2N494-PBF [DIGITRON]
Unijunction Transistor;
| 型号： | 2N494-PBF |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Unijunction Transistor |
| 文件： | 总7页 (文件大小：677K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
FEATURES
•
•
•
•
•
•
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
Stable operation over wide temperature range
Low leakage current
Low peak point current
Guaranteed minimum pulse voltage
MAXIMUM RATINGS
Rating
Value
450mW
Total RMS Power Dissipation (Unstabilized)
Total RMS Power Dissipation (Stabilized)
RMS Emitter Current
600mW
70mA
Peak Emitter Current (TJ = 150°C)
Emitter Reverse Voltage (TJ = 150°C)
Operating Temperature Range
2 A
60 V
-65° to +140°C
-65° to +175°C
-65° to +175°C
Operating Temperature Range (Stabilized)
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Maximum
Minimum
Valley
Intrinsic
standoff
ratio (1)
Modulated
interbase
current
Interbase
Emitter
saturation
voltage
Peak
point
current
Emitter reverse
current
resistance (2)
point
current
Base one
peak
TJ =
150°C
pulse
RB2
100Ω
=
VB2E
=
60V
Part
number
IR = 50mA
VBB = 10V
IE = 50mA
VBB = 10V
VB2E
=30V
voltage (3)
VBB = 3V
VBB = 25V
VB2E
=
VRR = 10V
VBB = 20V
10V
RBBO
IB2(MOI)
mA
VE(SAT)
Volts
IEB2O
µA
IEB2O
IEB2O
µA
IP
IV
VOB1
ŋ
kΩ
µA
µA
mA
Volts
Min
Max
.62
.62
.62
.62
.62
.62
.62
.68
.68
.68
.68
.68
.68
Min
4.7
4.7
4.7
6.2
6.2
6.2
6.2
4.7
4.7
4.7
6.2
6.2
6.2
Max
6.8
6.8
6.8
9.1
9.1
9.1
9.1
6.8
6.8
6.8
9.1
9.1
9.1
Min
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
Max
22
22
22
22
22
22
22
22
22
22
22
22
22
2N489
.51
.51
.51
.51
.51
.51
.51
.56
.56
.56
.56
.56
.56
5
4
2
2
2
2
2
2
2
2
2
2
2
2
2
20
20
20
20
20
20
20
20
20
20
20
20
20
-
12
12
6
8
8
8
8
8
8
8
8
8
8
8
8
8
-
2N489A
2N489B
2N490
-
3
3
-
4
0.2
5
-
12
12
6
2N490A
2N490B
2N490C
2N491
4
-
0.2
0.02
-
3
3
3
-
4
4
2
5
12
12
6
2N491A
2N491B
2N492
4.3
4.3
5
-
3
3
-
0.2
-
12
12
6
2N492A
2N492B
4.3
4.3
-
3
3
0.2
Rev. 20180710
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Maximum
Minimum
Valley
Intrinsic
standoff
ratio (1)
Modulated
interbase
current
Interbase
Emitter
saturation
voltage
Peak
point
current
Emitter reverse
current
resistance (2)
point
current
Base one
peak
TJ =
150°C
pulse
RB2
100Ω
=
VB2E
=
60V
Part
number
IR = 50mA
VBB = 10V
IE = 50mA
VBB = 10V
voltage (3)
VB2E
=30V
VBB = 3V
VBB = 25V
VB2E
=
VRR = 10V
VBB = 20V
10V
RBBO
IB2(MOI)
mA
VE(SAT)
Volts
IEB2O
µA
IEB2O
IEB2O
µA
IP
IV
VOB1
ŋ
kΩ
µA
µA
mA
Volts
Min
Max
.68
.75
.75
.75
.75
.75
.75
.75
Min
6.2
4.7
4.7
4.7
6.2
6.2
6.2
6.2
Max
9.1
6.8
6.8
6.8
9.1
9.1
9.1
9.1
Min
6.8
6.8
6.8
6.8
6.8
6.8
6.8
6.8
Max
22
22
22
22
22
22
22
22
2N492C
2N493
.56
.62
.62
.62
.62
.62
.62
.62
4.3
5
2
2
2
2
2
2
2
2
20
20
20
20
20
20
20
20
0.02
2
12
12
6
8
8
8
8
8
8
8
8
3
-
-
-
2N493A
2N493B
2N494
4.6
4.6
5
3
3
-
0.2
-
12
12
6
2N494A
2N494B
2N494C
4.6
4.6
4.6
-
3
3
3
0.2
0.02
2
Note 1: The intrinsic standoff ratio, ƞ, is essentially constant with temperature and interbase voltage. ƞ is defined by the equation: VP = ƞ VBB + 200/TJ, where VP = peak point emitter voltage,
VBB = Interbase voltage, TJ = Junction temperature (Degrees Kelvin).
Note 2: The interbase resistance is nearly ohmic and increases with temperature in a well defined manner. The temperature coefficient at 25°C is approximately 0.8%/°C.
Note 3: The base-one peak pulse voltage is measured in the circuit below. This specification on the A and B versions is used to ensure a minimum pulse amplitude for applications in SCR firing
circuits and other types of pulse circuits.
Rev. 20180710
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
TO-5
Marking
Polarity
Alpha-numeric
See below
Rev. 20180710
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20180710
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20180710
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20180710
2N489(A,B)-2N494(A,B)
SILICON UNIJUNCTION TRANSISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20180710
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