2N6348 [DIGITRON]
Triac; Max Peak Repetitive Reverse Voltage: 8; Max TMS Bridge Input Voltage: 100; Max DC Reverse Voltage: 2;
| 型号： | 2N6348 |
| 厂家： | 
Digitron Semiconductors |
| 描述： | Triac; Max Peak Repetitive Reverse Voltage: 8; Max TMS Bridge Input Voltage: 100; Max DC Reverse Voltage: 2 局域网 栅 三端双向交流开关 栅极 |
| 文件： | 总5页 (文件大小：1460K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N6342-2N6349
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive off-state voltage(1)
(Gate open, TJ = -40 to 110°C, ½ sine wave 50 to 60Hz)
2N6342, 2N6346
200
400
600
800
VDRM
Volts
2N6343, 2N6347
2N6344, 2N6348
2N6345, 2N6349
RMS on-state current
Full cycle sine wave 50 to 60Hz
TC = 80°C
TC = 90°C
IT(RMS)
8
4
Amps
Amps
Peak non-repetitive surge current
(One full cycle, 60Hz, TC = 80°C)
ITSM
100
40
Preceded and followed by rated current
Circuit fusing (t = 8.3ms)
I2t
A2s
Peak gate power
PGM
Watts
(TC = 80°C, pulse width = 2µs)
20
Average gate power
PG(AV)
Watts
(TC = 80°C, t = 8.3ms)
0.5
2
Peak gate current
IGM
VGM
TJ
Amps
Volts
°C
Peak gate voltage
10
Operating temperature range
-40 to 125
-40 to 150
Storage temperature range
Tstg
°C
Note 1: VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal resistance, junction to case
RӨJC
2.2
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C and either polarity of MT2 to MT1 voltage, unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Peak blocking current
(VD = rated VDRM, gate open)
TJ = 25°C
IDRM
-
-
-
-
10
2
µA
TJ = 100°C
mA
Peak on-state voltage
VTM
Volts
≤ 2%)
(ITM = 11A peak, pulse width = 1 to 2ms, duty cycle
-
1.3
1.55
Rev. 20131205
2N6342-2N6349
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
Gate trigger current (continuous dc)
(VD = 12Vdc, RL = 100ohms)
(Minimum gate pulse width = 2µs)
MT2+, G+ All types
-
-
-
-
-
-
12
12
20
35
-
50
75
MT2+, G- 2N6346-2N6349
IGT
mA
MT2-, G- All types
50
MT2-, G+ 2N6346-2N6349
75
MT2+, G+:MT2-, G-, TC = -40°C All types
MT2+, G-:MT2-, G+, TC = -40°C, 2N6346-2N6349
100
125
-
Gate trigger voltage (continuous dc)
(VD = 12Vdc, RL = 100ohms)
VGT
Volts
(Minimum gate pulse width = 2µs)
MT2+, G+ All types
MT2+, G- 2N6346-2N6349
-
0.9
0.9
1.1
1.4
-
2.0
2.5
2.0
2.5
2.5
3.0
-
MT2-, G- All types
-
MT2-, G+ 2N6346-2N6349
-
-
MT2+, G+:MT2-, G-, TC = -40°C All types
MT2+, G-:MT2-, G+, TC = -40°C, 2N6346-2N6349
(VD = rated VDRM, RL = 10kohms, TJ = 100°C)
MT2+, G+; MT2-, G- All types
-
-
-
0.2
0.2
-
MT2+, G-;MT2-, G-, 2N6346-2N6349
-
-
Holding current
(VD = 12Vdc, gate open)
(IT = 200mA)
IH
mA
µs
TC = 25°C
TC = -40°C
-
-
6
-
40
75
Turn-on time
tgt
(VD = rated VDRM, ITM = 11A, IGT = 120mA, rise time = 0.1µs,
pulse width = 2µs)
-
-
1.5
5
2
-
Critical rate of rise of commutation voltage
(VD = rated VDRM, ITM = 11A, commutating di/dt = 4.0A/ms,
gate unenergized, TC = 80°C)
dv/dt
V/µs
Rev. 20131205
2N6342-2N6349
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
MECHANICAL CHARACTERISTICS
Case
TO-220AB
Marking
Pin out
Alpha-numeric
See below
Rev. 20131205
2N6342-2N6349
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20131205
2N6342-2N6349
SILICON BIDIRECTIONAL THYRISTORS
High-reliability discrete products
and engineering services since 1977
Rev. 20131205
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