1N963BHR [DIGITRON]

Zener Diode;


型号：	1N963BHR
厂家：	Digitron Semiconductors
描述：	Zener Diode
文件：	总4页 (文件大小：754K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N957B-1N992B

500 mW SILICON ZENER DIODES

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Value

Operating temperature

Storage temperature

-65°C to +175°C

250°C/W junction to lead at 3/8” lead length from body, or 310°C/W junction to ambient when mounted on

FR4 PC board⁽¹⁾

Thermal resistance

Steady-state power

≤ 25°C when mounted on FR4 PC board⁽¹⁾

0.5W at T_L≤ 50°C 3/8” from body or 0.48W at T_A

@ 200 mA: 1.1 volts maximum (1N957B-1N985B)

@ 200mA: 1.3 volts maximum (1N985-1N992B)

260°C for 10 s maximum

Forward voltage

Solder temperature

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Nominal

Maximum Maximum

Zener

zener

Maximum

temperature

coefficient

DC zener

surge

Maximum reverse

leakage current

test

Maximum zener impedance⁽³⁾

Part

voltage

(2)

current

(4)

current

(5)

current

number

(1)

V_Z

Volts

6.8

7.5

8.2

9.1

I_ZT

18.5

16.5

15.0

14.0

12.5

11.5

10.5

9.5

Z_ZT@ I_ZT

Ohms

4.5

5.5

6.5

7.5

8.5

9.5

11.5

Z_ZK

Ohms

700

@I_ZK

I_ZM

9.5

8.8

I_ZSM

300

275

250

225

200

175

160

150

130

120

110

100

I_R

µA

150

@V_R

Volts

5.2

α_vz

%/°C

0.05

1N957B

1N958B

1N959B

1N960B

1N961B

1N962B

1N963B

1N964B

1N965B

1N966B

1N967B

1N968B

1N969B

1N970B

1N971B

1N972B

1N973B

1N974B

1N975B

1N976B

1.0

700

0.5

5.7

0.058

0.065

0.068

0.075

0.076

0.077

0.079

0.082

0.083

0.085

0.086

0.087

0.088

0.090

0.091

0.092

0.093

0.094

0.095

700

0.5

6.2

700

0.5

6.9

700

0.25

7.6

700

8.4

700

9.1

700

9.9

8.5

700

11.4

12.2

13.7

15.2

16.7

18.2

20.6

22.8

25.1

27.4

29.7

32.7

7.8

700

7.0

750

6.2

750

5.6

750

5.2

750

4.6

750

4.2

1000

1500

3.8

3.4

3.2

3.0

Rev. 20150825

1N957B-1N992B

500 mW SILICON ZENER DIODES

High-reliability discrete products

and engineering services since 1977

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Nominal

zener

voltage

(2)

Maximum Maximum

Zener

test

current

Maximum

temperature

coefficient

DC zener

surge

Maximum reverse

leakage current

Maximum zener impedance⁽³⁾

Part

current

(4)

current

(5)

number

(1)

V_Z

Volts

I_ZT

2.7

Z_ZT@ I_ZT

Ohms

105

Z_ZK

@I_ZK

I_ZM

7.9

7.4

6.8

6.0

5.5

5.0

4.6

4.1

3.7

3.3

3.1

2.7

2.4

2.2

2.0

1.8

I_ZSM

I_R

µA

@V_R

Volts

35.8

38.8

42.6

47.1

51.7

56.0

62.2

69.2

76.0

83.6

91.2

98.8

114.0

121.6

136.8

152.0

α_vz

Ohms

1500

2000

3000

4000

4500

5000

6000

6500

7100

8000

%/°C

0.095

0.096

0.097

0.098

0.099

0.110

1N977B

1N978B

1N979B

1N980B

1N981B

1N982B

1N983B

1N984B

1N985B

1N986B

1N987B

1N988B

1N989B

1N990B

1N991B

1N992B

0.25

2.5

125

2.2

150

2.0

185

1.8

230

1.7

270

1.5

330

1.4

400

100

110

120

130

150

160

180

200

1.3

500

1.1

750

1.0

900

0.95

0.85

0.80

0.68

0.65

1100

1500

1700

2200

2500

NOTE 1. Zener voltage tolerance on ‘’B’’ suffix is + 5%. Suffix letter A denotes +10%. No suffix denotes +20% tolerance. ‘’C’’ suffix denotes + 2% and ‘’D’’ suffix denotes + 1%.

NOTE 2. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C.

NOTE 3. Zener impedance is derived by superimposing on I_ZTA60HZ rms a.c. current equal to 10% of I_ZT

NOTE 4: The values of I_ZMare calculated for a ±5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above V_ZTwhich results from zener impedance

and the increase in junction temperature as power dissipation approaches 400mW. In the case of individual diodes I_ZMis that value of current which results in a dissipation of 400mW at 75°C

lead temperature at 3/8” from body.

NOTE 5: The surge for I_ZMis a square wave or equivalent half-sine wave pulse of 1/120 second duration.

Rev. 20150825

1N957B-1N992B

500 mW SILICON ZENER DIODES

High-reliability discrete products

and engineering services since 1977

MECHANICAL CHARACTERISTICS

Case

DO-35

Marking

Polarity

Body painted, alph-numeric

Cathode band

Rev. 20150825

1N957B-1N992B

500 mW SILICON ZENER DIODES

High-reliability discrete products

and engineering services since 1977

Rev. 20150825

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