathode is stud
Anode is stud (add “R” suffix)
DO-4(R)
Inches
Millimeters
Min Max
1.981
Min
Max
A
B
C
D
E
F
-
0.078
-
0.422 0.453 10.719 11.506
-
-
0.405
0.800
-
-
10.287
20.320
0.420 0.440 10.668 11.176
-
-
0.250
0.424
-
-
-
6.350
10.770
-
G
H
0.066
1.676
Rev. 20180130
1N3889-1N3893
FAST RECOVERY RECTIFIER
High-reliability discrete products
and engineering services since 1977
Rev. 20180130
1N3889-1N3893
FAST RECOVERY RECTIFIER
High-reliability discrete products
and engineering services since 1977
Rev. 20180130
相关型号:
1N3889RPBF
Rectifier Diode, 1 Phase, 1 Element, 12A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
INFINEON
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