1N4046RHR [DIGITRON]
Rectifier Diode;型号: | 1N4046RHR |
厂家: | Digitron Semiconductors |
描述: | Rectifier Diode |
文件: | 总2页 (文件大小:561K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
1N4044-1N4056
HIGH POWER RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
TC = 120°C, square wave, RθJC
0.18°C/W
=
Average Forward Current
IF(AV)
275 Amps
Maximum Surge Current
Max. I2t for fusing
IFSM
I2t
5000 Amps
104125 A2s
1.3 Volts
10mA
8.3ms, half sine, TJ = 190°C
8.3ms
Max. Peak Forward Voltage
Max. Peak Reverse Current
VFM
IRM
IRM
IFM = 300A: TJ = 25°C*
VRRM, TJ = 150°C
VRRM, TJ = 25°C
Max. Reverse Current
75µA
*Pulse test: Pulse width 300µsec. Duty cycle 2%
VOLTAGE RATINGS
Part Number
PIV
50V
1N4044
1N4045
1N4046
1N4047
1N4048
1N4049
1N4050
1N4051
1N4052
1N4053
1N4054
1N4055
1N4056
100V
150V
200V
250V
300V
400V
500V
600V
700V
800V
900V
1000V
THERMAL CHARACTERISTICS
Storage Temperature Range
Tstg
TJ
-65 to +190°C
-65 to +190°C
Operating Junction Temperature Range
Maximum Thermal Resistance
Typical Thermal Resistance
Mounting Torque
RθJC
RθCS
0.18°C/W junction to case
.08°C/W case to sink
300-325 inch pounds
Rev. 20171115
1N4044-1N4056
HIGH POWER RECTIFIERS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
DO-9(R)
Marking
Alpha-numeric
Normal polarity
Reverse polarity
Cathode is stud
Anode is stud (add “R” suffix)
DO-9(R)
Inches
Millimeters
Min Max
134.60 149.90
Min
Max
A
B
C
D
F
G
H
J
K
L
5.300
5.900
2.100
1.120
0.749
0.828
0.400
1.100
0.125
0.755
0.453
0.170
0.530
0.350
1.250
-
-
-
-
-
-
53.340
28.450
19.020
0.793
0.310
-
20.140 21.030
7.870
9.140
27.940
3.180
-
-
-
-
-
19.180
0.275
-
0.470
0.338
1.218
10.740 11.510
4.320
11.940 13.460
8.580 8.890
30.940 31.750
M
N
P
-
Q
Rev. 20171115
相关型号:
1N4047E3
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
1N4047IL
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
1N4047ILE3
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
1N4047R
Rectifier, High Power; Max Peak Repetitive Reverse Voltage: 275; Max TMS Bridge Input Voltage: 200; Max DC Reverse Voltage: 75; Package: DO-9R
DIGITRON
1N4047R
Rectifier Diode, 1 Phase, 1 Element, 275A, 200V V(RRM), Silicon, DO-205AB, DO-9, 1 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明