2N1872AS-PBF [DIGITRON]
Silicon Controlled Rectifier;
| 型号： | 2N1872AS-PBF |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier |
| 文件： | 总5页 (文件大小：493K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N1870AS-2N1874AS
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Ratings
Symbol
VDRM
2N1870AS
2N1871AS
2N1872AS
100
2N1873AS
150
2N1874AS
200
Unit
V
Repetitive peak off state voltage
Repetitive peak reverse voltage
30
30
60
60
VRRM
100
150
200
V
DC on state current
100°C ambient
100°C case
IT
250
1.25
mA
A
Repetitive peak on state current
ITRM
ITSM
Up to 30
A
Peak one cycle surge (non-repetitive) on
state current
15
A
Peak gate current
IGM
IG(AV)
VGR
250
mA
mA
V
Average gate current
25
Reverse gate voltage
5
20
Thermal resistance, junction to case
Operating and storage temperature range
RӨJC
°C/W
°C
TJ, Tstg
-65 to 150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Test
Symbol
Min.
Typ.
Max.
Units
Test Conditions
25°C tests
Off-state current
Reverse current
Gate trigger voltage
Gate trigger current
On-state voltage
IDRM
IRRM
VGT
-
-
0.5
0.5
0.55
30
1.8
-
10
10
0.8
200
2.5
-
µA
µA
V
RGK = 1K, VDRM = +rating
RGK = 1K, VRRM = - rating
RGS = 100ohms, VD = 5V
RGS > 10K ohms, VD = 5V
ITM = 2A (pulse test)
0.4
-
IGT
µA
V
VTM
dvc/dt
IGR
-
Off-state voltage – critical rate of rise
Reverse gate current
100
-
V/µs
µA
mA
Specified test circuit
VGRM = 5V, anode open
IG = -150µA, VD = 5V
0.5
-
10
5.0
Holding current
IH
0.3
125°C tests
High temperature off state current
High temperature reverse current
High temperature gate non-trigger voltage
High temperature holding current
-65 °C tests
IDRM
IRRM
VGD
IH
-
15
15
-
100
µA
µA
V
RGK = 1K, VDRM = + rating
RGK = 1K, VRRM = - rating
RGS = 100 ohms, VD = 5V
IG = -150µA, VD = 5V
-
100
0.2
0.2
-
-
-
mA
Low temperature gate trigger voltage
Low temperature gate trigger current
Low temperature holding current
VGT
IGT
IH
-
-
-
-
-
-
1.0
500
15
V
RGK = 100 ohms, VD = 5V
RGK > 10K ohms, VD = 5V
IG = -150µA, VD = 5V
µA
mA
Voltage ratings apply over the full operating temperature range provided the gate is connected to the cathode through a resistor, 1K or smaller, or other adequate gate bias is used.
Rev. 20161031
2N1870AS-2N1874AS
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case:
TO-39
Marking:
Pin out:
Alpha numberic
See below
Rev. 20161031
2N1870AS-2N1874AS
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
TRIGGER AND BIAS STABILIZATION
GATE TRIGGER CURRENT
HOLDING CURRENT
GATE TRIGGER VOLTAGE
MAXIMUM HOLDING CURRENT
(CURRENT BIAS)
MAXIMUM HOLDING CURRENT
(RESISTOR BIAS)
Rev. 20161031
2N1870AS-2N1874AS
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
HOLDING CURRENT
MINIMUM HOLDING CURRENT
(CURRENT BIAS)
MINIMUM HOLDING CURRENT
(RESISTOR BIAS)
CURRENT RATINGS – THERMAL DESIGN
ON-STATE CURRENT VS VOLTAGE
PEAK CURRENT VS. CASE TEMPERATURE
Rev. 20161031
2N1870AS-2N1874AS
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
CURRENT RATINGS – THERMAL DESIGN
PEAK CURRENT VS. AMBIENT TEMPERATURE
SURGE CURRENT VS. TIME
AVERAGE CURRENT VS. CASE TEMPERATURE
AVERAGE CURRENT VS. AMBIENT TEMPERATURE
Rev. 20161031
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