2N4174 [DIGITRON]
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 5; Max DC Reverse Voltage: 2; Capacitance: 30; Package: TO-64;
| 型号： | 2N4174 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 5; Max DC Reverse Voltage: 2; Capacitance: 30; Package: TO-64 栅 栅极 |
| 文件： | 总4页 (文件大小：794K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage
2N4167
2N4168
2N4169
2N4170
2N4172
2N4174
25
50
100
200
400
600
VDRM, VRRM
V
Forward current RMS
IT(RMS)
ITSM
8
A
A
Peak forward surge current
(one cycle, 60Hz, TJ = -40 to +100°C)
100
Circuit fusing (t = 8.3ms)
Peak gate power
I2t
PGM
PG(AV)
IGM
40
A2s
W
5
Average gate power
Peak gate current
0.5
W
2
10
A
Peak gate voltage
VGM
TJ
V
Operating temperature range
Storage temperature range
Stud torque
-40 to +100
-40 to +150
15
°C
Tstg
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ.
Max
Unit
Thermal resistance, junction to case
RӨJC
1.5
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak forward or reverse blocking current
(Rated VDRM or VRRM, gate open)
TC = 25°C
IDRM, IRRM
-
-
-
-
10
2
µA
mA
TC = 100°C
Gate trigger current (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, TC = -40°C)
IGT
-
-
10
-
30
60
mA
Gate trigger voltage (continuous dc)
(VD = 7V, RL = 100Ω)
(VD = 7V, RL = 100Ω, TC = -40°C)
(VD = 7V, RL = 100Ω, TC = 100°C)
-
-
0.75
-
-
1.5
2.5
-
VGT
V
V
0.2
Forward “on” voltage (pulsed, 1ms max., duty cycle ≤ 1%)
(ITM = 15.7A)
VTM
-
1.4
2
Rev. 20130108
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Characteristic
Symbol
Min
Typ
Max
Unit
Holding current
IH
mA
(VD = 7V, gate open)
(VD = 7V, gate open, TC = -40°C)
-
-
10
-
30
60
Turn-on time (td+tr)
(IG = 20mA, IF = 5A, VD = rated VDRM
ton
µs
µs
)
-
1
-
Turn-off time
toff
(IF = 5A, IR = 5A)
(IF = 5A, IR = 5A, TC = 100°C, VD = rated VDRM
(dv/dt = 30V/µs)
-
-
15
25
-
-
)
Forward voltage application rate (exponential)
dv/dt
V/µs
(Gate open, TC = 100°C, VD = rated VDRM
)
-
50
-
MECHANICAL CHARACTERISTICS
Case:
TO-64
Marking:
Pin out:
Alpha-Numeric
See below
Rev. 20130108
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130108
2N4167-2N4174
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
Rev. 20130108
相关型号：
2N4187
Silicon Controlled Rectifier, 8A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, CASE 87L-01, 3 PIN
MOTOROLA
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