1N821A-1-PBF [DIGITRON]
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7;
| 型号： | 1N821A-1-PBF |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-7 |
| 文件： | 总2页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N821-1N829A
TEMPERATURE COMPENSATED ZENER
REFERENCE DIODE
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Operating and storage temperature range
-65°C to +175°C
500mW @ TL = 25°C and maximum current lZM OF 70mA.
For optimum voltage-temperature stability, lZ = 7.5mA
(less than 50 mW in dissipated power)
DC power dissipation
Solder temperatures
260°C for 10 s (max)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Voltage temperature
stability
(ΔVZT MAX)
-55°C to = 100°C
(Note 3 and 4)
Maximum
reverse
current
lR @ 3V
Effective
temperature
coefficient
αVZ
Maximum zener
impedance
(Note 2)
Zener Test
Current
lZT
Part number
Zener voltage
(Note 1 and 4)
VZ @ lZT
ZZT @ lZT
VOLTS
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
5.9-6.5
6.2-6.9
5.9-6.5
5.9-6.5
6.2-6.9
5.9-6.5
5.9-6.5
mA
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
7.5
OHMS
15
μA
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
mV
96
96
96
48
48
48
19
19
20
9
%/°C
0.01
1N821
1N821A
1N822†
1N823
10
0.01
15
0.01
15
0.005
0.005
0.005
0.002
0.002
0.002
0.001
0.001
0.001
0.0005
0.0005
1N823A
1N824†
1N825
10
15
15
1N825A
1N826
10
15
1N827
15
1N827A
1N828
10
9
15
10
5
1N829
15
1N829A
10
5
† Double Anode; electrical specifications apply under both bias polarities.
NOTES:
1.
2.
3.
Add a “-1” suffix for internal metallurgical bond.
Zener impedance measured by superimposing 0.75 mA ac rms on 7.5mA dc @ 25°C.
The maximum allowable change observed over the entire temperature range, i.e. the diode voltage will not exceed the specified mV change at
discrete temperature between the established limits.
4.
Voltage measurements to be performed 15 seconds after application of dc current.
Rev. 20160114
1N821-1N829A
TEMPERATURE COMPENSATED ZENER
REFERENCE DIODE
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
DO-7
Marking
Polarity
Body painted, alpha numeric
Cathode Band
Rev. 20160114
相关型号：
1N821A-1E3TR
Zener Diode, 6.2V V(Z), 4.84%, 0.5W, Silicon, DO-204AA, HERMETIC SEALED, GLASS, DO-7, 2 PIN
MICROSEMI
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