2N1879 [DIGITRON]
1.25 AMP SILICON CONTROLLED RECTIFIER;
| 型号： | 2N1879 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | 1.25 AMP SILICON CONTROLLED RECTIFIER |
| 文件： | 总2页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D I G I T R O N S E M I C O N D U C T O R S
2N1875-2N1880
1.25 AMP SILICON CONTROLLED RECTIFIER
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Symbol 2N1875
2N1876
30
2N1877
60
2N1878
100
2N1879
150
2N1880
200
Unit
V
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM
VRRM
15
15
30
60
100
150
200
V
DC on-state current
100°C ambient
100°C case
IT
250
mA
A
1.25
Repetitive peak on-state current
ITRM
ITSM
Up to 30
A
Peak one cycle surge (non-repetitive)
on-state current
15
A
Peak gate current
IGM
IG(AV)
VGR
250
25
5
mA
mA
V
Average gate current
Reverse gate voltage
Thermal resistance, junction to case
RӨJC
20
°C/W
Operating and storage temperature
range
TJ, Tstg
-65 to 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
Test Condition
Subgroup 2 (25°C test)
Off-state current
Reverse current
IDRM
IRRM
IGR
IGT
VGT
IAT
-
-
0.5
0.5
0.5
5
5
10
10
20
0.60
-
µA
µA
µA
µA
V
VDRM = rating, RGK = 1KΩ
VRRM = rating
Reverse gate current
Gate trigger current
Gate trigger voltage
Anode trigger current
On-state voltage
-
VGR = 2V
-
VD = 5V, RGS = 10KΩ
VD = 5V, RGS = 100Ω
VD = 5V
0.44
-
0.52
100
1.8
1.0
(1)
µA
V
VT
0.8
0.3
2.5
3
IT = 2A(pulse test)
IG = -150µA, VAA = 5V
Holding current
IH
mA
Subgroup 3 (25°C test)
Turn-on time
ton
toff
-
-
-
0.1
0.5
0.5
-
-
-
µs
µs
µs
IG = 20mA, IT = 0.5A,
VD = 30V
Turn-off time
Gate trigger – on pulse width
tpg(on)
IT = 0.5A, IR = 0.5A,
Circuit commutated turn-off time
tq
-
10
-
µs
RGK = 1KΩ
Subgroup 4 (125°C test)
High temperature off-state current
IDRM
IRRM
-
-
5
20
µA
µA
VD = rating, RGK = 1KΩ
High temperature reverse current
15
100
VRRM = rating
Note 1: For a maximum limit of 50µA, use suffix “-1” and drop 2N.
Voltage ratings apply over the operating temperature range, provided the gate is connected to the cathode through an appropriate resistor, or adequate gate bias is used.
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130116
D I G I T R O N S E M I C O N D U C T O R S
2N1875-2N1880
SILICON CONTROLLED RECTIFIER
MECHANICAL CHARACTERISTICS
Case
TO-5
Marking
Pin out
Body painted, alpha-numeric
See below
TO-5
Inches
Min Max
Millimeters
Dim
Min
8.510
7.750
6.100
38.100
0.410
0.410
2.540
0.740
0.710
0.230
Max
9.400
8.510
6.600
-
HD
CD
CH
LL
LD
LU
P
0.335 0.370
0.305 0.335
0.240 0.260
1.500
-
0.016 0.021
0.016 0.019
0.530
0.480
-
0.100
-
TL
TW
TH
LO
α
0.029 0.045
0.028 0.034
0.009 0.125
0.141 NOM
1.140
0.860
3.180
3.590 NOM
45°TP
45°TP
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
144 Market Street
Kenilworth NJ 07033 USA
Rev. 20130116
相关型号：
2N1889
Small Signal Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-5,
APITECH
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