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2N6404

更新时间：2024-09-18 18:29:56
品牌：DIGITRON
描述：Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 2; Capacitance: 40; Package: TO-220AB

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2N6404 概述

Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Input Voltage: 10; Max DC Reverse Voltage: 2; Capacitance: 40; Package: TO-220AB 可控硅整流器

2N6404 规格参数

是否Rohs认证： 不符合生命周期：Active
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：NBase Number Matches：1

2N6404 数据手册

通过下载2N6404数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
FEATURES  
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak repetitive off-state voltage (1)  
(TJ = -40 to 125°C, sine wave 50 to 60Hz, gate open)  
2N6400  
2N6401  
2N6402  
2N6403  
2N6404  
2N6405  
50  
VDRM  
VRRM  
100  
200  
400  
600  
800  
Volts  
On-state RMS current  
IT(RMS)  
Amps  
Amps  
(180° conduction angles), TC = 100°C)  
16  
10  
Average on-state current  
IT(AV)  
(180° conduction angles, TC = 100°C)  
Peak non-repetitive surge current  
ITSM  
I2t  
Amps  
A2s  
(1/2 cycle, sine wave 60Hz, TJ = 90°C)  
160  
145  
Circuit fusing (t = 8.3ms)  
Forward peak gate power  
PGM  
Watts  
≤ 1.0µs, T  
(pulse width  
C = 100°C)  
20  
Forward average gate power  
PG(AV)  
Watts  
Amps  
(t = 8.3ms, TC = 100°C)  
0.5  
Forward peak gate current  
IGM  
≤ 1.0µs, T  
(Pulse width  
C = 100°C)  
2.0  
Operating junction temperature range  
TJ  
-40 to 125  
°C  
°C  
Storage temperature range  
Tstg  
-40 to 150  
1.  
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage, however, positive gate voltage shall not be applied concurrent with negative potential on  
the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
RӨJC  
Max  
1.5  
Unit  
°C/W  
°C  
Thermal resistance, junction to case  
Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds  
TL  
260  
ELECTRICAL CHARACTERISTICS (TC = 25°C)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Peak repetitive forward or reverse blocking current  
(VAK = rated VDRM or VRRM, gate open)  
TJ = 25°C  
-
-
-
-
10  
µA  
IDRM, IRRM  
TJ = 125°C  
2.0  
mA  
ON CHARACTERISTICS  
Peak forward on-state voltage  
VTM  
Volts  
(ITM = 32A peak, pulse width ≤ 1ms, duty cycle ≤ 2%)  
-
-
1.7  
Rev. 20120924  
2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
ELECTRICAL CHARACTERISTICS (TC = 25°C)  
ON CHARACTERISTICS  
Gate trigger current (continuous dc)  
(VD = 12Vdc, RL = 100ohms)  
TC = 25°C  
TC = -40°C  
IGT  
-
-
9.0  
-
30  
60  
mA  
Gate trigger voltage (continuous dc)  
(VD = 12Vdc, RL = 100ohms)  
TC = 25°C  
TC = -40°C  
VGT  
VGD  
IH  
-
-
0.7  
-
1.5  
2.5  
Volts  
Volts  
mA  
µs  
Gate non-trigger voltage  
(VD = 12Vdc, RL = 100ohms)  
TC = 125°C  
0.2  
-
-
Holding current  
(VD = 12Vdc, initiating current = 200mA, gate open)  
TC = 25°C  
-
-
18  
-
40  
60  
TC = -40°C  
Turn-on time  
tgt  
(ITM = 16A, IGT = 40mAdc, VD = rated VDRM  
)
-
1.0  
-
Turn-off time  
(ITM = 16A, IR = 16A, VD = rated VDRM  
)
TC = 25°C  
TJ= 125°C  
tq  
-
-
15  
35  
-
-
µs  
DYNAMIC CHARACTERISTICS  
Critical rate of rise of off state voltage  
(VD = rated VDRM, exponential waveform)  
dv/dt  
V/µs  
TJ = 125°C  
-
50  
-
Rev. 20120924  
2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
MECHANICAL CHARACTERISTICS  
Case:  
TO-220AB  
Marking:  
Pin out:  
Body painted, alpha-numeric  
See below  
Rev. 20120924  
2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20120924  
2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20120924  
2N6400-2N6405  
SILICON CONTROLLED RECTIFIERS  
High-reliability discrete products  
and engineering services since 1977  
Rev. 20120924  

2N6404 相关器件

型号 制造商 描述 价格 文档
2N6404-16 MOTOROLA Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220, 2 PIN 获取价格
2N6404-A MOTOROLA 16A, 600V, SCR, TO-220AB 获取价格
2N6404-A16A MOTOROLA 16A, 600V, SCR, TO-220AB, TO-220, 3 PIN 获取价格
2N6404-AF MOTOROLA 16A, 600V, SCR, TO-220AB 获取价格
2N6404-AJ MOTOROLA Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB 获取价格
2N6404-AN MOTOROLA 16A, 600V, SCR, TO-220AB 获取价格
2N6404-AS MOTOROLA 16A, 600V, SCR, TO-220AB 获取价格
2N6404-AU MOTOROLA 16A, 600V, SCR, TO-220AB 获取价格
2N6404-BA MOTOROLA Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB 获取价格
2N6404-BD MOTOROLA Silicon Controlled Rectifier, 16A I(T)RMS, 600V V(DRM), 600V V(RRM), 1 Element, TO-220AB 获取价格

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